TDA1514A (Philips Semiconductors) - 50 W high performance hi-fi amplifier (TDA1514A.pdf)

Philips Semiconductors

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INTEGRATED CIRCUITS DATA SHEET TDA1514A 50 W high performance hi-fi amplifier Product speciﬁcation File under Integrated Circuits, IC01 May 1992 Philips Semiconductors Product speciﬁcation 50 W high performance hi-ﬁ ampliﬁer GENERAL DESCRIPTION TDA1514A The TDA1514A integrated circuit is a hi-fi power amplifier for use as a building block in radio, tv and other audio applications. The high performance of the IC meets the requirements of digital sources (e.g. Compact Disc equipment). The circuit is totally protected, the two output transistors both having thermal and SOAR protection (see Fig.3). The circuit also has a mute function that can be arranged for a period after power-on with a delay time fixed by external components. The device is intended for symmetrical power supplies but an asymmetrical supply may also be used. Features • High output power • Low harmonic distortion • Low intermodulation distortion • Low offset voltage • Good ripple rejection • Mute/stand-by facilities • Thermal protection • Protected against electrostatic discharge • No switch-on or switch-off clicks • Very low thermal resistance • Safe Operating Area (SOAR) protection. QUICK REFERENCE DATA PARAMETER Supply voltage range (pin 6 to pin 4) Total quiescent current Output power VP = ± 27.5 V THD = −60 dB; VP = ± 27.5 V; RL = 8 Ω VP = ± 23 V; RL = 4 Ω Closed loop voltage gain Input resistance Signal plus noise-to-noise ratio Supply voltage ripple rejection PACKAGE OUTLINE 9-lead SIL, plastic power (SOT131R); SOT131-2; 1996 July 19. f = 100 Hz SVRR − 64 − dB determined externally determined externally Po = 50 mW Ri (S+N)/N − − 20 83 − − kΩ dB Gc − 30 − dB Po − 48 − W Po − 40 − W VP Itot ± 10 − − 56 ± 30 − V mA CONDITIONS SYMBOL MIN. TYP. MAX. UNIT May 1992 2 Philips Semiconductors Product speciﬁcation 50 W high performance hi-ﬁ ampliﬁer TDA1514A Fig.1 Block diagram. May 1992 3 Philips Semiconductors Product speciﬁcation 50 W high performance hi-ﬁ ampliﬁer RATINGS Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) PARAMETER Supply voltage (pin 6 to pin 4) Bootstrap voltage (pin 7 to pin 4) Output current (repetitive peak) Operating ambient temperature range Storage temperature range Power dissipation Thermal shut-down protection time Mute voltage (pin 3 to pin 4) THERMAL RESISTANCE From junction to mounting base Rth j-mb tpr Vm − − VP Vbstr Io Tamb Tstg −55 SYMBOL − − − MIN. ± 30 70 8 see Fig.2 + 150 see Fig.2 1 7.25 MAX. TDA1514A UNIT V V A °C hour V 1 K/W Fig.2 Power derating curve. May 1992 4 Philips Semiconductors Product speciﬁcation 50 W high performance hi-ﬁ ampliﬁer The theoretical maximum power dissipation for Po = 40 W with a stabilized power supply is: VP ---------------- = 19 W; where VP = ± 27.5 V; RL = 8 Ω 2 2π R L 2 TDA1514A Considering, for example, a maximum ambient temperature of 50 °C and a maximum junction temperature of 150 °C the total thermal resistance is: 150 – 50 R th j-a = --------------------- = 5.3 K/W 19 Since the thermal resistance of the SOT131A encapsulation is Rth j-mb < 1 K/W, the thermal resistance required of the heatsink is Rth h-a < 4.3 K/W. SAFE OPERATING AREA (SOAR) PROTECTION Fig.3 SOAR protection curve. May 1992 5 Philips Semiconductors Product speciﬁcation 50 W high performance hi-ﬁ ampliﬁer CHARACTERISTICS VP = ± 27.5 V; RL = 8 Ω; f = 1 kHz; Tamb = 25 °C; test circuit as Fig.4; unless otherwise speciﬁed. PARAMETER Supply voltage range (pin 6 to pin 4) Maximum output current (peak value) Operating state Voltage (pins 3 to 4) Total quiescent current Output power RL = ∞ THD = −60 dB THD = −20 dB Output power VP = ± 23 V; THD = −60 dB RL = 8 Ω RL = 4 Ω Total harmonic distortion Intermodulation distortion Po = 32 W Po = 32 W note 1 Power bandwidth (−3 dB); THD = −60 dB B − − − − 1 20 to 25 000 Slew rate Closed loop voltage gain Open loop voltage gain Input impedance Signal-to-noise ratio note 3 note 4 Po = 50 mW Output offset voltage Input bias current Output impedance Supply voltage ripple rejection Quiescent current into pin 2 note 5 note 6 SVRR I2 58 − 64 0.1 − − S/N Vo II |Zo| 80 − − − 83 7 0.1 − − note 2 dV/dt Gc Go |Zi| 14 30 89 − − − − − dim − −86 − Po Po THD − − − 28 48 −90 − − V3-4 Itot Po Po 6 30 37 − − 56 40 51 IOM max 6.4 − − VP ± 10 − CONDITIONS SYMBOL MIN. TYP. TDA1514A MAX. UNIT ± 30 V A 7.25 90 − − V mA W W W W dB −80 dB Hz V/µs dB dB MΩ dB mV µA Ω 200 1.0 0.1 dB µA May 1992 6 Philips Semiconductors Product speciﬁcation 50 W high performance hi-ﬁ ampliﬁer TDA1514A PARAMETER Mute state Voltage on pin 3 Offset voltage Output voltage CONDITIONS SYMBOL MIN. TYP. MAX. UNIT V3-4 Vo Vi(rms) = 1 V f = 1 kHz Vo RR 2 − − − − 30 4.5 200 − − V V µV dB 450 60 Ripple rejection Standby state Voltage on pin 3 Total quiescent current Ripple rejection Supply voltage to obtain standby state Notes to the characteristics note 5 V3-4 Itot notes 5 and 7 RR ± VP 0 − − − 18 60 − 0.9 25 − V mA dB 5.0 7.0 V 1. Measured with two superimposed signals of 50 Hz and 7 kHz with an amplitude relationship of 4 : 1. 2. The closed loop gain is determined by external resistors (Fig.4, R2 and R3) and is variable between 20 and 46 dB. 3. The input impedance in the test circuit (Fig.4) is determined by the bias resistor R1. 4. The noise output voltage is measured in a bandwidth of 20 Hz to 20 kHz with a source resistance of 2 kΩ. 5. f = 100 Hz; RS = 2 kΩ; ripple voltage = 500 mV(eff) on positive and negative supply. 6. The quiescent current into pin 2 has an impact on the mute time. 7. Without bootstrap. May 1992 7 Philips Semiconductors Product speciﬁcation 50 W high performance hi-ﬁ ampliﬁer TDA1514A (1) Mounting base to connected to −VP. (2) When used without a bootstrap these components are disconnected and pin 6 is connected to pin 7 thus decreasing the output power by approximately 4 W. (3) When RL = 4 Ω: R4 = 47 Ω and R5 = 82 Ω. Fig.4 Application and test circuit. May 1992 8 Philips Semiconductors Product speciﬁcation 50 W high performance hi-ﬁ ampliﬁer PACKAGE OUTLINE SIL9P: plastic single in-line power package; 9 leads TDA1514A SOT131-2 non-concave x Dh D Eh view B: mounting base side d A2 B seating plane j E A1 b L c 1 Z e bp w M 0 5 scale DIMENSIONS (mm are the original dimensions) UNIT mm Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT131-2 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION A1 max. 2.0 A2 4.6 4.2 b max. 1.1 bp 0.75 0.60 c 0.48 0.38 D (1) 24.0 23.6 d 20.0 19.6 Dh 10 E (1) 12.2 11.8 e 2.54 Eh 6 j 3.4 3.1 L 17.2 16.5 Q 2.1 1.8 w 0.25 x 0.03 Z (1) 2.00 1.45 10 mm 9 Q ISSUE DATE 92-11-17 95-03-11 May 1992 9 Philips Semiconductors Product speciﬁcation 50 W high performance hi-ﬁ ampliﬁer SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “IC Package Databook” (order code 9398 652 90011). Soldering by dipping or by wave The maximum permissible temperature of the solder is 260 °C; solder at this temperature must not be in contact with the joint for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds. DEFINITIONS Data sheet status Objective speciﬁcation Preliminary speciﬁcation Product speciﬁcation Limiting values TDA1514A The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg max). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. Repairing soldered joints Apply a low voltage soldering iron (less than 24 V) to the lead(s) of the package, below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 °C, contact may be up to 5 seconds. This data sheet contains target or goal speciﬁcations for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains ﬁnal product speciﬁcations. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the speciﬁcation. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. May 1992 10

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