NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

www.DataSheet4U.com SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 – JANUARY 1996 COMPLEMENTARY TYPE – PARTMARKING DETAIL – 7 SXTA92 SID SXTA42 C E B SOT89 SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg VALUE 300 300 6 500 1 -65 to +150 C ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range UNIT V V V mA W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) hFE fT Cobo 25 40 40 50 6 MHz pF MIN. 300 300 6 0.1 0.1 0.5 0.9 TYP. MAX. UNIT V V V µA µA CONDITIONS. IC=100µA, IE=0 IC=1mA, IB=0* IE=100µA, IC=0 VCB=200V, IE=0 VEB=6V, IC=0 IC=20mA, IB=2mA* IC=20mA, IB=2mA* IC=1mA, VCE=10V* IC=10mA, VCE=10V* IC=30mA, VCE=10V* IC=10mA, VCE=20V f=20MHz VCB=20V, f=1MHz V V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% For typical characteristics graphs see FMMTA42 datasheet. 3 - 306