(SXTA42 / SXTA43) NPN Silicon High Voltage Transistors

NPN Silicon High Voltage Transistors SXTA 42 SXTA 43 q High breakdown voltage q Low collector-emitter saturation voltage Type SXTA 42 SXTA 43 Marking 1D 1E Ordering Code (tape and reel) Q68000-A8394 Q68000-A8650 Pin Configuration 1 2 3 B C E Package1) SOT-89 Maximum Ratings www.DataSheet4U.com Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation, TS = 130 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Symbol SXTA 42 VCE0 VCB0 VEB0 IC Ptot Tj Tstg 300 300 Values SXTA 43 200 200 6 500 1 150 Unit V mA W ˚C – 65 … + 150 Rth JA Rth JS ≤ 75 ≤ 20 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 SXTA 42 SXTA 43 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA SXTA 42 SXTA 43 Collector-base breakdown voltage IC = 100 µA SXTA 42 SXTA 43 Emitter-base breakdown voltage IE = 100 µA Collector cutoff current VCB = 200 V, IE = 0 VCB = 160 V, IE = 0 VCB = 200 V, IE = 0, TA = 125 ˚C VCB = 160 V, IE = 0, TA = 125 ˚C Emitter-base cutoff current VEB = 6 V, IC = 0 DC current gain IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 30 mA, VCE = 10 V SXTA 42 SXTA 43 SXTA 42 SXTA 43 IEB0 hFE 25 40 40 40 VCEsat – – VBEsat – – – – 0.5 0.4 0.9 – – – – – – – – V V(BR)CE0 300 200 V(BR)CB0 300 200 V(BR)EB0 ICB0 – – – – – – – – – – 100 100 10 10 100 nA nA µA µA Values typ. max. Unit V – – – – – – – – – – 6 nA – SXTA 42 SXTA 43 Collector-emitter saturation voltage1) IC = 20 mA, IB = 2 mA SXTA 42 SXTA 43 Base-emitter saturation voltage1) IC = 20 mA, IB = 2 mA AC characteristics Transition frequency IC = 10 mA, VCE = 20 V, f = 100 MHz Output capacitance VCB = 20 V, f = 1 MHz SXTA 42 SXTA 43 fT Cobo 50 – – MHz pF – – – – 3 4 1) Pulse test conditions: t ≤ 300 µs, D ≤ 2 %. Semiconductor Group 2 SXTA 42 SXTA 43 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Transition frequency fT = f (IC) VCE = 10 V, f = 100 MHz Permissible pulse load Ptot max/Ptot DC = f (tp) Operating range IC = f (VCE0) TA = 25 ˚C, D = 0 Semiconductor Group 3 SXTA 42 SXTA 43 Collector cutoff current ICB0 = f (TA) VCB = 160 V Collector current IC = f (VBE) VCE = 10 V DC current gain hFE = f (IC) VCE = 10 V Semiconductor Group 4