PNP Silicon Switching Transistor

PNP Silicon Switching Transistor q High current gain: 0.1 mA to 100 mA q Low collector-emitter saturation voltage SXT 3906 Type SXT 3906 Marking 2A Ordering Code (tape and reel) Q68000-A8397 Pin Configuration 1 2 3 B C E Package1) SOT-89 Maximum Ratings www.DataSheet4U.com Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation, TS = 100 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Symbol VCE0 VCB0 VEB0 IC Ptot Tj Tstg Values 40 40 5 200 1 150 – 65 … + 150 Unit V mA W ˚C Rth JA Rth JS ≤ 120 ≤ 50 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 SXT 3906 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA Collector-base breakdown voltage IC = 10 µA Emitter-base breakdown voltage IE = 10 µA Collector-base cutoff current VCB = 30 V Collector-emitter cutoff current VCE = 30 V, VBE = – 3 V DC current gain IC = 100 µA, VCE = 1 V IC = 1 mA, VCE = 1 V IC = 10 mA, VCE = 1 V IC = 50 mA, VCE = 1 V IC = 100 mA, VCE = 1 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA Base-emitter saturation voltage1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA V(BR)CE0 V(BR)CB0 V(BR)EB0 ICB0 ICEV hFE 60 80 100 60 30 VCEsat – – VBEsat 0.65 – – – 0.85 0.95 – – 0.25 0.4 – – – – – – – 300 – – V 40 40 5 – – – – – – – – – – 50 50 – nA V Values typ. max. Unit 1) Pulse test conditions: t ≤ 300 µs, D ≤ 2 %. Semiconductor Group 2 SXT 3906 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. AC characteristics Transition frequency IC = 10 mA, VCE = 20 V, f = 100 MHz Output capacitance VCB = 5 V, f = 1 MHz Input capacitance VEB = 0.5 V, f = 1 MHz Input impedance ICE = 1 mA, VCE = 10 V, f = 1 kHz Voltage feedback ratio IC = 1 mA, VCE = 10 V, f = 1 kHz Small-signal current gain IC = 1 mA, VCE = 10 V, f = 1 kHz Output admittance IC = 1 mA, VCE = 10 V, f = 1 kHz Noise figure IC = 0.1 mA, VCE = 5 V, f = 10 Hz to 15 kHz RS = 1 kΩ Switching times VCC = 3 V, VBE = 0.5 V, IC = 10 mA, IB1 = 1 mA VCC = 3 V, IC = 10 mA, IB1 = 1 mA fT Cobo Cibo hie hre hfe hoe NF 250 – – 2 0.1 100 3 – – – – – – – – – – 4.5 10 12 10 400 60 4 kΩ 10– 4 – µS Values typ. max. Unit MHz pF dB td tr ts tf – – – – – – – – 35 35 225 75 ns ns ns ns Semiconductor Group 3 SXT 3906 Test circuits Delay and rise time Storage and fall time Semiconductor Group 4 SXT 3906 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Saturation voltage IC = f (VBE sat, VCE sat) Permissible pulse load Ptot max/Ptot DC = f (tp) Open-circuit reverse voltage transfer ratio h12e = f (IC) Semiconductor Group 5 SXT 3906 Small-signal current gain hfe = f (IC) VCE = 10 V, f = 1 MHz Output admittance h22e = f (IC) VCE = 10 V, f = 1 MHz Delay time td = f (IC) Rise time tr = f (IC) Fall time tf = f (IC) Semiconductor Group 6 SXT 3906 DC current gain hFE = f (IC) VCE = 1 V, normalized Semiconductor Group 7