NPN Silicon Switching Transistor

NPN Silicon Switching Transistor q High current gain: 0.1 mA to 500 mA q Low collector-emitter saturation voltage SXT 2222 A Type SXT 2222 A Marking 2P Ordering Code (tape and reel) Q68000-A8330 Pin Configuration 1 2 3 B C E Package1) SOT-89 Maximum Ratings www.DataSheet4U.com Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation, TS = 120 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Symbol VCE0 VCB0 VEB0 IC Ptot Tj Tstg Values 40 75 6 600 1 150 – 65 … + 150 Unit V mA W ˚C Rth JA Rth JS ≤ 90 ≤ 30 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 SXT 2222 A Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA Collector-base breakdown voltage IC = 10 µA Emitter-base breakdown voltage IE = 10 µA Collector-base cutoff current VCB = 60 V, IE = 0 VCB = 60 V, IE = 0, TA = 125 ˚C Collector cutoff current VCE = 30 V, VBE = 0.5 V Emitter-base cutoff current VEB = 3 V, IC = 0 Base cutoff current VCE = 30 V, VBE = – 3 V DC current gain IC = 100 µA, VCE = 10 V IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 10 mA, VCE = 10 V, TA = – 55 ˚C IC = 150 mA, VCE = 10 V IC = 150 mA, VCE = 1 V IC = 500 mA, VCE = 10 V Collector-emitter saturation voltage1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA Base-emitter saturation voltage1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA V(BR)CE0 V(BR)CB0 V(BR)EB0 ICB0 – – ICEX IEB0 IBL hFE 35 50 75 35 100 50 40 VCEsat – – VBEsat 0.6 – – – 1.2 2.0 – – 0.3 1.0 – – – – – – – – – – – 300 – – V – – – – – – – – 10 10 10 10 20 – nA µA Values typ. max. Unit 40 75 6 – – – – – – V nA 1) Pulse test conditions: t ≤ 300 µs, D ≤ 2 %. Semiconductor Group 2 SXT 2222 A Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. AC characteristics Transition frequency IC = 50 mA, VCE = 20 V, f = 100 MHz Output capacitance VCB = 10 V, f = 1 MHz Input capacitance VEB = 2 V, f = 1 MHz Input impedance IC = 1 mA, VCE = 10 V, f = 1 kHz IC = 10 mA, VCE = 10 V, f = 1 kHz Voltage feedback ratio IC = 1 mA, VCE = 10 V, f = 1 kHz IC = 10 mA, VCE = 10 V, f = 1 kHz Small-signal current gain IC = 1 mA, VCE = 10 V, f = 1 kHz IC = 10 mA, VCE = 10 V, f = 1 kHz Output admittance IC = 1 mA, VCE = 10 V, f = 1 kHz IC = 10 mA, VCE = 10 V, f = 1 kHz Collector-base time constant IE = 20 mA, VCB = 20 V, f = 31.8 MHz Noise figure IC = 100 µA, VCE = 10 V, RS = 1 kΩ, f = 1 kHz Switching times VCC = 30 V, VBE = 0.5 V, IC = 150 mA, IB1 = 15 mA VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA fT Cobo Cibo hie 2 0.25 hre – – hfe 50 75 hoe 5 25 rb'Cc NF – – – – – – 35 200 150 4 ps dB – – 300 375 µS Values typ. max. Unit 300 – – – – – – 8 25 MHz pF kΩ – – – – 8 1.25 10– 4 8 4 – td tr ts tf – – – – – – – – 10 25 225 60 ns ns ns ns Semiconductor Group 3 SXT 2222 A Test circuits Delay and rise time Storage and fall time Semiconductor Group 4 SXT 2222 A Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Collector-base capacitance Ccb = f (VCB) f = 1 MHz Permissible pulse load Ptot max / Ptot DC = f (tp) Transition frequency fT = f (IC) VCE = 20 V Semiconductor Group 5 SXT 2222 A Saturation voltage IC = f (VBE sat, VCE sat) hFE = 10 DC current gain hFE = f (IC) VCE = 10 V Delay time td = f (IC) Rise time tr = f (IC) Storage time ts = f (IC) Fall time tf = f (IC) Semiconductor Group 6