Description
Product Description Sirenza Microdevices’ SXA-3318B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in a low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 400-2500 MHz cellular, ISM, WLL, PCS, W-CDMA applications. Its high linearity makes it an ideal choice for multi-carrier as well as digital applications. The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants. SXA-3318B SXA-3318BZ Pb RoHS Compliant & Green Package 400-2500 MHz Balanced ½ W Medium Power GaAs HBT Amplifier with Active Bias Product Features • Now available in Lead Free, RoHS Compliant, & Green Packaging • On-chip Active Bias Control • Balanced for excellent input/output VSWR and minimized reflections • High OIP3 : +47 dBm typ. SXA-3318B 5V • High P1dB : +28 dBm typ. • Patented High Reliability GaAs HBT Technology • Surface-Mountable Power Plastic Package RFin 1 2 3 4 8 7 6 5 Applications • W-CDMA, PCS, Cellular Systems RFout www.DataSheet4U.com • High Linearity IF Amplifiers • Multi-Carrier Applications Symbol Parameters: Test C onditions: Z0 = 50 Ohms, Ta = 25°C , Measured in Evaluation C ircuit Output Power at 1dB C ompressi on f = 850 MHz f = 1960 MHz f = 2140 MHz f = 850 MHz f = 1960 MHz f = 2140 MHz f = 850 MHz f = 1960 MHz f = 2140 MHz f = 850 MHz f = 1960 MHz f = 2140 MHz f = 880 MHz f = 1960 MHz f = 2140 MHz f = 850 MHz f = 1960 MHz f = 2140 MHz V cc = 5 V U nits Min. Typ. 27.5 28.0 28.0 17.5 12.8 12.0 1.3 1.2 1.2 Max. P 1dB dB m 27.0 16.0 dB 10.5 44 dB m 44 dB c 19.0 13.5 1.7 S 21 Small si gnal gai n VSWRin Input VSWR OIP3 Output Thi rd Order Intercept Poi nt (Pout/T ne = +11 dBm, T ne spaci ng = 1 MHz) o o Adjacent C hannel Power: IS-95 at POUT = 19 dBm IS-95 at POUT = 19 dBm W-C D MA at POUT = 18 dBm 47 47 47 -55 -55 -50 4.5 5.1 5.1 6.0 AC P NF ID Rth, j-l Noi se Fi gure D evi ce C urrent (120 mA per ampli fi er) Thermal Resi stance (juncti on - lead) per ampli fi er *Note: 2 ampli fi ers per packaged part dB mA ° C /W 180 240 70 280 The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights reserved. 303 South Technology Ct., Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-103164 Rev B 1 Note: Tested in Balanced Configuration shown in Application Circuit, tuned for Output IP3 P1dB vs. Frequency 30 29 28 27 25C 26 25 0 .8 0.8 5 GHz dB 850 MHz Application Circuit Data, VCC= 5V, ID= 240mA Gain vs. Frequency 25 22 19 16 -4 0C 85C 10 13 2 5C -40 C 8 5C 0 .95 0 .8 0 .8 5 GHz dBm 0 .9 0 .9 0.9 5 Input/Output Return Loss, Isolation vs. Frequency, T=25°C 0 -5 -1 0 -1 5 -2 0 -2 5 -3 0 -3 5 -4 0 0 .8 0 .8 5 GHz dBm dB Third Order Intercept vs. Frequency (POUT per tone = 11dBm) 55 S11 S22 S12 50 45 40 35 30 25C -4 0C 85C 0 .9 0 .9 5 0 .8 0 .8 5 GHz 0 .9 0.9 5 Third Order Intercept vs. Tone Power Frequency = 880 MHz 55 25C 50 45 dBc 880 MHz Adjacent Channel Power vs. Channel Output Power -4 0 -4 5 -5 0 -5 5 -6 0 -6 5 -7 0 -7 5 25 C -4 0C 85 C 15 16 17 18 19 20 21 22 -40C 85C dBm 40 35 30 5 10 15 POUT per tone (dBm) -8 0 20 25 Channel Output Power (dBm) IS-95, 9 Channels Forward 303 South Technology Ct., Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-103164 Rev B 2 1960 MHz Application Circuit Data, VCC= 5V, ID= 240mA P1dB vs. Frequency 30 29 28 27 25 C 26 25 1.9 3 -4 0C 85 C 1 .9 4 1 .9 5 1.96 GHz dB Note: Tested in Balanced Configuration shown in Application Circuit, tuned for Output IP3 Gain vs. Frequency 20 17 14 11 8 5 1 .9 3 25 C -4 0C 85 C 1 .9 9 dBm 1.97 1.98 1.94 1.9 5 1.96 GHz 1 .9 7 1 .98 1.9 9 Input/Output Return Loss, Isolation vs. Frequency, T=25°C 0 -5 -1 0 -1 5 -2 0 -2 5 -3 0 -3 5 -4 0 1 .9 3 1 .9 4 1 .9 5 1 .9 6 GHz dBm dB Third Order Intercept vs. Frequency (POUT per tone = 11dBm) 55 S11 S22 S12 50 45 40 35 30 1.93 25 C -4 0C 85 C 1 .9 7 1 .9 8 1 .9 9 1.94 1.95 1.96 GHz 1 .9 7 1.98 1 .99 Third Order Intercept vs. Tone Power Frequency = 1.96 GHz 55 50 45 dBc 1960 MHz Adjacent Channel Power vs. Channel Output Power -40 -45 -50 -55 -60 -65 25C -40C 85C 15 16 17 18 19 20 21 22 dBm 40 25C 35 30 5 10 15 POUT per tone (dBm) -40C 85C 20 25 -70 -75 -80 Channel Output Power (dBm) IS-95, 9 Channels Forward 303 South Technology Ct., Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-103164 Rev B 3 2140 MHz Application Circuit Data, VCC= 5V, ID= 240mA Note: Tested in Balanced Configuration shown in Application Circuit, tuned for Output IP3 P1dB vs. Frequency 30 29 28 dB Gain vs. Frequency 20 17 14 11 2 5C -40 C 8 5C 25C 8 5 2.11 -40C 85C 2.1 7 2.12 2.13 2.14 GHz dBm 27 26 25 2 .11 2.1 2 2 .13 2 .1 4 GHz 2.15 2 .16 2.1 5 2.16 2 .17 Input/Output Return Loss, Isolation vs. Frequency, T=25°C 0 -5 -10 -15 -20 -25 -30 -35 -40 2.11 2.12 2.13 2.14 GHz dBm dB Third Order Intercept vs. Frequency (POUT per tone = 11dBm) 55 S 11 S 22 S 12 50 45 40 25C 35 30 2.11 -40C 85C 2.15 2.16 2.17 2.12 2.13 2.14 GHz 2.15 2.16 2.17 Third Order Intercept vs. Tone Power Frequency = 2.14 GHz 55 50 45 dBc 2140 MHz Adjacent Channel Power vs. Channel Output Power -40 25C -40C 85C -45 -50 -55 25C -60 -65 -40C 85C dBm 40 35 30 5 10 15 POUT per tone (dBm) 20 25 15 16 17 18 19 20 21 22 Channel Output Power (dBm) W-CDMA, 64 DPCH + Overhead 303 South Technology Ct., Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-103164 Rev B 4 Application Schematic (850 MHz) VCC C6 C5 C4 C3 RF IN X1 C1 Z=50Ω, EL1 L1 Z=50Ω, EL2 SXA-3318B 1 2,3 4 8 6,7 5 L2 Z=50Ω, EL3 C3 C7 R1 x2 C2 R1 x2 C1 Z=50Ω, EL1 L1 Z=50Ω, EL2 Z=50Ω, EL3 C2 L2 C7 C3 X1 RF OUT C6 C5 C4 C3 VCC Ref. Des. C 1, C 3 C2 C4 C5 C6 C7 L1 Vendor Series Rohm MCH18 Rohm MCH18 Rohm MCH18 Rohm TAJB104KLRH Rohm TAJB106K020R Rohm MCH18 Toko LL1608-FS 850 MHz 47pF, 5% 3.9pF, ±0.25pF 1000pF, 5% 0.1uF, 10% 10uF, 10% 3.3pF, ±0.25pF 1.2nH, ±0.3nH Ref. Des. L2 E L1 E L2 E L3 X1 R1 Vendor Series Toko LL1608-FS 50 Ohms 50 Ohms 50 Ohms Sirenza Coupler Rohm MCR100J 850 MHz 33nH, 5% 9.9° 4.4° 11° AH03L 100 Ohm, 5% Evaluation Board Layout (850 MHz) SIRENZA MICRODEVICES X1 Vcc C6 + R1 x2 X1 L2 C1 C2 L1 C5 C4 C3 C7 C3 C4 C5 R1 x2 Balanced SOIC-8 Eval Board ECB-103109-A Vcc + C6 303 South Technology Ct., Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-103164 Rev B 5 Application Schematic (1960 MHz, 2140 MHz) VCC C5 C4 C3 RF IN X1 C1 Z=50Ω, EL1 SXA-3318B C2 1 2,3 4 8 6,7 5 L1 Z=50Ω, EL2 C3 C7 R1 x2 R1 x2 C1 Z=50Ω, EL1 Z=50Ω, EL2 C2 L1 C7 C3 X1 RF OUT C5 C4 C3 VCC Ref. Des. C 1, C 3 C2 C4 C5 C7 Vendor Series Rohm MCH18 Rohm MCH18 Rohm MCH18 Rohm TAJB104KLRH Rohm MCH18 1960 MHz 22pF, 5% 1.2pF, ±0.25pF 1000pF, 5% 0.1uF, 10% 1.0pF, ±0.25pF 2140 MHz 22pF, 5% 1.2pF, ±0.25pF 1000pF, 5% 0.1uF, 10% 1.0pF, ±0.25pF Ref. Des. L1 E L1 E L2 X1 R1 Vendor Series Toko LL1608-FS 50 Ohms 50 Ohms Sirenza Coupler Rohm MCR100J 1960 MHz 18nH, 5% 10.1° 20.9° AM03M 100 Ohm, 5% 2140 MHz 18nH, 5% 11° 22.8° AM03M 100 Ohm, 5% Evaluation Board Layout (1960 MHz, 2140 MHz) Vcc X1 X1 L1 C1 R1 x2 C5 C4 C3 C7 C2 C3 C4 C5 R1 x2 ECB-102363 Rev. A Balanced SOIC-8 Eval Board Vcc Sirenza Microdevices 303 South Technology Ct., Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-103164 Rev B 6 Pin # 1, 4 2, 3, 6, 7 Function RF In GND Description RF input pin. This pin requires the use of an external DC blocking capacitor. Connection to ground. Use via holes to reduce lead inductance. Place vias as close to ground leads as possible. Device Schematic 1 2 3 4 Input Match Active Bias 8 7 6 5, 8 RF Out/Vcc RF output and bias pin. Bias should be supplied to this pin through an external RF choke. Because DC biasing is present on this pin, a DC blocking capacitor should be used in most applications (see application schematic). The supply side of the bias network should be well bypassed. An output matching network is necessary for optimum performance. GND Exposed area on the bottom side of the package needs to be soldered to the ground plane of the board for thermal and RF performance. Several vias should be located under the EPAD as shown in the recommended land pattern (page 8). Active Bias Input Match 5 EPAD Device Current vs. Source Voltage 350 Absolute Maximum Ratings Parameter Absolute Limit 240 mA 6.0 V 1500 mW 100 mW +160 ºC -40 to +85 ºC +150 ºC Max. Supply Current (ID) per amplifier (2 amplifiers per packaged part) Max. Device Voltage (VCC) Max. Power Dissipation per amplifier (2 amplifiers per packaged part) Max. RF Input Power per amplifier (2 amplifiers per packaged part) Max. Junction Temp. (TJ) Operating Lead Temp. (TL) Device Current (mA) 300 250 200 150 100 50 0 0 1 -40 C 25 C 85 C 2 3 4 5 6 Max. Storage Temp.

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SXA-3318BZ

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