N-Channel Logic Level E nhancement Mode Field Effect Transistor

www.DataSheet4U.com S T U/D3525NL S amHop Microelectronics C orp. Arp,20 2005 ver1.1 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 25V F E AT UR E S S uper high dense cell design for low R DS (ON ). ID 35A R DS (ON) ( m W ) T yp 12.5 @ V G S = 10V 25 @ V G S = 4.5V R ugged and reliable. TO-252 and TO-251 P ackage. D D G S G D S G S TU S E R IE S TO-252AA(D-P AK) S TD S E R IE S TO-251(l-P AK) S ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage R ating Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous b -P ulsed a S ymbol Vspike d V DS V GS @ T C =25 C ID IDM IS PD T J , T S TG Limit 30 25 20 35 75 20 50 -55 to 175 Unit V V V A A A W C Drain-S ource Diode Forward C urrent Maximum P ower Dissipation @ Tc=25 C Operating and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient 1 R JC R JA 3 50 C /W C /W S T U/D3525NL E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c Condition V GS = 0V, ID = 250uA V DS = 20V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID =10A V GS =4.5V, ID= 5A V DS = 10V, V GS = 10V V DS = 10V, ID = 10A Min Typ C Max Unit 25 1 V uA 100 nA 1 1.8 12.5 25 25 11 825 255 150 3 45 V m ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 18 m ohm A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance V DS =15V, V GS = 0V f =1.0MH Z S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Q gs Q gd 2 V DD = 15V ID = 1A V GS = 10V R GE N = 6 ohm V DS =15V, ID =10A,V GS =10V V DS =15V, ID =10A,V GS =4.5V V DS =15V, ID =10A V GS =10V 7.5 20.3 16.7 15.2 15.9 8.3 3.3 4.6 ns ns ns ns nC nC nC nC S T U/D3525NL E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter S ymbol Condition Min Typ Max Unit 0.97 1.3 V DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a Diode Forward Voltage V GS = 0V, Is = 20A VSD Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. d.Guaranteed when external R g=6 ohm and tf < tf max 20 V G S =4.5V V G S =10V V G S =8V V G S =5V 20 16 ID , Drain C urrent(A) V G S =4V 12 I D , Drain C urrent (A) 15 10 T j=125 C 5 25 C 0 0 0.9 1.8 2.7 -55 C 8 4 0 V G S =3V 0 0.5 1 1.5 2 2.5 3 3.6 4.5 5.4 V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 1500 1.8 F igure 2. Trans fer C haracteris tics R DS (ON) , On-R es is tance Normalized 1250 1.6 1.4 1.2 1.0 0.8 0.6 -55 V G S =10V I D =10A C , C apacitance (pF ) 1000 750 500 C is s C os s 250 0 C rs s 0 5 10 15 20 25 30 -25 0 25 50 75 100 125 T j( C ) V DS , Drain-to S ource Voltage (V ) T j, J unction T emperature ( C ) F igure 3. C apacitance F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 3 S T U/D3525NL B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 V DS =V G S I D =250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ID=250uA 6 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 18 V DS =10V F igure 6. B reakdown V oltage V ariation with T emperature 20.0 gF S , T rans conductance (S ) Is , S ource-drain current (A) 15 12 9 6 3 0 0 5 10 15 20 10.0 1.0 0.2 0.4 0.6 0.8 1.0 1.2 I DS , Drain-S ource C urrent (A) V S D , B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent 10 I D , Drain C urrent (A) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 400 V G S , G ate to S ource V oltage (V ) 8 6 4 2 0 0 V DS =15V I D =10A 100 R D ON S( )L im it 10 10 1s DC ms 0m 10 1 s 1 0.1 V G S =10V S ingle P ulse T A =25 C 0.1 1 10 25 60 3 6 9 12 15 18 21 24 Qg, T otal G ate C harge (nC ) V DS , Drain-S ource V oltage (V ) F igure 9. G ate C harge 4 F igure 10. Maximum S afe O perating Area S T U/D3525NL V DD ton V IN D VG S R GE N G 90% toff tr 90% RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D 6 S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit F igure 12. S witching Waveforms 10 Normalized Transient Thermal Resistance 1 0.5 0.2 0.1 P DM t1 on 0.1 0.05 0.02 0.01 1. 2. 3. 4. t2 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.01 0.00001 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 5 S T U/D3525NL 6 S T U/D3525NL 5 95 7 84 9 6.00 35 05 85 0.94 4 3 0 9 7 30 3 9 36 3 41 3 3 5 1 4 L2 2.29 9.70 1.425 0.650 0.600 BSC 1 1.625 0.850 REF. 0.090 82 56 6 0.024 BSC 398 0.064 33 REF. 7 S T U/D3525NL TO-251 Tube TO251 Tube/TO-252 Tape and Reel Data " A" TO-252 Carrier Tape UNIT:¢P PACKAGE TO-252 (16 ¢P) A0 6.80 ¡Ó0.1 B0 10.3 ¡Ó0.1 K0 2.50 ¡Ó0.1 D0 £r2 D1 £r1.5 + 0.1 - 0 E 16.0 0.3¡Ó E1 1.75 0.1¡Ó E2 7.5 ¡Ó0.15 P0 8.0 ¡Ó0.1 P1 4.0 ¡Ó0.1 P2 2.0 ¡Ó0.15 T 0.3 ¡Ó0.05 TO-252 Reel S UNIT:¢P TAPE SIZE 16 ¢P REEL SIZE £r 330 M £r330 ¡Ó 0.5 N £r97 ¡Ó 1.0 W 17.0 + 1.5 - 0 T 2.2 H £r13.0 + 0.5 - 0.2 K 10.6 S 2.0 ¡Ó0.5 G R V 7