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S T U/D3055L
S amHop Microelectronics C orp. MAR ,09 2005 ver1.1
N-C hannel Logic Level E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
25V
F E AT UR E S S uper high dense cell design for low R DS (ON ).
ID
12A
R DS (ON) ( m W ) Max
70 @ V G S = 10V 95 @ V G S = 4.5V
R ugged and reliable. TO-252 and TO-251 P ackage.
D
D G S
G D
S
G
S TU S E R IE S TO-252AA(D-P AK)
S TD S E R IE S TO-251(l-P AK)
S
ABS OLUTE MAXIMUM R ATINGS (T C =25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a -P ulsed @ TJ=25 C S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit 25 16 12 40 5 50 -55 to 175 Unit V V A A A W C
Drain-S ource Diode Forward C urrent Maximum P ower Dissipation @ Tc=25 C Operating and S torage Temperature R ange
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient R JC R JA 3 50 C /W C /W
1
S T U/D3055L
E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted)
Parameter OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS
c
S ymbol
Condition
V GS = 0V, ID = 250uA V DS = 20V, V GS = 0V V GS = 16V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID =4A V GS =4.5V, ID = 3A V DS = 5V, V GS = 4.5V V DS = 10V, ID = 5.0A
Min Typ C Max Unit
25 1 100 0.8 1.1 50 62 15 6 240 97 68 285 113 80 1.8 70 95 V uA nA V
m-ohm m-ohm
ON CHAR ACTE R IS TICS b
Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance
A S
PF PF PF
DYNAMIC CHAR ACTE R IS TICS c
Input Capacitance Output Capacitance R everse Transfer Capacitance V DS =8V, V GS = 0V f =1.0MH Z
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge
tD(ON) tr tD(OFF) tf Qg Q gs Q gd
V DD = 10V, ID = 1A, V GE N = 4.5V, R L = 10 ohm R GEN = 6 ohm V DS =10V,ID =4A,V GS =10V V DS =10V,ID =4A,V GS =4.5V V DS =10V, ID = 4A, V GS =10V
2
16.2 19.2 18.4 23.3 5.9 3.2 1.3 0.8 21 26 6.5 3.5 1.6 1 10.1 11.5
ns ns ns ns nC nC nC nC
S T U/D3055L
E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted)
Parameter
5
Diode Forward Voltage
S ymbol
VSD
Condition
V GS = 0V, Is =5A
Min Typ Max Unit
1.0 V
C
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b
Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing.
20 V G S =5V 16 V G S =4.5V V G S =4V V G S =10V 8 4 V G S =2V 0 0 1 2 3 4 5 6 12 15 -55 C 25 C
ID , Drain C urrent(A)
I D , Drain C urrent (A)
T j=125 C 9
12
6
3 0 0.0
1
2
3
4
5
6
V DS , Drain-to-S ource Voltage (V )
V G S , G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
2.2
F igure 2. Trans fer C haracteris tics
V G S =10V I D =4A
R DS (ON) , On-R es is tance Normalized
500
1.8 1.4 1.0 0.6 0.2 0
C , C apacitance (pF )
400 300 200 100 C rs s 0 0 4 8 12 16
C is s
C os s 20 24
-50
-25
0
25
50
75
100 125 T j( C )
V DS , Drain-to S ource Voltage (V )
F igure 3. C apacitance
F igure 4. On-R es is tance Variation with Temperature
3
S T U/D3055L
B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 V DS =V G S I D =250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 I D =250uA
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation with T emperature
12
F igure 6. B reakdown V oltage V ariation with T emperature
20
gF S , T rans conductance (S )
8 6 4 2 0 V DS =10V 0 3 6 9 12 15
Is , S ource-drain current (A)
10
10
1 0 0 0.4 0.8 1.2 T J =25 C 1.6 2.0
I DS , Drain-S ource C urrent (A)
V S D , B ody Diode F orward V oltage (V )
F igure 7. T rans conductance V ariation with Drain C urrent
10
I D , Drain C urrent (A)
F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent
50
V G S , G ate to S ource V oltage (V )
R DS (
8 6 4 2 0 0
V DS =10V I D =4A
ON)
L im
it
10
10
10 0m
ms
11
1s
DC
s
0.1 0.03
V G S =10V S ingle P ulse T c=25 C 0.1 1 10 20 50
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
Qg, T otal G ate C harge (nC )
V DS , Drain-S ource V oltage (V )
F igure 9. G ate C harge
F igure 10. Maximum S afe O perating Area
4
S DU/D3055L
V DD ton V IN D VG S R GE N G
90%
toff tr
90%
RL V OUT
td(on) V OUT
td(off)
90% 10%
tf
10%
INVE R TE D
6
S
V IN
50% 10%
50%
P ULS E WIDTH
F igure 11. S witching T es t C ircuit
F igure 12. S witching Waveforms
2
r(t),Normalized E ffective T ransient T hermal Impedance
1 D=0.5
0.2 0.1 0.1 0.05 0.02 0.01 S ING LE P ULS E 0.01 10
-5 -4 -3 -2 -1
P DM t1 1. 2. 3. 4. 10 10 10 t2
R £cJ A (t)=r (t) * R £cJ A R £cJ A =S ee Datas heet T J M-T A = P DM* R £cJ A (t) Duty C ycle, D=t1/t2 1 10
10
S quare Wave P uls e Duration (s ec)
F igure 13. Normalized T hermal T rans ient Impedance C urve
5
S T U/D3055L
5 95 7 84 9 6.00
35 05 85 0.94 4 3 0
9 7 30 3 9 36
3 41 3 3 5 1
4
L2
2.29 9.70 1.425 0.650 0.600
BSC 1 1.625 0.850 REF.
0.090 82 56 6 0.024
BSC 398 0.064 33 REF.
6
S T U/D3055L
TO-251 Tube
TO251 Tube/TO-252 Tape and Reel Data
" A"
TO-252 Carrier Tape
UNIT:¢P PACKAGE TO-252 (16 ¢P) A0 6.80 ¡Ó0.1 B0 10.3 ¡Ó0.1 K0 2.50 ¡Ó0.1 D0 £r2 D1
£r1.5 + 0.1 - 0
E 16.0 0.3¡Ó
E1 1.75 0.1¡Ó
E2 7.5 ¡Ó0.15
P0 8.0 ¡Ó0.1
P1 4.0 ¡Ó0.1
P2 2.0 ¡Ó0.15
T 0.3 ¡Ó0.05
TO-252 Reel
S
UNIT:¢P TAPE SIZE 16 ¢P REEL SIZE £r 330 M £r330 ¡Ó 0.5 N £r97 ¡Ó 1.0 W
17.0 + 1.5 - 0
T 2.2
H
£r13.0 + 0.5 - 0.2
K 10.6
S 2.0 ¡Ó0.5
G
R
V
7
