N-Channel Logic Level E nhancement Mode F ield E ffect Transistor

www.DataSheet4U.com S T U/D3055L S amHop Microelectronics C orp. MAR ,09 2005 ver1.1 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 25V F E AT UR E S S uper high dense cell design for low R DS (ON). ID 12A R DS (ON) ( m W ) Max 70 @ V G S = 10V 95 @ V G S = 4.5V R ugged and reliable. TO-252 and TO-251 P ackage. D D G S G D S G S TU S E R IE S TO-252AA(D-P AK) S TD S E R IE S TO-251(l-P AK) S ABS OLUTE MAXIMUM R ATINGS (TC=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a -P ulsed @ TJ=25 C S ymbol VDS VGS ID IDM IS PD TJ, TS TG Limit 25 16 12 40 5 50 -55 to 175 Unit V V A A A W C Drain-S ource Diode Forward C urrent Maximum P ower Dissipation @ Tc=25 C Operating and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient R JC R JA 3 50 C /W C /W 1 S T U/D3055L E LE CTR ICAL CHAR ACTE R IS TICS (TA =25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS c S ymbol Condition VGS = 0V, ID = 250uA VDS = 20V, VGS = 0V VGS = 16V, VDS = 0V VDS = VGS, ID = 250uA VGS =10V, ID =4A VGS =4.5V, ID = 3A VDS = 5V, VGS = 4.5V VDS = 10V, ID = 5.0A Min Typ C Max Unit 25 1 100 0.8 1.1 50 62 15 6 240 97 68 285 113 80 1.8 70 95 V uA nA V m-ohm m-ohm ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance VDS =8V, VGS = 0V f =1.0MHZ S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd VDD = 10V, ID = 1A, VGEN = 4.5V, R L = 10 ohm RGEN = 6 ohm VDS=10V,ID =4A,VGS=10V VDS=10V,ID =4A,VGS=4.5V VDS =10V, ID = 4A, VGS =10V 2 16.2 19.2 18.4 23.3 5.9 3.2 1.3 0.8 21 26 6.5 3.5 1.6 1 10.1 11.5 ns ns ns ns nC nC nC nC S T U/D3055L E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted) Parameter 5 Diode Forward Voltage S ymbol VSD Condition VGS = 0V, Is =5A Min Typ Max Unit 1.0 V C DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 20 V G S =5V 16 V G S =4.5V V G S =4V V G S =10V 8 4 V G S =2V 0 0 1 2 3 4 5 6 12 15 -55 C 25 C ID, Drain C urrent(A) ID, Drain C urrent (A) T j=125 C 9 12 6 3 0 0.0 1 2 3 4 5 6 V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 2.2 F igure 2. Trans fer C haracteris tics V G S =10V ID=4A R DS (ON), On-R es is tance Normalized 500 1.8 1.4 1.0 0.6 0.2 0 C , C apacitance (pF ) 400 300 200 100 C rs s 0 0 4 8 12 16 C is s C os s 20 24 -50 -25 0 25 50 75 100 125 T j( C ) V DS , Drain-to S ource Voltage (V ) F igure 3. C apacitance F igure 4. On-R es is tance Variation with Temperature 3 S T U/D3055L B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 V DS =V G S ID=250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 ID=250uA T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 12 F igure 6. B reakdown V oltage V ariation with T emperature 20 gFS , T rans conductance (S ) 8 6 4 2 0 V DS =10V 0 3 6 9 12 15 Is , S ource-drain current (A) 10 10 1 0 0 0.4 0.8 1.2 T J =25 C 1.6 2.0 IDS , Drain-S ource C urrent (A) V S D, B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent 10 ID, Drain C urrent (A) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 50 V G S , G ate to S ource V oltage (V ) R DS ( 8 6 4 2 0 0 VDS =10V ID=4A ON) L im it 10 10 10 0m ms 11 1s DC s 0.1 0.03 VGS =10V S ingle P ulse T c=25 C 0.1 1 10 20 50 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 Qg, T otal G ate C harge (nC ) V DS , Drain-S ource V oltage (V ) F igure 9. G ate C harge F igure 10. Maximum S afe O perating Area 4 S DU/D3055L V DD ton V IN D VG S R GE N G 90% toff tr 90% RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D 6 S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit F igure 12. S witching Waveforms 2 r(t),Normalized E ffective T ransient T hermal Impedance 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 S ING LE P ULS E 0.01 10 -5 -4 -3 -2 -1 P DM t1 1. 2. 3. 4. 10 10 10 t2 R £cJ A (t)=r (t) * R £cJ A R £cJ A=S ee Datas heet T J M-T A = P DM* R £cJ A (t) Duty C ycle, D=t1/t2 1 10 10 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 5 S T U/D3055L 5 95 7 84 9 6.00 35 05 85 0.94 4 3 0 9 7 30 3 9 36 3 41 3 3 5 1 4 L2 2.29 9.70 1.425 0.650 0.600 BSC 1 1.625 0.850 REF. 0.090 82 56 6 0.024 BSC 398 0.064 33 REF. 6 S T U/D3055L TO-251 Tube TO251 Tube/TO-252 Tape and Reel Data " A" TO-252 Carrier Tape UNIT:¢P PACKAGE TO-252 (16 ¢P) A0 6.80 ¡Ó0.1 B0 10.3 ¡Ó0.1 K0 2.50 ¡Ó0.1 D0 £r2 D1 £r1.5 + 0.1 -0 E 16.0 0.3¡Ó E1 1.75 0.1¡Ó E2 7.5 ¡Ó0.15 P0 8.0 ¡Ó0.1 P1 4.0 ¡Ó0.1 P2 2.0 ¡Ó0.15 T 0.3 ¡Ó0.05 TO-252 Reel S UNIT:¢P TAPE SIZE 16 ¢P REEL SIZE £r 330 M £r330 ¡Ó 0.5 N £r97 ¡Ó 1.0 W 17.0 + 1.5 -0 T 2.2 H £r13.0 + 0.5 - 0.2 K 10.6 S 2.0 ¡Ó0.5 G R V 7