N-Channel Enhancement Mode Field Effect Transistor

www.DataSheet4U.com STU/D3055L2-60 SamHop Microelectronics Corp. Nov 26 , 2004 Ver1.2 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 20V FEATURES Super high dense cell design for low RDS(ON). ID 14A RDS(ON) ( m £[ ) Max 65 @ VGS = 4.5V 90 @ VGS = 2.5V Rugged and reliable. TO-252 and TO-251 Package. D D G S G D S G STU SERIES TO-252AA(D-PAK) STD SERIES TO-251(l-PAK) S ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage a Drain Current-Continuous @TJ=125 C b -Pulsed (300ms Pulse Width) Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 20 12 14 23 10 50 -55 to 150 Unit V V A A A W C Drain-Source Diode Forward Current Maximum Power Dissipation a a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1 R JC R JA 3 50 C /W C /W STU/D3055L2-60 ELECTRICAL CHARACTERISTICS (TA 25 C unless otherwise noted) = Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS b Symbol Condition VGS 0V, ID 250uA VDS 16V, VGS 0V VGS 12V, VDS 0V VDS VGS, ID = 250uA VGS 4.5V, ID 6.0A VGS 2.5V, ID 5.2A VDS = 5V, VGS = 4.5V VDS 10V, ID 6.0A Min Typ C Max Unit 20 1 100 0.7 1.2 50 75 15 10 528 139 107 1.8 65 90 V uA nA V m-ohm m-ohm ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) ID(ON) gFS c Drain-Source On-State Resistance On-State Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS c VDS =8V, VGS = 0V f =1.0MHZ SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge tD(ON) t tD(OFF) t Qg Qgs Qgd VDD = 10V ID = 1A VGEN = 4.5V RL = 10 ohm RGEN = 6 ohm VDS=10V,ID =6A,VGS=10V VDS=10V,ID =6A,VGS=4.5V VDS =10V, ID = 6A VGS =10V 2 13.7 8.9 25.4 14.1 14.5 7.2 1.3 2.1 ns ns ns ns nC nC nC nC S T U/D3055L2-60 E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted) Parameter 5 Diode Forward Voltage S ymbol VSD Condition VGS = 0V, Is =10A Min Typ Max Unit 1 1.3 V C DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 10 V G S =10,9,8,7,6,5,4,3V 25 25 C 8 20 ID, Drain C urrent(A) ID, Drain C urrent (A) 6 V G S =2V 4 2 0 15 T j=125 C 10 5 -55 C 0 0.0 0 2 4 6 8 10 12 0.5 1 1.5 2 2.5 3 V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics R DS (ON), On-R es is tance(Ohms ) 2.2 1.8 1.4 1.0 0.6 0.2 0 F igure 2. Trans fer C haracteris tics V G S =4.5V ID=6A 1500 C , C apacitance (pF ) 1200 900 600 C is s 300 0 C rs s 0 2 4 6 8 10 12 C os s -50 -25 0 25 50 75 100 125 T j( C ) V DS , Drain-to S ource Voltage (V ) F igure 3. C apacitance F igure 4. On-R es is tance Variation with Temperature 3 S T U/D3055L2-60 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 V DS =V G S ID=250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 ID=250uA T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 24 F igure 6. B reakdown V oltage V ariation with T emperature 20 gFS , T rans conductance (S ) 16 12 8 4 0 V DS =10V 0 5 10 15 20 25 Is , S ource-drain current (A) 20 10 1 0 0.4 0.6 0.8 1.0 T J =25 C 1.2 1.4 IDS , Drain-S ource C urrent (A) V S D, B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent 10 ID, Drain C urrent (A) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 40 V G S , G ate to S ource V oltage (V ) 8 6 4 2 0 0 VDS =10V ID=6A 10 R DS (O N ) Li m it 10 10 0m s ms 11 DC 1s 0.1 0.03 VGS =4.5V S ingle P ulse T c=25 C 0.1 1 10 20 50 2 4 6 8 10 12 14 16 Qg, T otal G ate C harge (nC ) V DS , Drain-S ource V oltage (V ) F igure 9. G ate C harge F igure 10. Maximum S afe O perating Area 4 S T U/D3055L2-60 V DD ton V IN D VG S R GE N G 90% toff tr 90% RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D 6 S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit F igure 12. S witching Waveforms 2 r(t),Normalized E ffective T ransient T hermal Impedance 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 S ING LE P ULS E 0.01 10 -5 -4 -3 -2 -1 P DM t1 1. 2. 3. 4. 10 10 10 t2 R £cJ A (t)=r (t) * R £cJ A R £cJ A=S ee Datas heet T J M-T A = P DM* R £cJ A (t) Duty C ycle, D=t1/t2 1 10 10 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 5 S T U/D3055L2-60 6 S T U/D3055L2-60 5 95 7 84 9 6.00 35 05 85 0.94 4 3 0 9 7 30 3 9 36 3 41 3 3 5 1 4 L2 2.29 9.70 1.425 0.650 0.600 BSC 1 1.625 0.850 REF. 0.090 82 56 6 0.024 BSC 398 0.064 33 REF. 7 S T U/D3055L2-60 TO-251 Tube TO251 Tube/TO-252 Tape and Reel Data " A" TO-252 Carrier Tape UNIT:¢P PACKAGE TO-252 (16 ¢P) A0 6.80 ¡Ó0.1 B0 10.3 ¡Ó0.1 K0 2.50 ¡Ó0.1 D0 £r2 D1 £r1.5 + 0.1 -0 E 16.0 0.3¡Ó E1 1.75 0.1¡Ó E2 7.5 ¡Ó0.15 P0 8.0 ¡Ó0.1 P1 4.0 ¡Ó0.1 P2 2.0 ¡Ó0.15 T 0.3 ¡Ó0.05 TO-252 Reel S UNIT:¢P TAPE SIZE 16 ¢P REEL SIZE £r 330 M £r330 ¡Ó 0.5 N £r97 ¡Ó 1.0 W 17.0 + 1.5 -0 T 2.2 H £r13.0 + 0.5 - 0.2 K 10.6 S 2.0 ¡Ó0.5 G R V 8