PNP Silicon Transistor

Semiconductor STS9015 PNP Silicon Transistor Description • General purpose application. • Switching application. Features • Excellent hFE linearity : hFE(IC=0.1mA) / hFE(IC=2mA) = 0.95(Typ.) • Low noise : NF = 10dB(Max.) • Complementary pair with STS9014 Ordering Information Type NO. STS9015 Marking STS9015 Package Code TO-92 Outline Dimensions 3.45±0.1 4.5±0.1 www.DataSheet4U.com unit : mm 2.25±0.1 4.5±0.1 0.4±0.02 2.06±0.1 14.0±0.40 1.27 Typ. 2.54 Typ. 1 2 3 1.20±0.1 0.38 PIN Connections 1. Emitter 2. Base 3. Collector KST-9018-000 1 STS9015 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Emitter current Collector dissipation Junction temperature Storage temperature (Ta=25°C) ° Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Ratings -50 -50 -5 -150 150 625 150 -55~150 Unit V V V mA mA mW °C °C Electrical Characteristics Characteristic Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Transition frequency Collector output capacitance Noise figure (Ta=25°C) ° Symbol ICBO IEBO hFE* VCE(sat) fT Cob NF Test Condition VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-5V, IC=-1mA IC=-100mA, IB=-10mA VCE=-10V, IC=-1mA VCB=-10V, IE=0, f=1MHz VCE=-6V, IC=-0.1mA f=1KHz, Rg=10K Min. Typ. Max. 100 60 -0.1 4 -50 -100 1000 -0.3 7 10 Unit nA nA V MHz pF dB *: hFE rank / B : 100~300, C : 200~600, D : 400~1000. KST-9018-000 2 STS9015 Electrical Characteristic Curves Fig. 1 PC-Ta Fig. 2 IC-VBE 5 Fig. 3 IC-VCE Fig. 4 hFE-IC Fig. 5 VCE(sat)-IC KST-9018-000 3