Semiconductor
STS9012
PNP Silicon Transistor
Description
• General purpose application. • Switching application.
Features
• Excellent hFE linearity. • Complementary pair with STS9013
Ordering Information
Type NO. STS9012 Marking STS9012 Package Code TO-92
Outline Dimensions
3.45±0.1 4.5±0.1
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unit : mm
2.25±0.1
4.5±0.1
0.4±0.02
2.06±0.1
14.0±0.40
1.27 Typ. 2.54 Typ.
1 2 3
1.20±0.1
0.38
PIN Connections 1. Emitter 2. Base 3. Collector
KST-9015-000
1
STS9012
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Emitter current Collector dissipation Junction temperature Storage temperature
(Ta=25°C) °
Symbol
VCBO VCEO VEBO IC IE PC Tj Tstg
Ratings
-40 -30 -5 -500 500 625 150 -55~150
Unit
V V V mA mA mW °C °C
Electrical Characteristics
Characteristic
Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Base-Emitter voltage Transistor frequency Collector output capacitance
(Ta=25°C) °
Symbol
ICBO IEBO hFE* VCE(sat) VBE fT Cob
Test Condition
VCB=-35V, IE=0 VEB=-5V, IC=0 VCE=-1V, IC=-50mA IC=-100mA, IB=-10mA VCE=-1V, IC=-100mA VCE=-6V, IC=-20mA VCB=-6V, f=1MHz
Min. Typ. Max.
96 150 -0.1 -0.8 7 -0.1 -0.1 246 -0.25 -1.0 -
Unit
µA µA V V MHz pF
*
: hFE rank / F : 96~135, G : 118~166, H : 144~202, I : 176~246.
KST-9015-000
2
STS9012
Electrical Characteristic Curves
Fig. 1 PC - Ta Fig. 2 IC - VBE
Fig. 3 I C - VCE
Fig. 4 VCE(sat) - IC
Fig. 5 hFE - IC
Fig. 6 hFE -
IC
KST-9015-000
3
