STRH13N20SY3
N-channel 200V - 0.18Ω - SMD-0.5 Rad-hard low gate charge STripFET™ Power MOSFET
General features
Type STRH13N20SY3
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VDSS 200V
Low RDS(on) Fast switching Single event effect (SEE) hardned Low total gate charge Light weight 100% avalanche tested Application oriented characterization Hermetically sealed Heavy ion SOA 100kRad TID SEL & SEGR with 34Mev/cm²/mg LET ions SMD-0.5
Internal schematic diagram
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Description
This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to sustain high TID and provide immunity to heavy ion effects. It is therefore suitable as power switch in mainly highefficiency DC-DC converters. It is also intended for any application with low gate charge drive requirements.
Applications
■ ■
Satellite High reliability
Order codes
Part number STRH13N20SY1 STRH30N20SY3
1. Mil temp range 2. Space flights parts (full ESA flow screening)
(1) (2)
Marking RH13N20SY1 RH30N20SY3
Package SMD-0.5 SMD-0.5
Packaging Individual strip pack Individual strip pack
March 2007
Rev 2
1/12
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Contents
STRH13N20SY3
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 2.2 2.3 Pre-irradiation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Post-irradiation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics (curves) ............................. 7
3 4 5
Test circuit
................................................ 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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STRH13N20SY3
Electrical ratings
1
Electrical ratings
Table 1.
Symbol VDS VGS ID
(1)
Absolute maximum ratings (pre-irradiation)
Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC= 25°C Drain current (continuous) at TC= 100°C Drain current (pulsed) Total dissipation at TC= 25°C Total dissipation at TC= 25°C Peak diode recovery voltage slope Storage temperature Max. operating junction temperature Value 200 ±16 13 8.2 52 3 75 4 -55 to 150 150 Unit V V A A A W W V/ns °C °C
ID (1) IDM (2) PTOT PTOT
(3) (1)
dv/dt (4) Tstg Tj
1. Rated according to the Rthj-case 2. Pulse width limited by safe operating area 3. Rated according to the Rthj-amb 4. ISD < 13A, di/dt < 200A/µs, VDD < 160V
Table 2.
Symbol Rthj-case Rthj-amb(1)
Thermal data
Parameter Thermal resistance junction-case Thermal resistance junction -amb Value 1.67 50 Unit °C/W °C/W
1. When mounted on heat sink of 300mm², t<10sec
Table 3.
Symbol IAR EAS EAR
Avalanche characteristics
Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=50V) Repetitive avalanche Value 13 200 7.5 Unit A mJ mJ
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Electrical characteristics
STRH13N20SY3
2
Electrical characteristics
(TCASE = 25°C unless otherwise specified)
2.1
Pre-irradiation
Table 4.
Symbol IDSS IGSS BVDSS VGS(th) RDS(on)
On/off states
Parameter Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Drain-to-source breakdown voltage Gate threshold voltage Static drain-source on resistance Test conditions 80% BVDss VGS = ±16V VGS = 0V, ID = 1mA VDS =VGS, ID = 1mA VGS = 12V ID = 6.5A 200 2 0.18 4.5 0.22 Min. Typ. Max. 10
±100
Unit µA nA V V Ω
Table 5.
Symbol Ciss Coss Crss Qg Qgs Qgd
Dynamic
Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-to-source charge Gate-to-drain (“Miller”) charge Gate input resistance Test conditions VGS = 0V, VDS = 25V, f=1MHz Min. Typ. 2250 226 23 53 12 17 74 17 24 Max. Unit pF pF pF nC nC nC
VDD = 160V, ID = 13A, VGS=12V f=1MHz Gate DC Bias=0 Test signal level=20mV open drain
RG
1.3
2.5
Ω
Table 6.
Symbol td(on) tr td(off) tf
Switching times
Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions Min. Typ. 22 33 28 8 Max Unit ns ns ns ns
VDD = 100V, ID = 13A, RG = 4.7Ω, VGS = 12V
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STRH13N20SY3
Electrical characteristics
Table 7.
Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 13A, VGS = 0 ISD = 13A, di/dt = 100A/µs VDD= 20V, Tj = 25°C ISD = 13A, di/dt = 100A/µs VDD= 20V, Tj = 150°C 310 3.3 21 372 4.2 23 Test conditions Min. Typ. Max 13 52 1.5 Unit A A V ns µC A ns µC A
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
2.2
Post-irradiation
The ST Rad-Hard Power MOSFETs are tested to verify the radiation capability. The technology is extremely resistant to assurance well functioning of the device inside the radiation environments. Every manufacturing lot is tested for total ionizing dose. (@Tj=25°C up to 100Krad (a)) Table 8.
Symbol IDSS IGSS BVDSS VGS(th) RDS(on)
On/off states
Parameter Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Drain-to-source breakdown voltage Gate threshold voltage Static drain-source on resistance Test conditions 80% BVDss VGS = ±16V VGS = 0V, ID = 1mA VDS =VGS, ID = 1mA VGS = 12V ID = 6.5A 200 2 0.18 4.5 0.22 Min. Typ. Max. 10
±100
Unit µA nA V V Ω
a. According to ESCC 22900 specification, Co60 gamma rays, dose rags:0.1rad/sec.
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Electrical characteristics
STRH13N20SY3
Table 9.
Ion Kr Xe
Single event effect, SOA(1)
Let (Mev/(mg/cm2)) 34 55.9 Energy (MeV) 316 459 Range (µm) 43 43 VDS (V) @VGS0V 200 200
1. Rad-Hard Power MOSFETs have been characterized in heavy ion environment for single event effect (SEE). Single event effect characterization is illustrate
Table 10.
Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 13A, VGS = 0 ISD = 13A, di/dt = 100A/µs VDD= 20V, Tj = 25°C ISD = 13A, di/dt = 100A/µs VDD= 20V, Tj = 150°C 310 3.3 21 372 4.2 23 Test conditions Min Typ Max Unit 13 52 1.5 A A V ns µC A ns µC A
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
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STRH13N20SY3
Electrical characteristics
2.3
Figure 1.
Electrical characteristics (curves)
Safe operating area Figure 2. Thermal impedance
Figure 3.
Output characteristics
Figure 4.
Transfer characteristics
Figure 5.
Gate charge vs gate-source voltage Figure 6.
Capacitance variations
7/12
Electrical characteristics Figure 7. Normalized BVDSS vs temperature Figure 8.
STRH13N20SY3 Static drain-source on resistance
Figure 9.
Normalized gate threshold voltage vs temperature
Figure 10. Normalized on resistance vs temperature
Figure 11. Source drain-diode forward characteristics
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STRH13N20SY3
Test circuit
3
Test circuit
Figure 12. Switching times test circuit for resistive load (1)
1. Max driver VGS slope = 1V/ns (no DUT)
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Package mechanical data
STRH13N20SY3
4
Package mechanical data
SMD-0.5 MECHANICAL DATA
DIM. A A1 b b1 b2 b3 D D1 E e 0.76 7.52 1.91 mm. MIN. TYP 3.00 0.38 7.26 5.72 2.41 3.05 10.16 0.030 0.296 0.075 MAX. MIN. inch TYP. 0.118 0.015 0.286 0.225 0.095 0.120 0.400 MAX.
7386434A
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STRH13N20SY3
Revision history
5
Revision history
Table 11.
Date 21-Dec-2006 26-Mar-2007
Revision history
Revision 1 2 First release Complete version Changes
11/12
STRH13N20SY3
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