Power MOSFETs for Aerospace

STRH10N25ESY3 N-channel 250V - 0.95Ω - TO-257AA Rad-hard low gate charge STripFET™ Power MOSFET General features Type STRH10N25ESY3 ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ www.DataSheet4U.com VDSS 250V Low RDS(on) Fast switching Single event effect (SEE) hardned Low total gate charge Light weight 100% avalanche tested Application oriented characterization Hermetically sealed Heavy ion SOA 100kRad TID SEL & SEGR with 34Mev/cm²/mg LET ions TO-257AA 1 2 3 Internal schematic diagram ■ Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to sustain high TID and provide immunity to heavy ion effects. It is therefore suitable as power switch in mainly highefficiency DC-DC converters. It is also intended for any application with low gate charge drive requirements. Applications ■ ■ Satellite High reliability applications Order codes Part number STRH10N25ESY1 STRH10N25ESY3 1. Mil temp range 2. Space flights parts (full ESA flow screening) (1) (2) Marking RH10N25ESY1 RH10N25ESY3 Package TO-257AA TO-257AA Packaging Tube Tube March 2007 Rev 2 1/12 www.st.com 12 Contents STRH10N25ESY3 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 2.2 2.3 Pre-irradiation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Radiation characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics (curves) ............................. 7 3 4 5 Test circuit ................................................ 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 STRH10N25ESY3 Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VGS ID (1) Absolute maximum ratings (pre-irradiation) Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC= 25°C Drain current (continuous) at TC= 100°C Drain current (pulsed) Total dissipation at TC= 25°C Peak diode recovery voltage slope Storage temperature Max. operating junction temperature Value 250 ± 16 10 6.5 40 85 1.9 -55 to 150 150 Unit V V A A A W V/ns °C °C ID (1) IDM (2) PTOT (1) dv/dt (3) Tstg Tj 1. Rated according to the Rthj-case 2. Pulse width limited by safe operating area 3. ISD < 12A, di/dt < 300A/µs, VDD = 80%V(BR)DSS Table 2. Symbol Thermal data Parameter Value 1.47 0.2 62.5 Unit °C/W °C/W °C/W Rthj-case Thermal resistance junction-case Rthc-s Case-to-sink Rthj-amb Thermal resistance junction -amb Table 3. Symbol IAR EAS EAR Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=50V) Repetitive avalanche Value 10 60 8.5 Unit A mJ mJ 3/12 Electrical characteristics STRH10N25ESY3 2 Electrical characteristics (TCASE = 25°C unless otherwise specified) 2.1 Pre-irradiation Table 4. Symbol IDSS IGSS BVDSS VGS(th) RDS(on) On/off states Parameter Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Drain-to-source breakdown voltage Gate threshold voltage Static drain-source on resistance Test conditions 80% BVDss VGS = ±16V ID = 1mA, VGS = 0V VDS =VGS, ID = 1mA VGS = 12V, ID = 6A 250 2 0.95 4.5 1.1 Min. Typ. Max. 10 ±100 Unit µA nA V V Ω Table 5. Symbol Ciss Coss Crss Qg Qgs Qgd Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-to-source charge Gate-to-drain (“Miller”) charge Gate input resistance Test conditions VDS = 0V, f=1MHz, VGS=12V Min. Typ. 890 83 10 23 5 7 32 7 10 Max. Unit pF pF pF nC nC nC VDD = 200V, ID = 6A, VGS=12V f=1MHz Gate DC Bias=0 Test signal level=20mV open drain RG 3.2 6 Ω 4/12 STRH10N25ESY3 Electrical characteristics Table 6. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions Min. Typ. 14 19 27 9 Max Unit ns ns ns ns VDD = 125V, ID = 10A, RG = 4.7Ω, VGS = 12V Table 7. Symbol ISD ISDM (1) Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 10A, VGS = 0 ISD = 12A, di/dt = 100A/µs VDD= 62V, Tj = 25°C ISD = 12A, di/dt = 100A/µs VDD= 62V, Tj = 150°C 424 3.7 18 498 4.8 19.5 Test conditions Min. Typ. Max Unit 10 40 1.5 A A V ns µC A ns µC A VSD (2) trr Qrr IRRM trr Qrr IRRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% 2.2 Radiation characteristics The ST Rad-Hard Power MOSFETs are tested to verify the radiation capability. The technology is extremely resistant to assurance well functioning of the device inside the radiation environments. Every manufacturing lot is tested for total ionizing dose. (@Tj=25°C up to 100Krad (a)) Table 8. Symbol IDSS IGSS BVDSS VGS(th) RDS(on) On/off states Parameter Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Drain-to-source breakdown voltage Gate threshold voltage Static drain-source on resistance Test conditions 80% BVDss VGS = ±16V ID = 1mA, VGS = 0V VDS =VGS, ID = 1mA VGS = 12V, ID = 6A 250 2 0.95 4.5 1.1 Min. Typ. Max. 10 ±100 Unit µA nA V V Ω a. According to ESCC 22900 specification, Co60 gamma rays, dose rags:0.01rad/sec. 5/12 Electrical characteristics STRH10N25ESY3 Table 9. Ion Kr Xe Single event effect, SOA(1) Let (Mev/(mg/cm2)) 34 55.9 Energy (MeV) 316 459 Range (µm) 43 43 VDS (V) @VGS0V 250 244 1. Rad-Hard Power MOSFETs have been characterized in heavy ion environment for single event effect (SEE). Single event effect characterization is illustrate Table 10. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 10A, VGS = 0 ISD = 12A, di/dt = 100A/µs VDD= 62V, Tj = 25°C ISD = 12A, di/dt = 100A/µs VDD= 62V, Tj = 150°C 424 3.7 18 498 4.8 19.5 Test conditions Min. Typ. Max Unit 10 40 1.5 A A V ns µC A ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% 6/12 STRH10N25ESY3 Electrical characteristics 2.3 Figure 1. Electrical characteristics (curves) Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Gate charge vs gate-source voltage Figure 6. Capacitance variations 7/12 Electrical characteristics Figure 7. Normalized BVDSS vs temperature Figure 8. STRH10N25ESY3 Static drain-source on resistance Figure 9. Normalized gate threshold voltage vs temperature Figure 10. Normalized on resistance vs temperature Figure 11. Source drain-diode forward characteristics 8/12 STRH10N25ESY3 Test circuit 3 Test circuit Figure 12. Switching times test circuit for resistive load (1) 1. Max driver VGS slope = 1V/ns (no DUT) 9/12 Package mechanical data STRH10N25ESY3 4 Package mechanical data TO-257AA MECHANICAL DATA DIM. A B C D E F G H I J K L M N R 1.65 15.2 2.29 0.71 0.065 3.56 4.7 1.02 3.68 13.51 5.26 0.76 3.05 2.54 16.5 0.598 0.090 0.028 3.81 0.140 mm. MIN. TYP 10.54 10.54 16.64 5.33 0.185 0.40 0.145 0.532 0.207 0.030 0.120 0.100 0.650 0.150 MAX. MIN. inch TYP. 0.415 0.415 0.655 0.210 MAX. 0117268C 10/12 STRH10N25ESY3 Revision history 5 Revision history Table 11. Date 18-Dec-2006 26-Mar-2007 Revision history Revision 1 2 First release Complete version Changes 11/12 STRH10N25ESY3 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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