STRH10N25ESY3
N-channel 250V - 0.95Ω - TO-257AA Rad-hard low gate charge STripFET™ Power MOSFET
General features
Type STRH10N25ESY3
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VDSS 250V
Low RDS(on) Fast switching Single event effect (SEE) hardned Low total gate charge Light weight 100% avalanche tested Application oriented characterization Hermetically sealed Heavy ion SOA 100kRad TID SEL & SEGR with 34Mev/cm²/mg LET ions TO-257AA
1 2 3
Internal schematic diagram
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Description
This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to sustain high TID and provide immunity to heavy ion effects. It is therefore suitable as power switch in mainly highefficiency DC-DC converters. It is also intended for any application with low gate charge drive requirements.
Applications
■ ■
Satellite High reliability applications
Order codes
Part number STRH10N25ESY1 STRH10N25ESY3
1. Mil temp range 2. Space flights parts (full ESA flow screening)
(1) (2)
Marking RH10N25ESY1 RH10N25ESY3
Package TO-257AA TO-257AA
Packaging Tube Tube
March 2007
Rev 2
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Contents
STRH10N25ESY3
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 2.2 2.3 Pre-irradiation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Radiation characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics (curves) ............................. 7
3 4 5
Test circuit
................................................ 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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STRH10N25ESY3
Electrical ratings
1
Electrical ratings
Table 1.
Symbol VDS VGS ID
(1)
Absolute maximum ratings (pre-irradiation)
Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC= 25°C Drain current (continuous) at TC= 100°C Drain current (pulsed) Total dissipation at TC= 25°C Peak diode recovery voltage slope Storage temperature Max. operating junction temperature Value 250 ± 16 10 6.5 40 85 1.9 -55 to 150 150 Unit V V A A A W V/ns °C °C
ID (1) IDM (2) PTOT
(1)
dv/dt (3) Tstg Tj
1. Rated according to the Rthj-case 2. Pulse width limited by safe operating area 3. ISD < 12A, di/dt < 300A/µs, VDD = 80%V(BR)DSS
Table 2.
Symbol
Thermal data
Parameter Value 1.47 0.2 62.5 Unit °C/W °C/W °C/W
Rthj-case Thermal resistance junction-case Rthc-s Case-to-sink
Rthj-amb Thermal resistance junction -amb
Table 3.
Symbol IAR EAS EAR
Avalanche characteristics
Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=50V) Repetitive avalanche Value 10 60 8.5 Unit A mJ mJ
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Electrical characteristics
STRH10N25ESY3
2
Electrical characteristics
(TCASE = 25°C unless otherwise specified)
2.1
Pre-irradiation
Table 4.
Symbol IDSS IGSS BVDSS VGS(th) RDS(on)
On/off states
Parameter Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Drain-to-source breakdown voltage Gate threshold voltage Static drain-source on resistance Test conditions 80% BVDss VGS = ±16V ID = 1mA, VGS = 0V VDS =VGS, ID = 1mA VGS = 12V, ID = 6A 250 2 0.95 4.5 1.1 Min. Typ. Max. 10
±100
Unit µA nA V V Ω
Table 5.
Symbol Ciss Coss Crss Qg Qgs Qgd
Dynamic
Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-to-source charge Gate-to-drain (“Miller”) charge Gate input resistance Test conditions VDS = 0V, f=1MHz, VGS=12V Min. Typ. 890 83 10 23 5 7 32 7 10 Max. Unit pF pF pF nC nC nC
VDD = 200V, ID = 6A, VGS=12V f=1MHz Gate DC Bias=0 Test signal level=20mV open drain
RG
3.2
6
Ω
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STRH10N25ESY3
Electrical characteristics
Table 6.
Symbol td(on) tr td(off) tf
Switching times
Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions Min. Typ. 14 19 27 9 Max Unit ns ns ns ns
VDD = 125V, ID = 10A, RG = 4.7Ω, VGS = 12V
Table 7.
Symbol ISD ISDM
(1)
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 10A, VGS = 0 ISD = 12A, di/dt = 100A/µs VDD= 62V, Tj = 25°C ISD = 12A, di/dt = 100A/µs VDD= 62V, Tj = 150°C 424 3.7 18 498 4.8 19.5 Test conditions Min. Typ. Max Unit 10 40 1.5 A A V ns µC A ns µC A
VSD (2) trr Qrr IRRM trr Qrr IRRM
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
2.2
Radiation characteristics
The ST Rad-Hard Power MOSFETs are tested to verify the radiation capability. The technology is extremely resistant to assurance well functioning of the device inside the radiation environments. Every manufacturing lot is tested for total ionizing dose. (@Tj=25°C up to 100Krad (a)) Table 8.
Symbol IDSS IGSS BVDSS VGS(th) RDS(on)
On/off states
Parameter Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Drain-to-source breakdown voltage Gate threshold voltage Static drain-source on resistance Test conditions 80% BVDss VGS = ±16V ID = 1mA, VGS = 0V VDS =VGS, ID = 1mA VGS = 12V, ID = 6A 250 2 0.95 4.5 1.1 Min. Typ. Max. 10
±100
Unit µA nA V V Ω
a. According to ESCC 22900 specification, Co60 gamma rays, dose rags:0.01rad/sec.
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Electrical characteristics
STRH10N25ESY3
Table 9.
Ion Kr Xe
Single event effect, SOA(1)
Let (Mev/(mg/cm2)) 34 55.9 Energy (MeV) 316 459 Range (µm) 43 43 VDS (V) @VGS0V 250 244
1. Rad-Hard Power MOSFETs have been characterized in heavy ion environment for single event effect (SEE). Single event effect characterization is illustrate
Table 10.
Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 10A, VGS = 0 ISD = 12A, di/dt = 100A/µs VDD= 62V, Tj = 25°C ISD = 12A, di/dt = 100A/µs VDD= 62V, Tj = 150°C 424 3.7 18 498 4.8 19.5 Test conditions Min. Typ. Max Unit 10 40 1.5 A A V ns µC A ns µC A
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
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STRH10N25ESY3
Electrical characteristics
2.3
Figure 1.
Electrical characteristics (curves)
Safe operating area Figure 2. Thermal impedance
Figure 3.
Output characteristics
Figure 4.
Transfer characteristics
Figure 5.
Gate charge vs gate-source voltage Figure 6.
Capacitance variations
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Electrical characteristics Figure 7. Normalized BVDSS vs temperature Figure 8.
STRH10N25ESY3 Static drain-source on resistance
Figure 9.
Normalized gate threshold voltage vs temperature
Figure 10. Normalized on resistance vs temperature
Figure 11. Source drain-diode forward characteristics
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STRH10N25ESY3
Test circuit
3
Test circuit
Figure 12. Switching times test circuit for resistive load (1)
1. Max driver VGS slope = 1V/ns (no DUT)
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Package mechanical data
STRH10N25ESY3
4
Package mechanical data
TO-257AA MECHANICAL DATA
DIM. A B C D E F G H I J K L M N R 1.65 15.2 2.29 0.71 0.065 3.56 4.7 1.02 3.68 13.51 5.26 0.76 3.05 2.54 16.5 0.598 0.090 0.028 3.81 0.140 mm. MIN. TYP 10.54 10.54 16.64 5.33 0.185 0.40 0.145 0.532 0.207 0.030 0.120 0.100 0.650 0.150 MAX. MIN. inch TYP. 0.415 0.415 0.655 0.210 MAX.
0117268C
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STRH10N25ESY3
Revision history
5
Revision history
Table 11.
Date 18-Dec-2006 26-Mar-2007
Revision history
Revision 1 2 First release Complete version Changes
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STRH10N25ESY3
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