N-channel Power MOSFET

www.DataSheet4U.com STB12NM50N - STD12NM50N STF12NM50N - STP12NM50N N-channel 500V - 0.29Ω - 11A - TO-220 /FP- D2PAK - DPAK Second generation MDmesh™ Power MOSFET General features Type STB12NM50N STD12NM50N STF12NM50N STP12NM50N ■ ■ ■ VDSS (@Tjmax) 550V 550V 550V 550V RDS(on) <0.38Ω <0.38Ω <0.38Ω <0.38Ω ID 11A 11A 11A (1) 11A 3 1 1 3 2 3 1 DPAK TO-220 100% avalanche tested Low input capacitance and gate charge Low gate input resistancel D²PAK 3 1 2 TO-220FP Description This series of devices is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters Internal schematic diagram Applications ■ Switching application Order codes Part number STB12NM50N STD12NM50N STF12NM50N STP12NM50N Marking B12NM50N D12NM50N F12NM50N P12NM50N Package D²PAK DPAK TO-220FP TO-220 Packaging Tape & reel Tape & reel Tube Tube November 2006 Rev 7 1/18 www.st.com 18 www.DataSheet4U.com Contents STB12NM50N - STD12NM50N - STF12NM50N - STP12NM50N Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 6 Test circuit ................................................ 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/18 www.DataSheet4U.com STB12NM50N - STD12NM50N - STF12NM50N - STP12NM50N Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VGS ID ID IDM(2) PTOT dv/dt(3) VISO TJ Tstg Absolute maximum ratings Value Parameter TO-220-D/D²PAK Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC=100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating factor Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25°C) Operating junction temperature Storage temperature -11 6.7 44 100 0.8 15 2500 500 ± 25 11(1) 6.7(1) 44 (1) 25 0.2 TO-220FP V V A A A W W/°C V/ns V Unit -55 to 150 °C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 11A, di/dt ≤ 400A/µs, VDD =80%V(BR)DSS Table 2. Symbol Thermal data Value Parameter TO-220 D²PAK Unit DPAK TO-220FP 5 100 300 62.5 °C/W °C/W °C Rthj-case Rthj-a Tl Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose 62.5 1.25 Table 3. Symbol IAS EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25°C, Id=Ias, Vdd=50V) Value 5 350 Unit A mJ 3/18 www.DataSheet4U.com Electrical characteristics STB12NM50N - STD12NM50N - STF12NM50N - STP12NM50N 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol V(BR)DSS dv/dt(1) IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Test conditions ID = 1mA, VGS= 0 Min 500 44 1 10 100 2 3 0.29 4 0.38 Typ. Max Unit V V/ns µA µA nA V Ω Peak diode recovery voltage Vdd=400V, Id=11A, slope Vgs=10V Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance VDS = Max rating, VDS = Max rating @125°C VGS = ±20V VDS= VGS, ID = 250µA VGS= 10V, ID= 5.5A 1. Characteristic value at turn off inductive load Table 5. Symbol gfs (1) Ciss Coss Crss Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Test conditions VDS =15V, ID = 5.5A VDS =25V, f=1 MHz, VGS=0 Min Typ. 8 880 230 30 130 30 6 15 Max Unit S pF pF pF pF nC nC nC Ω Coss eq(2). Equivalent output capacitance Qg Qgs Qgd Rg Total gate charge Gate-source charge Gate-drain charge VGS=0, VDS =0V to 400V VDD=400V, ID = 11A VGS =10V (see Figure 9) f=1MHz Gate DC Bias=0 test signal level=20mV open drain Gate input resistance 4.5 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS inceases from 0 to 80% VDSS 4/18 www.DataSheet4U.com STB12NM50N - STD12NM50N - STF12NM50N - STP12NM50N Electrical characteristics Table 6. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD=250 V, ID= 5.5A, RG=4.7Ω, VGS=10V (see Figure 15) Min Typ. 15 15 60 14 Max Unit ns ns ns ns Table 7. Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD=11A, VGS=0 ISD=11A, di/dt = 100A/µs, VDD=100V, Tj=25°C ISD=11A, di/dt = 100A/µs, VDD=100V, Tj=150°C 340 3.5 20 420 4 20 Test conditions Min Typ. Max 11 44 1.3 Unit A A V ns µC A ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 5/18 www.DataSheet4U.com Electrical characteristics STB12NM50N - STD12NM50N - STF12NM50N - STP12NM50N 2.1 Figure 1. Electrical characteristics (curves) Safe operating area for TO-220/ DPAK/ D²PAK Figure 2. Thermal impedance for TO-220/ DPAK/ D²PAK Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP Figure 5. Output characterisics Figure 6. Transfer characteristics 6/18 www.DataSheet4U.com STB12NM50N - STD12NM50N - STF12NM50N - STP12NM50N Figure 7. Transconductance Figure 8. Electrical characteristics Static drain-source on resistance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage vs temperature Figure 12. Normalized on resistance vs temperature 7/18 www.DataSheet4U.com Electrical characteristics STB12NM50N - STD12NM50N - STF12NM50N - STP12NM50N Figure 14. Normalized BVDSS vs temperature Figure 13. Source-drain diode forward characteristics 8/18 www.DataSheet4U.com STB12NM50N - STD12NM50N - STF12NM50N - STP12NM50N Test circuit 3 Test circuit Figure 16. Gate charge test circuit Figure 15. Switching times test circuit for resistive load Figure 17. Test circuit for inductive load Figure 18. Unclamped Inductive load test switching and diode recovery times circuit Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform 9/18 www.DataSheet4U.com Package mechanical data STB12NM50N - STD12NM50N - STF12NM50N - STP12NM50N 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/18 www.DataSheet4U.com STB12NM50N - STD12NM50N - STF12NM50N - STP12NM50N Package mechanical data TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 øP Q 11/18 www.DataSheet4U.com Package mechanical data STB12NM50N - STD12NM50N - STF12NM50N - STP12NM50N D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0º 4.88 15 1.27 1.4 2.4 0.4 4º 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch 3 1 12/18 www.DataSheet4U.com STB12NM50N - STD12NM50N - STF12NM50N - STP12NM50N Package mechanical data TO-252 (DPAK) MECHANICAL DATA mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0o 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 0.8 1.00 8o 0.024 0o TYP. MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 0.039 0o inch TYP. MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398 DIM. P032P_B 13/18 www.DataSheet4U.com Package mechanical data STB12NM50N - STD12NM50N - STF12NM50N - STP12NM50N TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Ø A B L3 L6 L7 F1 F D G1 H F2 L2 L5 E 123 L4 14/18 G www.DataSheet4U.com STB12NM50N - STD12NM50N -