N-CHANNEL MOSFET

www.DataSheet4U.com STN1HNC60 N-CHANNEL 600V - 7Ω - 0.4A - SOT-223 PowerMesh™II MOSFET TYPE STN1HNC60 s s s s s VDSS 600 V RDS(on) <8Ω ID 0.4 A TYPICAL RDS(on) = 7Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 2 1 SOT-223 2 3 DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS AC ADAPTORS AND BATTERY CHARGERS s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (1) Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 600 600 ±30 0.4 0.25 1.6 2.5 0.02 3.5 –65 to 150 150 (1)ISD ≤0.4A, di/dt ≤100A/µs, VDD ≤ V (BR)DSS, Tj ≤ T JMAX Unit V V V A A A W W/°C V/ns °C °C 1/8 PTOT dv/dt Tstg Tj May 2001 (•)Pulse width limited by safe operating area STN1HNC60 THERMAL DATA Rthj-pcb Rthj-amb Tl Thermal Resistance Junction-PC Board Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 50 60 300 °C/W °C/W °C AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 0.4 100 Unit A mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ±30V Min. 600 1 50 ±100 Typ. Max. Unit V µA µA nA ON (1) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250µA VGS = 10V, ID =0.7 A Min. 2 Typ. 3 7 Max. 4 8 Unit V Ω DYNAMIC Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > ID(on) x RDS(on)max, ID = 0.7A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 1.25 160 26 3.8 Max. Unit S pF pF pF 2/8 STN1HNC60 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 300V, ID = 0.7A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) VDD = 480V, ID = 1.4A, VGS = 10V Min. Typ. 8 8 8.5 2.8 2.8 11.5 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 480V, ID = 1.4A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Min. Typ. 25 9 34 Max. Unit ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 0.4 A, VGS = 0 ISD = 1.4A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5) 500 950 3.8 Test Conditions Min. Typ. Max. 0.4 1.6 1.6 Unit A A V ns nC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/8 STN1HNC60 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STN1HNC60 Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STN1HNC60 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STN1HNC60 SOT-223 MECHANICAL DATA mm MIN. A B B1 c D e e1 E H V A1 0.02 3.30 6.70 0.60 2.90 0.24 6.30 0.70 3.00 0.26 6.50 2.30 4.60 3.50 7.00 3.70 7.30 10o 0.130 0.264 TYP. MAX. 1.80 0.80 3.10 0.32 6.70 0.024 0.114 0.009 0.248 0.027 0.118 0.010 0.256 0.090 0.181 0.138 0.276 0.146 0.287 10o MIN. inch TYP. MAX. 0.071 0.031 0.122 0.013 0.264 DIM. P008B 7/8 STN1HNC60 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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