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SemiWell Semiconductor Bi-Directional Triode Thyristor
STN1A60/80
Symbol
Features
Repetitive Peak Off-State Voltage : 600/800V R.M.S On-State Current ( IT(RMS)= 1 A ) ◆ High Commutation dv/dt
◆ ◆
○
3.T2
▼ ▲
○
2.Gate
1.T1
○
General Description
This device is suitable for low power AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay.
TO-92
1 2 3
Absolute Maximum Ratings
Symbol VDRM IT(RMS) ITSM I2t PGM PG(AV) IGM VGM TJ TSTG Parameter
( TJ = 25°C unless otherwise specified ) Condition Ratings 600 TC = 58 °C One Cycle, 50Hz/60Hz, Peak, Non-Repetitive 1.0 9.1/10 0.41 1.0 0.1 0.5 6.0 - 40 ~ 125 - 40 ~ 150 0.2 800 Units V A A A2s W W A V °C °C g
Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current I2t Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Operating Junction Temperature Storage Temperature Mass
Apr, 2003. Rev. 3
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
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STN1A60/80
Electrical Characteristics
Symbol Items Conditions VD = VDRM, Single Phase, Half Wave TJ = 125 °C IT = 1.5 A, Inst. Measurement Ratings Min. Typ. Max. Unit
IDRM VTM I+GT1 I -GT1 I -GT3 I+GT3 V+GT1 V-GT1 V-GT3 V+GT3 VGD (dv/dt)c IH Rth(j-c) Rth(j-a)
Repetitive Peak Off-State Current Peak On-State Voltage I II Gate Trigger Current III IV I II Gate Trigger Voltage III IV Non-Trigger Gate Voltage Critical Rate of Rise OffState Voltage at Commutation Holding Current Thermal Resistance Thermal Resistance
-
-
0.5
mA
-
7 -
1.6 5 5
V
VD = 6 V, RL=10 Ω VD = 6 V, RL=10 Ω TJ = 125 °C, VD = 1/2 VDRM TJ = 125 °C, [di/dt]c = -0.5 A/ms, VD=2/3 VDRM 0.2 1.8 2.0 5 12 1.8 1.8
mA
V
V
2.0
-
-
V/㎲ mA °C/W °C/W
Junction to case Junction to Ambient -
4.0 -
50 120
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STN1A60/80
Fig 1. Gate Characteristics
10
1
Fig 2. On-State Voltage
10
1
VGM (6V)
25 ℃
10
0
PG(AV) (0.1W) IGM (0.5A)
25 ℃ I I I
+ GT1 _ GT1 _ GT3
I
+ GT3
On-State Current [A]
Gate Voltage [V]
PGM (1W)
TJ = 125 C
10
0
o
TJ = 25 C
o
VGD(0.2V)
10
-1
10
0
10
1
10
2
10
3
10
-1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Gate Current [mA]
On-State Voltage [V]
Fig 3. On State Current vs. Maximum Power Dissipation
1.5
Fig 4. On State Current vs. Allowable Case Temperature
θ = 180o θ = 150 o θ = 120 o θ = 90 θ = 60 θ = 30
o o o
Allowable Case Temperature [ oC]
130 120 110 100 90 80 70 60 50 40 0.0
Power Dissipation [W]
1.2
π θ
360°
θ
2π
0.9
θ : Conduction Angle
0.6
π θ
360°
θ
2π
0.3
θ : Conduction Angle
θ θ θ θ θ θ
= 30 o = 60 o = 90 o = 120o = 150 o = 180
o
0.0 0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.2
0.4
0.6
0.8
1.0
1.2
RMS On-State Current [A]
RMS On-State Current [A]
Fig 5. Surge On-State Current Rating ( Non-Repetitive )
12
10
Fig 6. Gate Trigger Voltage vs. Junction Temperature
10
Surge On-State Current [A]
V
+ GT1 _ GT1 + GT3 _ GT3
8
60Hz
VGT (25 C) VGT (t C)
o o
V V
1
V
6
4
50Hz
2
0 0 10
10
1
10
2
0.1 -50
0
50
100
o
150
Time (cycles)
Junction Temperature [ C]
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STN1A60/80
Fig 7. Gate Trigger Current vs. Junction Temperature
10
1000
Fig 8. Transient Thermal Impedance
Transient Thermal Impedance [ C/W]
Rθ (J-A)
100
I
IGT (25 C)
IGT (t oC)
I
1
I
+ GT1 _ GT1 _ GT3
o
o
Rθ (J-C)
10
I
+ GT3
0.1 -50
0
50
100
o
150
1 -2 10
10
-1
10
0
10
1
10
2
10
3
Junction Temperature [ C]
Time (sec)
Fig 9. Gate Trigger Characteristics Test Circuit
10Ω
10Ω
10Ω
10Ω
▼ ▲
6V
●
▼ ▲
A 6V
●
▼ ▲
A 6V
●
A
▼ ▲
RG
6V
●
A
V
●
RG
V
●
RG
V
●
V
●
RG
Test Procedure Ⅰ
Test Procedure Ⅱ
Test Procedure Ⅲ
Test Procedure Ⅳ
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STN1A60/80
TO-92 Package Dimension
mm Dim. Min. A B C D E F G H I J 0.33 2.54 2.54 0.48 0.013 4.43 4.43 14.07 Typ. 4.2 3.7 4.83 14.87 0.4 4.83 0.45 0.174 0.174 0.554 Max. Min.
Inch Typ. 0.165 0.146 0.190 0.585 0.016 0.190 0.017 0.100 0.100 0.019 Max.
A
E
B F
C
G 1 D 2 3
1. T1 2. Gate 3. T2
J
H
I
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STN1A60/80
TO-92 Package Dimension, Forming
Dim. A B C D E F G H I J K L M N
mm Min. Typ. 4.2 3.7 4.43 14.07 4.43 2.54 2.54 0.33 4.5 7.8 1.8 1.3 0.48 5.5 8.2 2.2 1.7 0.013 0.177 0.295 0.070 0.051 4.83 14.87 0.4 4.83 0.45 0.174 0.174 0.554 Max. Min.
Inch Typ. 0.165 0.146 0.190 0.585 0.016 0.190 0.017 0.100 0.100 0.019 0.216 0.323 0.086 0.067 Max.
A E B
F
C
N
M G D 1 2 3 L
1. T1 2. Gate 3. T2
K H I J
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