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Semiconductor
STK0160D
Advanced Power MOSFET
SWITCHING REGULATOR APPLICATIONS Features
• • • • High Voltage: BVDSS=600V(Min.) Low Crss : Crss=4.3pF(Typ.) Low gate charge : Qg=4.5nC(Typ.) Low RDS(on) :RDS(on)=9.4Ω(Max.)
Type NO. STK0160D Marking STK0160 Package Code D-PAK
Ordering Information
Outline Dimensions
unit : mm
6.50~6.70 5.10~5.50
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1.18 Max.
2.10~2.50
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7.77~7.97
1.15 Max.
0.83 Max. 2.30 Typ. 2.30 Typ.
0.55 Max.
1
2
3
PIN Connections 1. Gate 2. Drain 3. Source
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STK0160D
Absolute maximum ratings
Characteristic
Drain-source voltage Gate-source voltage Drain current (DC) Drain current (Pulsed)
*
(Tc=25°C)
Symbol
VDSS VGSS ID (Tc=25℃) (Tc=125℃) IDP PD ② ② ① ① IAS EAS IAR EAR TJ Tstg
Rating
600 ±30 1.0 0.70 4.0 28 1.0 22 1.0 2.5 150 -55~150
Unit
V V A A A W A mJ A mJ °C
Drain Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range
* Limited by maximum junction temperature
Characteristic
Junction-case Junction-ambient
Symbol
Rth(J-C) DataSheet4U.com Rth(J-a)
Typ.
-
Max
4.46 83.3
Unit
℃/W
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STK0160D
Electrical Characteristics
Characteristic
Drain-source breakdown voltage Gate-threshold voltage Drain-source leakage current Gate-source leakage Drain-Source on-resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ④ ④
(Tc=25°C)
Symbol
BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd
Test Condition
ID=250µA, VGS=0 ID=250µA, VDS= VGS VDS=600V, VGS=0V VDS=0V, VGS=±30V VGS=10V, ID=0.5A VDS=10V, ID=0.5A VGS=0V, VDS=25V, f=1MHz
Min.
600 2.0 -
Typ.
8.8 0.95 150 20 4.3 22.5 27 11.5 27 4.5 0.9 1.3
Max.
4.0 1 ±100 9.4 225 30 6.4 6.7 1.3 1.9
Unit
V V µA nA Ω S pF
VDD=300V, VGS=10V ID=1.0A, RG=25Ω
-
③④
-
ns
VDD=300V, VGS=10V ID=1.0A
-
nC
③④
-
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Source-Drain Diode Ratings and Characteristics
Characteristic
Continuous source current Source current (Pulsed) Forward voltage Reverse recovery time Reverse recovery charge ① ④
DataShee
(Tc=25°C)
Symbol
IS ISM VSD trr Qrr
Test Condition
Integral reverse diode in the MOSFET VGS=0V, IS=1.0A Is=1.0A, VGS=0V dis/dt=100A/us
Min
-
Typ
160 0.59
Max
1.0 4.0 1.4 -
Unit
A V ns uC
Note ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② L=20mH, IAS=1.0A, VDD=50V, RG=25Ω ③ Pulse Test : Pulse Width< 300us, Duty cycle≤ 2% ④ Essentially independent of operating temperature
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STK0160D
Electrical Characteristic Curves
Fig. 1 ID - VDS Fig. 2 ID - VGS
:
-
Fig. 3 RDS(on) - ID
Fig. 4 IS - VSD
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Fig. 5 Capacitance - VDS
Fig. 6 VGS - QG
℃
=
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STK0160D
Fig. 7 VDSS - TJ Fig. 8 RDS(on) - TJ
ㅋ
C
C
Fig. 9
ID - TC
Fig. 10 Safe Operating Area
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*
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STK0160D
Fig. 11 Gate Charge Test Circuit & Waveform
Fig. 12 Resistive Switching Test Circuit & Waveform
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Fig. 13 EAS Test Circuit & Waveform
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STK0160D
Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform
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STK0160D
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The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice.
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