N-CHANNEL 50A - 600V MAX247 PowerMESH IGBT

® STGY50NB60HD N-CHANNEL 50A - 600V MAX247 PowerMESH™ IGBT PRELIMINARY DATA T YPE STGY50NB60HD s V CES 600 V V CE(sat) < 2.8 V IC 50 A s s s s s s HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (VCESAT) LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION OFF LOSSES INCLUDE TAIL CURRENT CO-PACKAGED WITH TURBOSWITCH™ ANTIPARALLEL DIODE MAX247 1 2 3 DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix ”H” identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz). APPLICATIONS s HIGH FREQUENCY MOTOR CONTROLS s WELDING EQUIPMENTS s SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V GE IC IC I CM (•) P tot T s tg Tj Parameter Collector-Emitter Voltage (VGS = 0) G ate-Emitter Voltage Collector Current (continuous) at Tc = 25 C Collector Current (continuous) at Tc = 100 C Collector Current (pulsed) T otal Dissipation at Tc = 25 oC Derating Factor Storage T emperature Max. Operating Junction Temperature o o Value 600 ± 20 100 50 400 250 2 -65 to 150 150 Unit V V A A A W W /o C o o C C (•) Pulse width limited by safe operating area June 1999 1/6 STGY50NB60HD THERMAL DATA R thj -case R thj -amb R thc-h Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-heatsink Max Max Typ 0.5 30 0.1 C/W oC/W o C/W o ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified) OFF Symbol V BR(CES) I CES IGES Parameter Collector-Emitt er Breakdown Voltage Collector cut-off (V GE = 0) Gate-Emitter Leakage Current (VCE = 0) Test Conditions I C = 250 µA V GE = 0 T j = 25 oC T j = 125 o C V CE = 0 Min. 600 100 1000 ± 100 Typ. Max. Unit V µA µA nA V CE = Max Rating V CE = Max Rating V GE = ± 20 V ON (∗) Symbol V GE(th) V CE(SAT ) Parameter Gate Threshold Voltage Collector-Emitt er Saturation Voltage V CE = V GE V GE = 15 V V GE = 15 V Test Conditions IC = 250 µA IC = 50 A IC = 50 A Min. 3 2.3 1.9 Typ. Max. 5 2.8 Unit V V V Tj = 125 oC DYNAMIC Symbol gf s C i es C o es C res QG Q GE Q GC I CL Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total G ate Charge Gate-Emitter Charge Gate-Collector Charge Latching Current V CE =25 V V CE = 25 V Test Conditions I C = 50 A f = 1 MHz V GE = 0 Min. Typ. 22 4500 450 90 260 28 15 200 Max. Unit S pF pF pF nC nC nC A V CE = 480 V IC = 50 A VGE = 15 V V clamp = 480 V T j = 150 o C R G =10 Ω SWITCHING ON Symbol t d(on) tr (di/dt) on Eo n (r) Parameter Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Test Conditions V CC = 480 V V GE = 15 V V CC = 480 V R G = 10 Ω T j = 125 o C I C = 50 A R G = 10Ω I C = 50 A V GE = 15 V Min. Typ. 20 70 350 950 Max. Unit ns ns A/µs µJ 2/6 STGY50NB60HD ELECTRICAL CHARACTERISTICS (continued) SWITCHING OFF Symbol tc t r (v off ) td (o ff ) tf E o ff(**) E ts(r) tc t r (v off ) td (o ff ) tf E o ff(**) E ts(r) Parameter Test Conditions I C = 50 A V GE = 15 V Min. Typ. 166 48 326 90 2.1 3 270 75 340 200 2.9 3.85 Max. Unit ns ns ns ns mJ mJ ns ns ns ns mJ mJ Cross-O ver Time V CC = 480 V Off Voltage Rise Time R GE = 10 Ω Delay Time Fall T ime Turn-off Switching Loss Total Switching Loss Cross-O ver Time V CC = 480 V Off Voltage Rise Time R GE = 10 Ω Delay Time T j = 125 o C Fall T ime Turn-off Switching Loss Total Switching Loss I C = 50 A V GE = 15 V COLLECTOR-EMITTER DIODE Symbol If I fm Vf t rr Q rr I rrm Parameter Forward Current Forward Current pulsed Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current If = 50 A If = 50 A If = 50 A dI/dt = 100 A/µS T j = 125 oC V R = 200 V o T j = 125 C 2 200 T est Conditions Min. T yp. Max. 50 400 Unit A A V V nS nC A (•) Pulse width limited by max. junction temperature (r) Include recovery losses on the STTA2006 freewheeling diode (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (**)Losses Include Also The Tail (Jedec Standardization) 3/6 STGY50NB60HD Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching Fig. 3: Switching Waveforms 4/6 STGY50NB60HD Max247 MECHANICAL DATA mm MIN. A A1 b b1 b2 c D e E L L1 4.70 2.20 1.00 2.00 3.00 0.40 19.70 5.35 15.30 14.20 3.70 TYP. MAX. 5.30 2.60 1.40 2.40 3.40 0.80 20.30 5.55 15.90 15.20 4.30 MIN. inch TYP. MAX. DIM. P025Q 5/6 STGY50NB60HD Information furnished is believed to be accurate and reliable. However, STMicroelect onics assumes no responsibil ity for the consequences r of use of such information nor for any infringement of patents or other rights of third partes which may result from its use. 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