N-CHANNEL 50A - 600V TO-247 Hyper Fast PowerMESH IGBT

STGW40NC60V N-CHANNEL 50A - 600V TO-247 Hyper Fast PowerMESH™ IGBT TYPE STGW40NC60V s s s s s s VCES 600 V VCE(sat) (Max)@25°C < 2.5 V IC @100°C 50 A HIGH INPUT IMPEDANCE OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION CO-PACKAGED WITH TURBOSWITCH ANTIPARALLEL DIODE 3 2 1 TO-247 DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “V” identifies a family optimized for high frequency welding and SMPS applications. APPLICATIONS s HIGH FREQUENCY INVERTERS s SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES s UPS s WELDING INTERNAL SCHEMATIC DIAGRAM ORDERING INFORMATION SALES TYPE STGW40NC60V MARKING GW40NC60V PACKAGE TO-247 PACKAGING TUBE August 2003 1/9 STGW40NC60V ABSOLUTE MAXIMUM RATINGS Symbol VCES VECR VGE IC IC ICM ( ) PTOT Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage Gate-Emitter Voltage Collector Current (continuous) at TC = 25°C Collector Current (continuous) at TC = 100°C Collector Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Storage Temperature Max. Operating Junction Temperature Value 600 20 ± 20 80 50 220 260 2.6 – 55 to 125 125 Unit V V V A A A W W/°C °C °C ( )Pulse width limited by safe operating area THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 0.385 30 °C/W °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol VBR(CES) ICES IGES Parameter Collector-Emitter Breakdown Voltage Collector cut-off (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Test Conditions IC = 1 mA, VGE = 0 VCE = Max Rating, TC = 25 °C VCE = Max Rating, TC = 125 °C VGE = ±20 V , VCE = 0 Min. 600 250 1000 ±250 Typ. Max. Unit V µA µA nA ON (1) Symbol VGE(th) VCE(sat) Parameter Gate Threshold Voltage Collector-Emitter Saturation Voltage Test Conditions VCE = VGE, IC = 250 µA VGE = 15 V, IC = 40 A, Tj =25°C VGE =15 V, IC = 40 A, Tj =125°C Min. 3 Typ. 4 1.92 1.7 Max. 5 2.5 Unit V V V 2/9 STGW40NC60V ELECTRICAL CHARACTERISTICS (CONTINUED) DYNAMIC Symbol gfs Cies Coes Cres Qg Qge Qgc ICL Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Latching Current VCE = 480 V, IC = 40 A, VGE = 15 V Vclamp = 480 V , Tj = 125°C RG = 10 Ω 220 Test Conditions VCE = 25 V , IC = 20 A VCE = 25 V, f= 1 MHz, VGE = 0 Min. Typ. 20 4550 350 105 220 30 105 Max. Unit S pF pF pF nC nC nC A SWITCHING ON Symbol td(on) tr (di/dt)on Eon Parameter Turn-on Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Test Conditions VCC = 480 V, IC = 40 A RG = 10Ω , VGE = 15 V VCC= 480 V, IC = 40 A RG= 10 Ω, VGE = 15 V, Tj =125°C Min. Typ. 45 27 1150 800 Max. Unit ns ns A/µs µJ SWITCHING OFF Symbol tr(Voff) td(off) tf Eoff(**) Ets tr(Voff) td(off) tf Eoff(**) Ets Parameter Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Total Switching Loss Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Total Switching Loss Vcc = 480 V, IC = 40 A, RGE = 10 Ω , VGE = 15 V Tj = 125 °C Test Conditions Vcc = 480 V, IC = 40 A, RGE = 10 Ω , VGE = 15 V TJ = 25 °C Min. Typ. 37 270 70 1120 1880 67 325 120 1600 2400 Max. Unit ns ns ns µJ µJ ns ns ns µJ µJ Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. (**)Losses include Also the Tail (Jedec Standardization) 3/9 STGW40NC60V Output Characteristics Transfer Characteristics Transconductance Normalized Collector-Emitter On Voltage vs Temp. Collector-Emitter On Voltage vs Collector Current Gate Threshold vs Temperature 4/9 STGW40NC60V Normalized Breakdown Voltage vs Temperature Capacitance Variations Gate Charge vs Gate-Emitter Voltage Total Switching Losses vs Gate Resistance Total Switching Losses vs Temperature Total Switching Losses vs Collector Current 5/9 STGW40NC60V Thermal Impedance for Max247 Turn-Off SOA 6/9 STGW40NC60V Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching 7/9 STGW40NC60V TO-247 MECHANICAL DATA mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620 DIM. A A1 b b1 b2 c D E e L L1 L2 øP øR S 8/9 STGW40NC60V Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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