STGE50NC60WD (STMicroelectronics) - N-channel 50A - 600V - ISOTOP Ultra fast switching PowerMESHTM IGBT (STGE50NC60WD.pdf)

STMicroelectronics

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www.DataSheet4U.com STGE50NC60WD N-channel 50A - 600V - ISOTOP Ultra fast switching PowerMESH™ IGBT Features Type STGE50NC60WD ■ ■ ■ ■ VCES 600V VCE(sat) (Max) IC @25°C @100°C 2.5V 50A High current capability High frequency operation Low CRES/CIES ratio (no cross-conduction susceptibility Very soft ultra fast recovery antiparallel diode ISOTOP Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “W” identifies a family optimized for very high frequency applications. Figure 1. Internal schematic diagram Applications ■ ■ ■ ■ ■ Very high frequency inverters HF, SMPS and PFC in both hard switching and resonant topologies UPS Motor drivers Welding Table 1. Device summary Order code Marking GE50NC60WD Package ISOTOP Packaging Tube STGE50NC60WD July 2007 Rev 2 1/14 www.st.com 14 www.DataSheet4U.com Contents STGE50NC60WD Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 7 3 4 5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 www.DataSheet4U.com STGE50NC60WD Electrical ratings 1 Table 2. Symbol VCES IC (1) IC (1) ICL (2) VGE IF PTOT Tstg Tj Electrical ratings Absolute maximum ratings Parameter Collector-emitter voltagesGS = 0) Collector current (continuous) at TC = 25°C Collector current (continuous) at TC = 100°C Collector current (pulsed) Gate-emitter voltage Diode RMS forward current at Tc=25°C Total dissipation at TC = 25°C Storage temperature -55 to 150 Operating junction temperature T –T JMAX C I ( T ) = ----------------------------------------------------------------------------------------------------CC R ×V (T , I ) THJ – C CESAT ( MAX ) C C Value 600 100 50 250 ± 20 30 260 Unit V A A A V A W °C 1. Calculated according to the iterative formula: 2. Pulse width limited by Tjmax Table 3. Symbol Rthj-case Rthj-case Rthj-amb Thermal resistance Parameter Thermal resistance junction-case (IGBT) Thermal resistance junction-case (diode) Thermal resistance junction-amb Min ---Typ ---Max 0.48 1.5 50 Unit °C/W °C/W °C/W 3/14 www.DataSheet4U.com Electrical characteristics STGE50NC60WD 2 Electrical characteristics (TJ = 25 °C unless otherwise specified) Table 4. Symbol VBR(CES) VCE(sat) VGE(th) ICES IGES gfs Static Parameter Collector-emitter breakdown voltage Test conditions IC= 1mA, VGE= 0 Min. 600 2.1 1.9 3.75 2.6 Typ. Max. Unit V V V V µA mA nA S Collector-emitter saturation VGE= 15V, IC= 40A voltage VGE= 15V, IC=40A,Tc=125°C Gate threshold voltage Collector cut-off current (VGE = 0) Gate-emitter leakage current (VCE = 0) Forward transconductance VCE= VGE, IC= 250 µA VCE= Max rating,TC= 25°C VCE= Max rating,TC= 125°C VGE= ±20V, VCE= 0 VCE = 15V, IC= 40A 5.75 500 5 ±100 25 Table 5. Symbol Cies Coes Cres Qg Qge Qgc Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test conditions VCE = 25V, f = 1MHz, VGE = 0 VCE = 390V, IC = 40A, VGE = 15V, Figure 17 Min. Typ. 4700 410 90 195 32 82 Max. Unit pF pF pF nC nC nC 4/14 www.DataSheet4U.com STGE50NC60WD Electrical characteristics Table 6. Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(Voff) tf tr(Voff) td(Voff) tf Switching on/off (inductive load) Parameter Turn-on delay time Current rise time Turn-on current slope Turn-on delay time Current rise time Turn-on current slope Off voltage rise time Turn-off delay time Current fall time Off voltage rise time Turn-off delay time Current fall time Test conditions VCC = 390V, IC = 40A , RG= 3.3Ω VGE= 15V, Figure 16, Figure 18 VCC = 390V, IC = 40A , RG= 3.3Ω VGE= 15V, Tj = 125°C Figure 16, Figure 18 VCC = 390V, IC = 40A RG= 3.3Ω VGE= 15V, , Figure 16, Figure 18 VCC = 390V, IC = 40A , RG= 3.3Ω VGE= 15V, Tj = 125°C Figure 16, Figure 18 Min. Typ. 52 17 2400 50 19 2020 31 240 35 59 280 63 Max. Unit ns ns A/µs ns ns A/µs ns ns ns ns ns ns Table 7. Symbol Eon(1) Eoff(2) Ets Eon(1) Eoff(2) Ets Switching energy (inductive load) Parameter Turn-on switching losses Turn-off switching losses Total switching losses Turn-on switching losses Turn-off switching losses Total switching losses Test conditions VCC = 390V, IC = 40A , RG= 3.3Ω VGE= 15V, Figure 18 VCC = 390V, IC = 40A RG= 3.3Ω VGE= 15V, , Tj = 125°C Figure 18 Min. Typ. 365 560 925 635 910 1545 Max. 470 790 1260 Unit µJ µJ µJ µJ µJ µJ 1. Eon is the tun-on losses when a typical diode is used in the test circuit in Figure 18 If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C) 2. Turn-off losses include also the tail of the collector current 5/14 www.DataSheet4U.com Electrical characteristics STGE50NC60WD Table 8. Symbol Collector-emitter diode Parameter Test conditions If = 15A Min. Typ. 1.5 1.2 1.35 55 100 3.6 164 525 6.4 Max. 2.9 Unit V V V ns nC A ns nC A Vf Forward on-voltage If = 15A, Tj = 125°C If = 40A, Tj = 125°C trr Qrr Irrm trr Qrr Irrm Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current If = 40A,VR = 50V, Tj = 25°C, di/dt = 100 A/µs Figure 19 If = 40A,VR = 50V, Tj =125°C, di/dt = 100A/µs Figure 19 6/14 www.DataSheet4U.com STGE50NC60WD Electrical characteristics 2.1 Figure 2. Electrical characteristics (curves) Output characteristics Figure 3. Transfer characteristics Figure 4. Transconductance Figure 5. Collector-emitter on voltage vs temperature Figure 6. Gate charge vs gate-source voltage Figure 7. Capacitance variations 7/14 www.DataSheet4U.com Electrical characteristics Figure 8. Normalized gate threshold voltage vs temperature Figure 9. STGE50NC60WD Collector-emitter on voltage vs collector current Figure 10. Normalized breakdown voltage vs temperature Figure 11. Switching losses vs temperature Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector current 8/14 www.DataSheet4U.com STGE50NC60WD Figure 14. Turn-off SOA Electrical characteristics Figure 15. Emitter-collector diode characteristics 9/14 www.DataSheet4U.com Test circuit STGE50NC60WD 3 Test circuit Figure 17. Gate charge test circuit Figure 16. Test circuit for inductive load switching Figure 18. Switching waveform Figure 19. Diode recovery time waveform 10/14 www.DataSheet4U.com STGE50NC60WD Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 11/14 www.DataSheet4U.com Package mechanical data STGE50NC60WD ISOTOP MECHANICAL DATA DIM. MIN. A B C D E F G H J K L M N O 11.8 8.9 1.95 0.75 12.6 25.15 31.5 4 4.1 14.9 30.1 37.8 4 7.8 8.2 4.3 15.1 30.3 38.2 mm TYP. MAX. 12.2 9.1 2.05 0.85 12.8 25.5 31.7 MIN. 0.466 0.350 0.076 0.029 0.496 0.990 1.240 0.157 0.161 0.586 1.185 1.488 0.157 0.307 0.322 0.169 0.594 1.193 1.503 inch TYP. MAX. 0.480 0.358 0.080 0.033 0.503 1.003 1.248 G O B A N D E F J K L M H C 12/14 www.DataSheet4U.com STGE50NC60WD Revision History 5 Table 9. Date Revision History Revision history Revision 1 2 First release New Figure 1: Internal schematic diagram Changes 07-May-2006 24-Jul-2007 13/14 www.DataSheet4U.com STGE50NC60WD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, A

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