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Part Number |
STGB6NC60H |
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Manufacturer |
ST Microelectronics |
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Semiconductor DataSheet |
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STGB6NC60H
N-channel 600V - 7A - D2PAK Very fast PowerMESH™ IGBT
General features
Type STGB6NC60H
■ ■ ■ ■
VCES 600V
VCE(sat)max @25°C <2.5V
IC @100°C 7A
Low on voltage drop (Vcesat) Low CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode High frequency operation
3 1
D²PAK
Description
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advaced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “H” identifies a family optimized for high frequency application in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.
Internal schematic diagram
Applications
■ ■ ■
High frequency inverters SMPS and PFC in both hard switch and resonant topologies Motor drivers
Order codes
Part number STGB6NC60HT4 Marking GB6NC60H Package D²PAK Packaging Tape & reel
July 2006
Rev 2
1/14
www.st.com 14
Contents
STGB6NC60H
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 4 5 6
Test circuit
................................................ 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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STGB6NC60H
Electrical ratings
1
Electrical ratings
Table 1.
Symbol VCES IC(1) IC(1) ICM(2) VGE PTOT Tstg Tj Tl
Absolute maximum ratings
Parameter Collector-emitter voltage (VGS = 0) Collector current (continuous) at TC = 25°C Collector current (continuous) at TC = 100°C Collector current (pulsed) Gate-emitter voltage Total dissipation at TC = 25°C Storage temperature Operating junction temperature Maximum lead temperature for soldering purpose (for 10sec. 1.6 mm from case)
T –T JMAX C I ( T ) = ----------------------------------------------------------------------------------------------------CC R ×V (T , I ) THJ – C CESAT ( MAX ) C C
Value 600 15 7 21 ±20 56 – 55 to 150
Unit V A A A V W °C
300
°C
1. Calculated according to the iterative formula::
2. Pulse width limited by max junction temperature
Table 2.
Symbol Rthj-case Rthj-amb
Thermal resistance
Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max Value 2 62.5 Unit °C/W °C/W
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Electrical characteristics
STGB6NC60H
2
Electrical characteristics
(TCASE=25°C unless otherwise specified) Table 3.
Symbol VBR(CES) VCE(sat) VGE(th) ICES IGES gfs
Static
Parameter Collector-emitter breakdown voltage Test conditions IC = 1mA, VGE = 0 Min. 600 1.9 1.7 3.75 2.5 Typ. Max. Unit V V V V µA mA nA S
Collector-emitter saturation VGE = 15V, IC= 3A voltage VGE= 15V, IC= 3A, Tc= 125°C Gate threshold voltage Collector cut-off current (VGE = 0) Gate-emitter leakage current (VCE = 0) Forward transconductance VCE= VGE, IC= 250 µA VCE = Max rating,TC= 25°C VCE = Max rating,TC= 125°C VGE = ±20V , VCE= 0 VCE = 15V, IC= 3A
5.75 10 1 ±100 3
Table 4.
Symbol Cies Coes Cres Qg Qge Qgc ICL
Dynamic
Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Turn-off SOA minimum current Test conditions VCE = 25V, f = 1MHz, VGE = 0 VCE = 390V, IC = 3A, VGE = 15V, (see Figure 16) Vclamp = 390V, Tj = 150°C, , RG = 10Ω VGE = 15V Min. Typ. Max. 205 32 5.5 13.6 3.4 5.1 19 Unit pF pF pF nC nC nC A
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STGB6NC60H
Electrical characteristics
Table 5.
Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf
Switching on/off (inductive load)
Parameter Turn-on delay time Current rise time Turn-on current slope Turn-on delay time Current rise time Turn-on current slope Off voltage rise time Turn-off delay time Current fall time Off voltage rise time Turn-off delay time Current fall time Test conditions VCC = 390V, IC = 3A , RG= 10Ω VGE = 15V, Tj = 25°C (see Figure 17) VCC = 390V, IC = 3A , RG = 10Ω VGE = 15V, Tj =125°C (see Figure 17) VCC = 390V, IC = 3A, RGE = 10Ω , VGE = 15V, TJ = 25°C (see Figure 17) VCC = 390V, IC = 3A, RGE = 10Ω , VGE =15V, Tj = 125°C (see Figure 17) Min. Typ. 12 5 612 13 4.3 560 40 76 100 60 98 124 Max. Unit ns ns A/µs ns ns A/µs ns ns ns ns ns ns
Table 6.
Symbol Eon(1) Eoff(2) Ets Eon(1) Eoff(2) Ets
Switching energy (inductive load)
Parameter Turn-on switching losses Turn-off switching losses Total switching losses Turn-on switching losses Turn-off switching losses Total switching losses Test condictions VCC = 390V, IC = 3A , RG = 10Ω VGE=15V, Tj =25°C (see Figure 17) VCC = 390V, IC = 3A , RG = 10Ω VGE = 15V, Tj = 125°C (see Figure 17) Min. Typ. 20 68 88 37 93 130 Max. Unit µJ µJ µJ µJ µJ µJ
1. Eon is the tun-on losses when a typical diode is used in the test circuit in figure 17. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C) 2. Turn-off losses include also the tail of the collector current
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Electrical characteristics
STGB6NC60H
2.1
Figure 1.
Electrical characteristics (curves)
Output characterisics Figure 2. Transfer characteristics
Figure 3.
Transconductance
Figure 4.
Collector-emitter on voltage vs temperature
Figure 5.
Gate charge vs gate-source voltage Figure 6.
Capacitance variations
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STGB6NC60H Figure 7. Normalized gate threshold voltage vs temperature Figure 8.
Electrical characteristics Collector-emitter on voltage vs collector current
Figure 9.
Normalized breakdown voltage vs temperature
Figure 10. Switching losses vs temperature
Figure 11. Switching losses vs gate resistance Figure 12. Switching losses vs collector current
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Electrical characteristics Figure 13. Thermal impedance Figure 14. Turn-off SOA
STGB6NC60H
8/14
STGB6NC60H
Test circuit
3
Test circuit
Figure 16. Gate charge test circuit
Figure 15. Test circuit for inductive load switching
Figure 17. Switching waveform
Figure 18. Diode recovery time waveform
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Package mechanical data
STGB6NC60H
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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STGB6NC60H
Package mechanical data
D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA
mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0º 4.88 15 1.27 1.4 2.4 0.4 4º 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch
3
1
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Packaging mechanical data
STGB6NC60H
5
Packaging mechanical data
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956
BASE QTY 1000
* on sales type
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STGB6NC60H
Revision history
6
Revision history
Table 7.
Date 18-Nov-2005 27-jul-2006
Revision history
Revision 1 2 First Release New template Changes
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STGB6NC60H
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