N-CHANNEL IGBT

www.DataSheet4U.com STGB6NB60HD N-CHANNEL 6A - 600V - D2PAK Low Drop PowerMESH™ IGBT PRELIMINARY DATA General features Type STGB6NB60HD ■ VCES 600V VCE(sat) (Max)@ 25°C < 2.7V IC @100°C 6A LOWER CRES / CIES RATIO (NO CROSS CONDUCTION SUSCEPTIBILITY) HIGH FREQUENCY OPERATION VERY SOFT ULTRA FAST RECOVERY ANTI PARALLEL DIODE TYPICAL SHORT CIRCUIT WITHSTAND TIME 5MICROS S-family, 4micro H-family CO-PACKAGE WITH TURBOSWITCH™ ANTIPARALLEL DIODE 3 1 ■ ■ D²PAK ■ ■ Internal schematic diagram Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “H” identifies a family optimized for high frequency application. Applications ■ ■ HIGH FREQUENCY MOTOR CONTROL SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES Order codes Sales Type STGB6NB60HD Marking GB6NB60HD Package D²PAK Packaging TAPE & REEL November 2005 This is a preliminary information on a new product in development or undergoing evaluation. Details are subject to change without notice Rev 1 1/10 www.st.com 10 1 Electrical ratings STGB6NB60HD 1 Table 1. Electrical ratings Absolute maximum ratings Parameter Collector-Emitter Voltage (VGS = 0) Collector Current (continuous) at 25°C Collector Current (continuous) at 100°C Collector Current (pulsed) Gate-Emitter Voltage Total Dissipation at TC = 25°C Operating Junction Temperature – 65 to 150 Storage Temperature °C Value 600 12 6 48 ± 20 80 Unit V A A A V W Symbol VCES IC IC ICM Note 1 VGE PTOT Tj Tstg Table 2. Thermal resistance Min. Typ. Max. 1.56 62.5 0.5 Unit °C/W °C/W °C/W Rthj-case Rthj-amb Rthc-h Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance case-hetsink 2/10 STGB6NB60HD 2 Electrical characteristics 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 3. Symbol VBR(CES) VCE(SAT) VGE(th) ICES Static Parameter Collectro-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Gate Threshold Voltage Collector-Emitter Leakage Current (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Forward Transconductance Test Conditions IC = 250µA, V GE = 0 VGE= 15V, IC= 6A, Tj= 25°C VGE= 15V, IC= 6A, Tj= 125°C VCE= VGE, IC= 250µA VCE = Max Rating,Tc=25°C VCE = Max Rating, Tc=125°C VGE = ± 20V , VCE = 0 VCE = 25V, IC= 6A 3 4.5 3 Min. 600 2.1 1.6 2.7 Typ. Max. Unit V V V V µA µA nA S 5 50 500 ± 100 IGES gfs Table 4. Symbol C ies C oes Cres Qg Qge Qgc ICL Dynamic Parameter Test Conditions Min. 390 45 10 Typ. 560 68 15 42 7.9 17.6 52 Max. 730 90 20 55 Unit pF pF pF nC nC nC A Input Capacitance VCE = 25V, f = 1MHz, V GE = 0 Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-Off SOA Minimum Current VCE = 480V, IC = 6A, VGE = 15V, (see Figure 2) Vclamp = 480V , Tj = 150°C RG = 10Ω, VGE= 15V 3/10 2 Electrical characteristics STGB6NB60HD Table 5. Symbol td(on) tr (di/dt)on tc tr(Voff) td(off) tf tc tr(Voff) td(off) tf Switching on/off (inductive load) Parameter Turn-on Delay Time Current Rise Time Turn-on Current Slope Cross-over Time Off Voltage Rise Time Turn-off Delay Time Current Fall Time Cross-over Time Off Voltage Rise Time Turn-off Delay Time Current Fall Time Test Conditions VCC = 480V, IC = 6A RG= 10Ω, VGE= 15V, Tj= 125°C (see Figure 3) Vcc =480V, IC = 6A, RGE=10Ω , VGE =15V, Tj=25°C (see Figure 3) Min. Typ. 15 48 160 85 20 75 70 150 50 110 110 Max. Unit ns ns A/µs ns ns ns Vcc =480V, IC = 6A, RGE=10Ω , VGE =15V, Tj=125°C (see Figure 3) ns ns ns Table 6. Symbol Eon Note 2 Eoff Note 3 Ets Eon Note 2 Eoff Note 3 Ets Switching energy (inductive load) Parameter Turn-on Switching Losses Turn-off Switching Losses Total Switching Losses Turn-on Switching Losses Turn-off Switching Losses Total Switching Losses Test Conditions Vcc =480V, IC = 6A, RGE=10Ω , VGE =15V, Tj=25°C (see Figure 3) Vcc =480V, IC = 6A, RGE=10Ω , VGE =15V, Tj=125°C (see Figure 3) Min. Typ. 150 85 235 185 220 405 Max. Unit µJ µJ µJ µJ µJ µJ Table 7. Symbol Vf If Ifm trr Qrr Irrm Collector-emitter diode Parameter Forward On-Voltage Forward Current Forward Current pulsed Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current If = 6A, VR = 200V, Tj = 125°C, di/dt = 100A/µs (see Figure 4) 100 135 2.7 Test Conditions If = 6A If = 6A, Tj = 125°C Min. Typ. 1.8 1.4 Max. 2.2 Unit V V A A ns ns nC 6 48 (1)Pulse width limited by max. junction temperature (2) Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2 Eon include diode recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C) (3) Turn-off losses include also the tail of the collector current 4/10 STGB6NB60HD 3 Test Circuits 3 Test Circuits Test Circuit for Inductive Load Switching Figure 2. Gate Charge Test Circuit Figure 1. Figure 3. Switching Waveform Figure 4. Diode Recovery Time Waveform 5/10 4 Package mechanical data STGB6NB60HD 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 6/10 STGB6NB60HD 4 Package mechanical data D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0º 4.88 15 1.27 1.4 2.4 0.4 4º 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch 3 1 7/10 5 Packaging mechanical data STGB6NB60HD 5 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 8/10 STGB6NB60HD 6 Revision History 6 Revision History Date 18-Nov-2005 Revision 1 Initial release. Changes 9/10 6 Revision History STGB6NB60HD Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners © 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 10/10