Description
www.DataSheet4U.com SemiWell Semiconductor Bi-Directional Triode Thyristor STF25A60 UL : E228720 Symbol Features Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 25 A ) ◆ High Commutation dv/dt ◆ Isolation Voltage ( VISO = 1500V AC ) ◆ ◆ ○ 2.T2 ▼ ▲ ○ 3.Gate 1.T1 ○ TO-220F General Description This device is fully isolated package suitable for AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay. This device is approved to comply with applicable requirements by Underwriters Laboratories Inc. 1 2 3 Absolute Maximum Ratings Symbol VDRM IT(RMS) ITSM I2 t PGM PG(AV) IGM VGM TJ TSTG ( TJ = 25°C unless otherwise specified ) Condition Ratings 600 TC = 77 °C One Cycle, 50Hz/60Hz, Peak, Non-Repetitive 25 225/250 260 5.0 0.5 2.0 10 - 40 ~ 125 - 40 ~ 150 2.0 Parameter Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current I2 t Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Operating Junction Temperature Storage Temperature Mass Units V A A A2 s W W A V °C °C g Aug, 2003. Rev. 1 Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved 1/6 www.DataSheet4U.com STF25A60 Electrical Characteristics Symbol Items Repetitive Peak Off-State Current Peak On-State Voltage Ⅰ Ⅱ Ⅲ Ⅰ Ⅱ Ⅲ Non-Trigger Gate Voltage Critical Rate of Rise Off-State Voltage at Commutation Holding Current Thermal Impedance Junction to case TJ = 125 °C, VD = 1/2 VDRM TJ = 125 °C, [di/dt]c = -12.5 A/ms, VD=2/3 VDRM Gate Trigger Voltage VD = 6 V, RL=10 Ω Gate Trigger Current VD = 6 V, RL=10 Ω Conditions VD = VDRM, Single Phase, Half Wave TJ = 125 °C IT = 35 A, Inst. Measurement Ratings Min. ─ ─ ─ ─ ─ ─ ─ ─ 0.2 6 ─ ─ Typ. ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ 35 ─ Max. 5.0 1.4 30 30 30 1.5 1.5 1.5 ─ ─ ─ 1.6 Unit IDRM VTM I+GT1 I -GT1 I -GT3 V+GT1 V-GT1 V-GT3 VGD (dv/dt)c IH Rth(j-c) mA V mA V V V/㎲ mA °C/W 2/6 www.DataSheet4U.com STF25A60 Fig 1. Gate Characteristics 10 3 Fig 2. On-State Voltage 10 1 VGM (10V) On-State Current [A] Gate Voltage [V] PGM (5W) PG(AV) (0.5W) 25 ℃ 10 10 2 TJ = 125 C o IGM (2A) 0 10 1 TJ = 25 C o 10 -1 VGD (0.2V) 1 10 10 2 10 3 10 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Gate Current [mA] On-State Voltage [V] Fig 3. On State Current vs. Maximum Power Dissipation Allowable Case Temperature [ oC] 35 30 130 Fig 4. On State Current vs. Allowable Case Temperature Power Dissipation [W] π θ 360° θ 2π 25 20 15 10 5 0 θ = 180 o θ = 150 o θ = 120 θ = 90 o θ = 60 θ = 30 o o 120 110 θ : Conduction Angle o 100 π θ 360° θ 2π θ = 30 o o 90 θ 80 : Conduction Angle θ = 60 o θ = 90 o θ = 120 o θ = 150o θ = 180 15 20 25 30 0 5 10 15 20 25 30 0 5 10 RMS On-State Current [A] RMS On-State Current [A] Fig 5. Surge On-State Current Rating ( Non-Repetitive ) 280 240 Fig 6. Gate Trigger Voltage vs. Junction Temperature 10 Surge On-State Current [A] 200 160 120 60Hz VGT (25 C) VGT (t C) o o 1 50Hz 80 40 0 0 10 V V V + GT1 _ GT1 _ GT3 10 1 10 2 0.1 -50 0 50 100 o 150 Time (cycles) Junction Temperature [ C] 3/6 www.DataSheet4U.com STF25A60 Fig 7. Gate Trigger Current vs. Junction Temperature 10 10 Fig 8. Transient Thermal Impedance I GT3 IGT (25 C) IGT (t C) o o 1 o _ Transient Thermal Impedance [ C/W] I I + GT1 _ GT1 1 0.1 -50 0 50 100 o 150 0.1 -2 10 10 -1 10 0 10 1 Junction Temperature [ C] Time (sec) Fig 9. Gate Trigger Characteristics Test Circuit 10Ω 10Ω 10Ω ▼ ▲ 6V ● A ▼ ▲ RG 6V ● A ▼ ▲ RG 6V ● A V ● V ● V ● RG Test Procedure Ⅰ Test Procedure Ⅱ Test Procedure Ⅲ 4/6 www.DataSheet4U.com STF25A60 TO-220F Package Dimension Dim. A B C D E F G H I J K L M N O Min. 10.4 6.18 9.55 13.47 6.05 1.26 3.17 1.87 2.57 mm Typ. Max. 10.6 6.44 9.81 13.73 6.15 1.36 3.43 2.13 2.83 Min. 0.409 0.243 0.376 0.530 0.238 0.050 0.125 0.074 0.101 Inch Typ. Max. 0.417 0.254 0.386 0.540 0.242 0.054 0.135 0.084 0.111 2.54 5.08 2.51 1.25 0.45 0.6 3.7 3.2 1.5 2.62 1.55 0.63 1.0 0.099 0.049 0.018 0.024 0.100 0.200 0.103 0.061 0.025 0.039 0.146 0.126 0.059 φ φ 1 φ 2 F B A E H I φ φ1 φ2 C L 1 D 2 3 J K M G 1. T1 2. T2 3. Gate N O 5/6 www.DataSheet4U.com STF25A60 TO-220F Package Dimension, Forming Dim. A B C D E F G H I J K L M N O P Min. 10.4 6.18 9.55 8.4 6.05 1.26 3.17 1.87 2.57 mm Typ. Max. 10.6 6.44 9.81 8.66 6.15 1.36 3.43 2.13 2.83 Min. 0.409 0.243 0.376 0.331 0.238 0.050 0.125 0.074 0.101 Inch Typ. Max. 0.417 0.254 0.386 0.341 0.242 0.054 0.135 0.084 0.111 2.54 5.08 2.51 1.25 0.45 0.6 5.0 3.7 3.2 1.5 2.62 1.55 0.63 1.0 0.099 0.049 0.018 0.024 0.100 0.200 0.103 0.061 0.025 0.039 0.197 0.146 0.126 0.059 φ φ 1 φ 2 F B A E H I φ φ1 φ2 C L 1 2 3 N J K O P M G D 1. T1 2. T2 3. Gate 6/6

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STF25A60

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