N-CHANNEL MOSFET

www.DataSheet4U.com STD70N02L STD70N02L-1 N-channel 24V - 0.0068Ω - 60A - DPAK - IPAK STripFET™ III Power MOSFET General features Type STD70N02L STD70N02L-1 ■ ■ ■ ■ VDSS 24V 24V RDS(on) <0.008Ω <0.008Ω ID 60A 60A 3 1 RDS(ON) * Qg industry’s benchmark Conduction losses reduced Switching losses reduced Low threshold device 3 2 1 DPAK IPAK Description This series of products utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable for the most demanding DC-DC converter application where high efficiency is to be achieved. Internal schematic diagram Applications ■ Switching application Order codes Part number STD70N02L-1 STD70N02L Marking D70N02L D70N02L Package IPAK DPAK Packaging Tube Tape & reel May 2006 Rev 4 1/17 www.st.com 17 Contents STD70N02L - STD70N02L-1 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 STD70N02L - STD70N02L-1 Electrical ratings 1 Electrical ratings Table 1. Symbol Vspike (1) VDS VDGR VGS ID (2) ID IDM (3) PTOT Absolute maximum ratings Parameter Drain-source voltage rating Drain-source voltage (VGS = 0) Drain-gate voltage (R GS = 20kΩ) Gate-source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC = 100°C Drain current (pulsed) Total dissipation at T C = 25°C Derating factor Value 30 24 24 ± 20 60 42 240 60 0.4 280 -55 to 175 Unit V V V V A A A W W/°C mJ °C EAS (4) Tj Tstg Single pulse avalanche energy Operating junction temperature Storage temperature 1. Guaranted when external Rg=4.7Ω and Tf