N-CHANNEL MOSFET

www.DataSheet4U.com STD38NH02L STD38NH02L-1 N-channel 24V - 0.011Ω - 38A - DPAK/IPAK STripFET™ III Power MOSFET General features Type STD38NH02L-1 STD38NH02L ■ ■ ■ ■ ■ VDSS 24V 24V RDS(on) <0.0135Ω <0.0135Ω ID 38A 38A 2 1 3 1 3 Logic level device RDS(ON) * Qg Industry’s benchmark Conduction losses reduced Switching losses reduced Low threshold drive iPAK DPAK Description This device utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achieved. Internal schematic diagram Applications ■ Switching application Order codes Part number STD38NH02L-1 STD38NH02LT4 Marking D38NH02L D38NH02L Package IPAK DPAK Packaging Tube Tape & reel July 2006 Rev 8 1/16 www.st.com 16 Contents STD38NH02L - STD38NH02L-1 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 6 7 Test circuit ................................................ 8 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 STD38NH02L - STD38NH02L-1 Electrical ratings 1 Electrical ratings Table 1. Symbol Vspike (1) VDS VDGR VGS ID ID IDM (2) Absolute maximum ratings Parameter Drain-source voltage rating Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 kΩ) Gate- source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC = 100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating Factor Value 30 24 24 ± 20 38 27 152 40 0.27 250 -55 to 175 Max. operating junction temperature Unit V V V V A A A W W/°C mJ °C Ptot (3) EAS Single pulse avalanche energy Storage temperature Tstg Tj 1. Garanted when external Rg=4.7 Ω and tf < tfmax. 2. Pulse width limited by safe operating area. 3. Starting Tj = 25 °C, ID = 19A, VDD = 18V Table 2. Rthj-case Rthj-amb TJ Thermal data Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose 3.75 100 275 °C/W °C/W °C 3/16 Electrical characteristics STD38NH02L - STD38NH02L-1 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 25mA, VGS =0 VDS = 20V VDS = 20V, TC = 125°C VGS = ± 20V VDS = VGS, ID = 250µA VGS = 10V, ID = 19A VGS = 5V, ID = 9.5A 1 1.8 0.011 0.015 Min. 24 1 10 ±100 2.5 0.0135 0.025 Typ. Max. Unit V µA µA nA V Ω Ω Table 4. Symbol gfs (1) Ciss Coss Crss Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Test conditions VDS = 10V, ID = 19A Min. Typ. 19 1070 305 45 Max. Unit S pF pF pF VDS = 25V, f = 1MHz, VGS = 0 f = 1 MHz Gate DC Bias = 0 Test Signal Level = 20 mV Open Drain VDD = 10V, ID = 19A RG = 4.7Ω VGS = 10V (see Figure 13) 0.44V ≤VDD ≤10V, ID = 38A, VGS = 10V, RG = 4.7Ω (see Figure 14) VDS= 16 V, VGS= 0 V RG Gate Input Resistance 1 Ω td(on) tr td(off) tf Qg Qgs Qgd Qoss(2) Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Output charge 7 62 25 12 18 4 2.5 6.5 24 ns ns ns ns nC nC nC nC 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Qoss = Coss*∆ Vin , Coss = Cgd + Cds . See Chapter 4: Appendix A 4/16 STD38NH02L - STD38NH02L-1 Electrical characteristics Table 5. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage ISD = 19A, VGS = 0 27 22 1.6 Test conditions Min. Typ. Max. 38 152 1.3 Unit A A V ns nC A Reverse recovery time ISD = 38A, di/dt = 100A/µs, Reverse recovery charge VDD = 18V, Tj = 150°C Reverse recovery current (see Figure 15) 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 5/16 Electrical characteristics STD38NH02L - STD38NH02L-1 2.1 Figure 1. Electrical characteristics (curves) Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/16 STD38NH02L - STD38NH02L-1 Figure 7. Gate charge vs gate-source voltage Figure 8. Electrical characteristics Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature Figure 10. Normalized on resistance vs temperature Figure 11. Source-drain diode forward characteristics Figure 12. Normalized breakdown voltage vs temperature 7/16 Test circuit STD38NH02L - STD38NH02L-1 3 Test circuit Figure 14. Gate charge test circuit Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform 8/16 STD38NH02L - STD38NH02L-1 Appendix A 4 Appendix A Figure 19. Buck converter: power losses estimation The power losses associated with the FETs in a synchronous buck converter can be estimated using the equations shown in the table below. The formulas give a good approximation, for the sake of performance comparison, of how different pairs of devices affect the converter efficiency. However a very important parameter, the working temperature, is not considered. The real device behavior is really dependent on how the heat generated inside the devices is removed to allow for a safer working junction temperature. ● ● ● ● ● ● ● ● ● ● ● The low side (SW2) device requires: Very low RDS(on) to reduce conduction losses Small Qgls to reduce the gate charge losses Small Coss to reduce losses due to output capacitance Small Qrr to reduce losses on SW1 during its turn-on The Cgd/Cgs ratio lower than Vth/Vgg ratio especially with low drain to source voltage to avoid the cross conduction phenomenon; The high side (SW1) device requires: Small Rg and Ls to allow higher gate current peak and to limit the voltage feedback on the gate Small Qg to have a faster commutation and to reduce gate charge losses Low RDS(on) to reduce the conduction losses. 9/16 Appendix A STD38NH02L - STD38NH02L-1 Table 6. Power losses calculation High side switching (SW1) Low side switch (SW2) Pconduction R DS(on)SW1 * I 2 * δ L R DS(on)SW2 * I 2 * (1 − δ ) L IL Ig Pswitching Vin * (Q gsth(SW1) + Q gd(SW1) ) * f * Zero Voltage Switching Recovery (1) Not applicable Vin * Q rr(SW2) * f Pdiode Conductio n Not applicable Vf(SW2) * I L * t deadtime * f Q gls(SW2) * Vgg * f Vin * Q oss(SW2) * f 2 Pgate(QG) Q g(SW1) * Vgg * f PQoss Vin * Q oss(SW1) * f 2 1. Dissipated by SW1 during turn-on Table 7. Paramiters meaning Meaning Duty-cycle Post threshold gate charge Third quadrant gate charge On state losses On-off transition losses Conduction and reverse recovery diode losses Gate drive losses Output capacitance losses Parameter d Qgsth Qgls Pconduction Pswitching Pdiode Pgate PQoss 10/16 STD38NH02L - STD38NH02L-1 Package mechanical data 5 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 11/16 Package mechanical data STD38NH02L - STD38NH02L-1 TO-251 (IPAK) MECHANICAL DATA DIM. MIN. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 0.3 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 2.2 0.9 0.7 0.64 5.2 mm TYP. MAX. 2.4 1.1 1.3 0.9 5.4 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033 H C A C2 L2 D B3 B6 A1 L = = 3 B5 B A3 = B2 = G = E L1 1 2 = 0068771-E 12/16 STD38NH02L - STD38NH02L-1 Package mechanical data DPAK MECHANICAL DATA mm. DIM. MIN. A A1 A2 B b4 C C2 D D1 E E1 e e1 H L (L1) L2 L4 R V2 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 5.1 6.4 4.7 2.28 4.4 9.35 1 2.8 0.8 0.6 0.2 0° 8° 0° 1 0.023 0.008 8° 4.6 10.1 0.173 0.368 0.039 0.110 0.031 0.039 6.6 0.252 0.185 0.090 0.181 0.397 TYP MAX. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.200 0.260 TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 inch 0068772-F 13/16 Packing mechanical data STD38NH02L - STD38NH02L-1 6 Packing mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R W BASE QTY 2500 mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40 15.7 16.3 inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063