N-Channel Logic Level E nhancement Mode Field Effect Transistor

www.DataSheet4U.com S T U/D302S S amHop Microelectronics C orp. Apr 03,2006 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 30V F E AT UR E S S uper high dense cell design for low R DS (ON). ID 50 A R DS (ON) ( m Ω ) Max 9 12 @ V G S = 10V @ V G S = 4.5V R ugged and reliable. TO-252 and TO-251 P ackage. D D G S G D S G S TU S E R IE S TO-252AA(D-P AK) S TD S E R IE S TO-251(l-P AK) S ABS OLUTE MAXIMUM R ATINGS (Ta=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous -P ulsed a S ymbol VDS VGS @ TC=25 C ID IDM IS PD TJ, TS TG Limit 30 20 50 180 20 50 -55 to 175 Unit V V A A A W C Drain-S ource Diode Forward C urrent Maximum P ower Dissipation @ Tc=25 C Operating and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient R JC R JA 3 50 C /W C /W 1 S T U/D302S E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS 5 Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS Rg b S ymbol Condition VGS = 0V, ID = 250uA VDS = 24V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250uA VGS =10V, ID = 20A VGS =4.5V, ID= 10A VDS = 10V, VGS = 10V VDS = 10V, ID = 10A Min Typ C Max Unit 30 1 V uA 100 nA 1 1.7 7 10 50 22 1020 325 225 0.25 18 33 37 28 3 9 12 V m ohm m ohm ON CHAR ACTE R IS TICS a Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance A S DYNAMIC CHAR ACTE R IS TICS b Input Capacitance Output Capacitance R everse Transfer Capacitance Gate resistance PF PF PF VDS =15V, VGS = 0V f =1.0MHZ VGS =0V, VDS = 0V, f=1.0MHZ VDD = 15V ID = 1 A VGS = 10V R GE N = 6 ohm VDS =15V, ID =20A,VGS =10V VDS =15V, ID =20A,VGS =4.5V ohm S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd ns ns ns ns nC nC nC nC 26 13 2.3 8.2 VDS =15V, ID = 20A VGS =10V 2 S T U/D302S E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted) Parameter Diode Forward Voltage S ymbol VSD Condition VGS = 0V, Is = 10A Min Typ Max Unit 0.83 1.3 V DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a Notes a.Pulse Test:Pulse Width 300us, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing. 80 V G S =4.5V 20 64 ID, Drain C urrent(A) ID, Drain C urrent (A) V G S =8V V G S =10V V G S =4V 15 -55 C 10 T j=125 C 5 25 C 48 32 V G S =3.5V 16 V G S =3V 0 0 0.5 1 1.5 2 2.5 3 0 0 0.6 1.2 1.8 2.4 3.0 3.6 V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 18 1.5 F igure 2. Trans fer C haracteris tics R DS (ON), On-R es is tance Normalized 15 1.4 1.3 1.2 1.1 1.0 0.0 V G S =4.5V ID=10A V G S =10V ID=20A R DS (on) (m Ω) 12 9 6 V G S =4.5V V G S =10V 3 0 1 16 32 48 64 80 0 25 50 75 100 125 150 T j( C ) ID, Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 3 S T U/D302S B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=250uA 1.15 ID=250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 6 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 30 F igure 6. B reakdown V oltage V ariation with T emperature 20.0 ID=20A Is , S ource-drain current (A) 25 75 C 10.0 25 C R DS (on) (m Ω) 20 75 C 15 125 C 10 25 C 5 0 125 C 1.0 0 2 4 6 8 10 0.4 0.6 0.8 1.0 1.2 1.4 V G S , G ate- S ource Voltage (V ) V S D, B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 S T U/D302S 1200 V G S , G ate to S ource V oltage (V ) C is s 1000 10 8 6 4 2 0 VDS =15V ID=20A C , C apacitance (pF ) 800 600 400 C rs s 200 0 C os s 6 0 5 10 15 20 25 30 0 5 10 15 20 25 30 35 40 V DS , Drain-to S ource Voltage (V ) Qg, T otal G ate C harge (nC ) F igure 9. C apacitance F igure 10. G ate C harge 220 Tr 600 100 N) (O S S witching T ime (ns ) L im T D(off) it Tf ID, Drain C urrent (A) 100 60 10 T D(on) 10 DC 10 1m ms s 0m 10 RD s 1s 1 1 V DS =15V ,ID=1A V G S =10V 1 0.5 0.1 V G S =10V S ingle P ulse T c=25 C 6 10 60 100 300 600 1 10 30 60 R g, G ate R es is tance (Ω) V DS , Drain-S ource V oltage (V ) F igure 11.s witching characteris tics F igure 12. Maximum S afe O perating Area 5 S T U/D302S V DD ton V IN D VG S R GE N G 90% toff tr 90% RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D 6 S V IN 50% 10% 50% P ULS E WIDTH F igure 13. S witching T es t C ircuit F igure 14. S witching Waveforms 2 r(t),Normalized E ffective T ransient T hermal Impedance 1 D=0.5 0.2 0.1 0.1 P DM 0.05 t1 0.02 0.01 S ING LE P ULS E 0.01 10 -5 -4 -3 -2 -1 t2 1. 2. 3. 4. 10 10 10 R J A (t)=r (t) * R J A R J A=S ee Datas heet T J M-T A = P DM* R J A (t) Duty C ycle, D=t1/t2 1 10 10 S quare Wave P uls e Duration (s ec) F igure 15. Normalized T hermal T rans ient Impedance C urve 6 S T U/D302S 7 S T U/D302S 5 95 7 84 9 6.00 35 05 85 0.94 4 3 0 9 7 30 3 9 36 3 41 3 3 5 1 4 L2 2.29 9.70 1.425 0.650 0.600 BSC 1 1.625 0.850 REF. 0.090 82 56 6 0.024 BSC 398 0.064 33 REF. 8 S T U/D302S TO251 Tube/TO-252 Tape and Reel Data TO-251 Tube " A" TO-252 Carrier Tape UNIT: PACKAGE TO-252 (16 A0 6.80 0.1 B0 10.3 0.1 K0 2.50 0.1 D0 2 D1 1.5 + 0.1 -0 E 16.0 0.3 E1 1.75 0.1 E2 7.5 0.15 P0 8.0 0.1 P1 4.0 0.1 P2 2.0 0.15 T 0.3 0.05 TO-252 Reel S UNIT: TAPE SIZE 16 REEL SIZE 330 M 330 0.5 N 97 1.0 W 17.0 + 1.5 -0 T 2.2 H 13.0 + 0.5 - 0.2 K 10.6 S 2.0 0.5 G R V 9