N-CHANNEL Power MOSFET

STB60N55F3 - STD60N55F3 - STF60N55F3 STP60N55F3 - STU60N55F3 N-channel 55V - 8.0mΩ - 65A - DPAK - IPAK - D2PAK - TO-220/FP STripFET™Power MOSFET General features Type STB60N55F3 STD60N55F3 STF60N55F3 STP60N55F3 STU60N55F3 ■ ■ VDSS 55V 55V 55V 55V 55V RDS(on) <10.5mΩ <10.5mΩ <10.5mΩ <10.5mΩ <10.5mΩ ID 65A 65A 30A 65A 65A Pw 110W 1 3 2 3 2 1 110W 30W 110W 110W TO-220FP 3 1 IPAK DPAK 3 1 3 Standard threshold drive 100% avalanche tested D²PAK 1 2 TO-220 Description This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics' unique “Single Feature Size™“ strip-based process, which has decreased the critical alignment steps, offering remarkable manufacturing reproducibility. The outcome is a transistor with extremely high packing density for low onresistance, rugged avalanche characteristics and low gate charge. Internal schematic diagram Applications ■ Switching application Order codes Part number STB60N55F3 STD60N55F3 STF60N55F3 STP60N55F3 STU60N55F3 Marking 60N55F3 60N55F3 60N55F3 60N55F3 60N55F3 Package D²PAK DPAK TO-220FP TO-220 IPAK Packaging Tape & reel Tape & reel Tube Tube Tube February 2007 Rev 2 1/19 www.st.com 19 Contents STB60N55F3 - STD60N55F3 - STF60N55F3 - STP60N55F3 - STU60N55F3 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 6 Test circuit ................................................ 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2/19 STB60N55F3 - STD60N55F3 - STF60N55F3 - STP60N55F3 - STU60N55F3 Electrical ratings 1 Electrical ratings Table 1. Symbol Absolute maximum ratings Value Parameter DPAK/D²PAK TO-220FP TO-220/IPAK 55 ± 20 65 46 260 110 0.73 11 390 -2500 30 21 120 30 0.2 Unit VDS VGS ID ID IDM (1) PTOT Drain-source voltage (VGS=0) Gate-source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC = 100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating factor V V A A A W W/°C V/ns mJ V dv/dt (2) EAS (3) VISO Tj Tstg Peak diode recovery voltage slope Single pulse avalanche energy Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25°C) Operating junction temperature Storage temperature -55 to 175 °C 1. Pulse width limited by safe operating area 2. ISD < 65A, di/dt < 300A/µs, VDD < V(BR)DSS. Tj < Tjmax 3. Starting Tj=25°C, Id=32A, Vdd=25V Table 2. Symbol Thermal resistance Value Parameter DPAK IPAK D²PAK TO-220 TO-220FP Thermal resistance junctioncase max 50 ---100 275 Unit Rthj-case 1.36 35 ---62.5 300 5 -- °C/W °C/W °C/W °C Thermal resistance junctionRthj-pcb (1) pcb max Rthj-a Tl Thermal resistance junctionambient max Maximum lead temperature for soldering purpose 1. When mounted on FR-4 board of 1inch², 2oz Cu 3/19 Electrical characteristics STB60N55F3 - STD60N55F3 - STF60N55F3 - STP60N55F3 - STU60N55F3 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Static Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250µA, VGS= 0 VDS = Max rating, VDS = Max rating,Tc = 125°C VGS = ±20V VDS= VGS, ID = 250µA VGS= 10V, ID= 32A 2 8.0 Min. Typ. Max. Unit 55 10 100 ±200 V µA µA nA V mΩ 4 10.5 Table 4. Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS =25V, ID=32A Min Typ. Max. Unit 50 2200 500 25 33.5 12.5 9.5 45 S pF pF pF nC nC nC VDS = 25V, f = 1MHz, VGS=0 VDD = 27V, ID = 65A VGS =10V (see Figure 15) 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% 4/19 STB60N55F3 - STD60N55F3 - STF60N55F3 - STP60N55F3 - STU60N55F3 Electrical characteristics Table 5. Symbol td(on) tr td(off) tf Switching on/off (inductive load) Parameter Turn-on delay time Rise time Test conditions VDD = 27V, ID = 32A, RG = 4.7Ω, VGS = 10V (see Figure 17) VDD = 27V, ID = 32A, RG = 4.7Ω, VGS = 10V (see Figure 17) Min. Typ. 20 50 Max. Unit ns ns Turn-off delay time Fall time 35 11.5 ns ns Table 6. Symbol ISD ISDM (1) Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 65A, VGS = 0 ISD = 65A, VDD = 30V di/dt = 100A/µs, Tj = 150°C (see Figure 16) 47 87 3.7 Test conditions Min. Typ. Max. 65 260 1.5 Unit A A V ns nC A VSD trr Qrr IRRM 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% 5/19 Electrical characteristics STB60N55F3 - STD60N55F3 - STF60N55F3 - STP60N55F3 - STU60N55F3 2.1 Figure 1. Electrical characteristics (curves) Safe operating area for TO-220 D²PAK / IPAK / DPAK Figure 2. Thermal impedance for TO-220 D²PAK / IPAK / DPAK Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP Figure 5. Output characteristics Figure 6. Transfer characteristics 6/19 STB60N55F3 - STD60N55F3 - STF60N55F3 - STP60N55F3 - STU60N55F3 Electrical characteristics Figure 7. Normalized BVDSS vs temperature Figure 8. Static drain-source on resistance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage vs temperature Figure 12. Normalized on resistance vs temperature 7/19 Electrical characteristics STB60N55F3 - STD60N55F3 - STF60N55F3 - STP60N55F3 - STU60N55F3 Figure 13. Source-drain diode forward characteristics 8/19 STB60N55F3 - STD60N55F3 - STF60N55F3 - STP60N55F3 - STU60N55F3 Test circuit 3 Test circuit Figure 15. Gate charge test circuit Figure 14. Switching times test circuit for resistive load Figure 16. Test circuit for inductive load Figure 17. Unclamped Inductive load test switching and diode recovery times circuit Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform 9/19 Package mechanical dataSTB60N55F3 - STD60N55F3 - STF60N55F3 - STP60N55F3 - STU60N55F3 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/19 STB60N55F3 - STD60N55F3 - STF60N55F3 - STP60N55F3 - STU60N55F3Package mechanical data DPAK MECHANICAL DATA mm. DIM. MIN. A A1 A2 B b4 C C2 D D1 E E1 e e1 H L (L1) L2 L4 R V2 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 5.1 6.4 4.7 2.28 4.4 9.35 1 2.8 0.8 0.6 0.2 0° 8° 0° 1 0.023 0.008 8° 4.6 10.1 0.173 0.368 0.039 0.110 0.031 0.039 6.6 0.252 0.185 0.090 0.181 0.397 TYP MAX. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.200 0.260 TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 inch 0068772-F 11/19 Package mechanical dataSTB60N55F3 - STD60N55F3 - STF60N55F3 - STP60N55F3 - STU60N55F3 TO-251 (IPAK) MECHANICAL DATA DIM. MIN. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 0.3 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 2.2 0.9 0.7 0.64 5.2 mm TYP. MAX. 2.4 1.1 1.3 0.9 5.4 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033 H C A C2 L2 D B3 B6 A1 L = = 3 B5 B A3 = B2 = G = E L1 1 2 = 0068771-E 12/19 STB60N55F3 - STD60N55F3 - STF60N55F3 - STP60N55F3 - STU60N55F3Package mechanical data D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0º 4.88 15 1.27 1.4 2.4 0.4 4º 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch 3 1 13/19 Package mechanical dataSTB60N55F3 - STD60N55F3 - STF60N55F3 - STP60N55F3 - STU60N55F3 TO-220 mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 θP Q 4.40 0.61 1.14 0.49 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6 inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116 14/19 STB60N55F3 - STD60N55F3 - STF60N55F3 - STP60N55F3 - STU60N55F3Package mechanical data TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Ø A B L3 L6 L7 F1 F D G1 H F2 L2 L5