N-CHANNEL POWER MOSFET

www.DataSheet4U.com N-CHANNEL 30V - 0.027 Ω - 5A TSSOP8 2.7V-DRIVE STripFET™ II POWER MOSFET TYPE STC5NF30V s s s STC5NF30V VDSS 30 V RDS(on) < 0.031 Ω ( @ 4.5 V ) < 0.035 Ω ( @ 2.7 V ) ID 5A s TYPICAL RDS(on) = 0.027 Ω @ 4.5 V TYPICAL RDS(on) = 0.031 Ω @ 2.7 V ULTRA LOW THRESHOLD GATE DRIVE (2.7 V) STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY TSSOP8 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR DRIVE s DC-DC CONVERTERS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT s POWER MANAGEMENT IN PORTABLE/DESKTOP PCs INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM(•) Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Value 30 20 ± 12 5 3 20 1.5 Unit V V V A A A W Total Dissipation at TC = 25°C Ptot (•) Pulse width limited by safe operating area. June 2003 . 1/8 STC5NF30V THERMAL DATA Rthj-pcb Rthj-pcb Tj Tstg Thermal Resistance Junction-PCB (**) Thermal Resistance Junction-PCB (*) Operating Junction Temperature Storage temperature Max Max 100 83.5 -55 to 150 -55 to 150 °C/W °C/W °C °C (*) When Mounted on FR-4 board with 1 inch2 pad, 2 oz of Cu and t [ 10 sec (**) When Mounted on minimum recommended footprint ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125°C VGS = ± 12V Min. 30 1 10 ±100 Typ. Max. Unit V µA µA nA ON (*) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 4.5 V VGS = 2.7 V ID = 250 µA ID = 2.5 A ID = 2.5 A Min. 0.6 0.027 0.031 0.031 0.035 Typ. Max. Unit V Ω Ω DYNAMIC Symbol gfs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS=15 V ID = 2.5 A Min. Typ. 9.5 460 200 50 Max. Unit S pF pF pF VDS = 15V f = 1 MHz, VGS = 0 2/8 STC5NF30V ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions ID = 2.5 A VDD = 10 V RG = 4.7 Ω VGS = 4.5 V (Resistive Load, Figure 1) VDD= 16V ID= 5A VGS=4.5V (see test circuit, Figure 2) Min. Typ. 7 33 8.5 1.8 2.4 11.5 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf td(Voff) tf tc Parameter Turn-off Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Test Conditions ID = 2.5 A VDD = 10 V RG = 4.7Ω, VGS = 4.5 V (Resistive Load, Figure 1) ID = 5 A Vclamp = 16 V RG = 4.7Ω, VGS = 4.5 V (Inductive Load, Figure 3) Min. Typ. 27 10 26 11 21 Max. Unit ns ns ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (•) VSD (*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 5 A VGS = 0 26 13 1 Test Conditions Min. Typ. Max. 5 20 1.2 Unit A A V ns nC A di/dt = 100A/µs ISD = 5 A VDD = 10 V Tj = 150°C (see test circuit, Figure 3) (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/8 STC5NF30V Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STC5NF30V Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Thermal resistance and max power . . 5/8 STC5NF30V Fig. 1: Switching Times Test Circuits For Resistive Load Fig. 2: Gate Charge test Circuit Fig. 3: Test Circuit For Diode Recovery Behaviour 6/8 STC5NF30V TSSOP8 MECHANICAL DATA DIM. A A1 A2 b c D E E1 e L L1 k 0o 0.45 1.00 8o 0.192 mm. MIN. 1.05 0.05 0.80 0.19 0.090 2.90 6.20 4.30 0.65 0.75 0.018 0.039 0.208 TYP. MAX. 1.20 0.15 1.05 0.30 0.20 3.10 6.60 4.50 MIN. 0.041 0.002 0.032 0.008 0.003 0.114 0.240 0.170 0.025 0.030 inch. TYP. MAX. 0.047 0.006 0.041 0.012 0.007 0.122 0.260 0.177 7/8 STC5NF30V Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics ® 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. 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