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Part Number |
STB80NF03L-04T-1 |
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Manufacturer |
ST Microelectronics |
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Semiconductor DataSheet |
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DataSheet View |
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www.DataSheet4U.com
STB80NF03L-04T-1 STB80NF03L-04T
N-CHANNEL 30 V - 0.0035Ω - 80A D²PAK/I²PAK STripFET™II MOSFET
Table 1: General Features
TYPE STB80NF03L-04T STB80NF03L-04T-1
s s s
Figure 1: Package
RDS(on) < 0.004 Ω < 0.004 Ω ID (1) 80 A 80 A
VDSS 30 V 30 V
TYPICAL RDS(on) = 0.0035 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED
3 1
3 12
DESCRIPTION This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING
D2PAK
I2PAK
Figure 2: Internal Schematic Diagram
Table 2: Order Codes
Part Number STB80NF03L-04TT4 STB80NF03L-04T-1 Marking B80NF03L-04T B80NF03L-04T Package D2PAK I2PAK Packaging TAPE & REEL TUBE
Rev. 1 February 2005 1/11
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Table 3: Absolute Maximum ratings
Symbol VDS VDGR VGS ID (#) ID (#) IDM ( ) PTOT dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery Voltage Slope Storage Temperature Max. Operating Junction Temperature Value 30 30 ± 20 80 80 320 300 2.0 2.0 –65 to 175 175 Unit V V V A A A W W/°C V/ns °C °C
(q) Pulse width limited by safe operating area (1) ISD ≤ 80A, di/dt ≤ 300A/µs, VDD =24 V ; Tj ≤ TJMAX. (#) Limited by Package
Table 4: Thermal Data
Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 0.5 62.5 300 °C/W °C/W °C
Table 5: Avalanche Characteristics
Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 15 V) Max Value 40 2.3 Unit A J
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 6: On /Off
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ± 20V VDS = VGS, ID = 250µA VGS = 10 V, ID = 40 A VGS = 5 V, ID = 20 A 1 1.5 0.0035 0.0065 Min. 30 1 10 ±100 2.5 0.004 0.0095 Typ. Max. Unit V µA µA nA V Ω Ω
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Table 7: Dynamic
Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS =15 V, ID = 40 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 100 5000 1720 350 Max. Unit S pF pF pF
ELECTRICAL CHARACTERISTICS (CONTINUED) Table 8: Switching On
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 15 V, ID = 40 A RG = 4.7Ω VGS = 5.0 V (see test circuit, Figure 3) VDD = 15 V, ID = 80A, VGS = 10V Min. Typ. 40 300 120 25 40 168 Max. Unit ns ns nC nC nC
Table 9: Switching
Symbol td(off) tf Parameter Turn-off-Delay Time Fall Time Test Conditions VDD = 15 V, ID = 40 A, RG = 4.7Ω, VGS = 5.0V (see test circuit, Figure 3) Min. Typ. 30 70 Max. Unit ns ns
Table 10: Source Drain Diode
Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 80 A, VGS = 0 ISD = 80 A, di/dt = 100A/µs, VDD = 20 V, Tj = 150°C (see test circuit, Figure 5) 75 140 4 Test Conditions Min. Typ. Max. 80 320 1.5 Unit A A V ns nC A
(1) The value is rated according Rthj-C and is limited by wire bonding. (2) When mounted on FR-4 board of 1in², 2oz Cu, t < 10sec
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Figure 3: Safe Operating Area Figure 6: Thermal Impedance
Figure 4: Output Characteristics
Figure 7: Transfer Characteristics
Figure 5: Transconductance
Figure 8: Static Drain-source On Resistance
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Figure 9: Gate Charge vs Gate-source Voltage Figure 12: Normalized On Resistance vs Temperature
Figure 10: Normalized Gate Thereshold Voltage vs Temperature
Figure 13: Normalized BVDSS vs Temperature
Figure 11: Capacitance Variations
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Figure 14: Switching Times Test Circuit For Resistive Load Figure 16: Gate Charge Test Circuit
Figure 15: Test Circuit For Diode Recovery Times
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D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA
mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0º 4.88 15 1.27 1.4 2.4 0.4 4º 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch
3
1
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D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956
BASE QTY 1000
* on sales type
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TO-262 (I2PAK) MECHANICAL DATA
mm. DIM. MIN. A A1 b b1 c c2 D e e1 E L L1 L2 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 TYP MAX. 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 MIN. 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 TYP. MAX. 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 inch
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Table 11: Revision History
Date 15-Feb-2005 Revision 1 First Release. Description of Changes
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
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