N-CHANNEL Power MOSFET

STB3NA60-1 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STB3NA60-1 s s s s s s s V DSS 600 V R DS(on) <4Ω ID 2.9 A TYPICAL RDS(on) = 0.7 Ω AVALANCHE RUGGED TECHNOLOGY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED I2PAK TO-262 3 12 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS ID ID I DM (•) P tot T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature o o o Value 600 600 ± 30 2.9 1.8 11.6 80 0.64 -65 to 150 150 Unit V V V A A A W W/ o C o o C C (•) Pulse width limited by safe operating area March 1996 1/9 STB3NA60-1 THERMAL DATA R thj-case R thj-amb R thj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ 1.56 62.5 0.5 300 o o C/W C/W o C/W o C AVALANCHE CHARACTERISTICS Symbol I AR E AS EAR I AR Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR , V DD = 50 V) Repetitive Avalanche Energy (pulse width limited by T j max, δ < 1%) Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, δ < 1%) Max Value 2.9 42 1.6 1.8 Unit A mJ mJ A ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µA V GS = 0 Min. 600 250 1000 ±100 Typ. Max. Unit V µA µA nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V DS = 0) V GS = ± 30 V T c = 125 o C ON (∗) Symbol V GS(th) R DS(on) ID(on) Parameter Gate Threshold Voltage V DS = VGS Static Drain-source On Resistance V GS = 10 V V GS = 10 V Test Conditions ID = 250 µA I D = 1.5 A I D = 1.5 A T C = 100 o C 2.9 Min. 2.25 Typ. 3 3.3 Max. 3.75 4 8 Unit V Ω A On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V DYNAMIC Symbol g fs (∗) C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > I D(on) x R DS(on)max V DS = 25 V f = 1 MHz I D = 1.5 A V GS = 0 Min. 1 Typ. 2 380 57 17 500 75 23 Max. Unit S pF pF pF 2/9 STB3NA60-1 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr (di/dt) on Parameter Turn-on Time Rise Time Turn-on Current Slope Test Conditions V DD = 300 V I D = 1.5 A R G = 18 Ω V GS = 10 V (see test circuit, figure 3) V DD = 400 V ID = 3 A R G = 18 Ω V GS = 10 V (see test circuit, figure 5) ID = 3 A V DD = Max Rating x 0.8 V GS = 10 V Min. Typ. 14 25 300 Max. 20 35 Unit ns ns A/µs Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge 22 6 9 30 nC nC nC SWITCHING OFF Symbol t r(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 480 V ID = 3 A R G = 18 Ω V GS = 10 V (see test circuit, figure 5) Min. Typ. 13 24 12 Max. 18 34 17 Unit ns ns ns SOURCE DRAIN DIODE Symbol I SD I SDM (•) V SD (∗) t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 2.9 A V GS = 0 460 5.6 24 I SD = 3 A di/dt = 100 A/µs V DD = 100 V T j = 150 o C (see test circuit, figure 5) Test Conditions Min. Typ. Max. 2.9 11.6 1.5 Unit A A V ns µC A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance 3/9 STB3NA60-1 Derating Curve Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage 4/9 STB3NA60-1 Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Turn-on Current Slope Turn-off Drain-source Voltage Slope Cross-over Time 5/9 STB3NA60-1 Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform 6/9 STB3NA60-1 Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And DIode Recovery Times 7/9 STB3NA60-1 TO-262 (I2PAK) MECHANICAL DATA mm MIN. A A1 B B1 B2 C C2 D e E L L1 L2 4.3 2.49 0.7 1.2 1.25 0.45 1.21 9 2.44 10 13.2 3.48 1.27 TYP. MAX. 4.6 2.69 0.93 1.38 1.4 0.6 1.36 9.35 2.64 10.28 13.5 3.78 1.37 MIN. 0.169 0.098 0.027 0.047 0.049 0.017 0.047 0.354 0.096 0.393 0.519 0.137 0.050 inch TYP. MAX. 0.181 0.106 0.036 0.054 0.055 0.023 0.053 0.368 0.104 0.404 0.531 0.149 0.054 DIM. A C2 B2 B E L1 L2 D L 8/9 e A1 C STB3NA60-1 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 9/9