N-CHANNEL Power MOSFET

N-CHANNEL 60V - 0.035 Ω - 30A D 2PAK STripFET™ POWER MOSFET TYPE STB30NE06L s s s s STB30NE06L VDSS 60 V RDS(on) <0.05 Ω ID 30 A s TYPICAL RDS(on) = 0.035Ω 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC APPLICATION ORIENTED CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE 3 1 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. D2PAK TO-263 (suffix“T4”) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s DC MOTOR CONTROL s DC-DC & DC-AC CONVERTERS ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM(•) Ptot Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Storage Temperature Max. Operating Junction Temperature Value 60 60 ±20 30 21 120 80 0.53 –60 to 175 175 Unit V V V A A A W W/°C °C °C (•)Pulse width limited by safe operating area. November 2000 1/6 STB30NE06L THERMAL DATA Rthj-case Rthj-amb Rthc-sink Tj Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ 1.875 62.5 0.5 300 °C/W °C/W °C/W °C AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 20 100 Unit A mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 25 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ±20 V Min. 60 1 10 ±100 Typ. Max. Unit V µA µA nA ON (1) Symbol VGS(th) IDS(on) ID(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance On State Drain Current Test Conditions VDS = VGS VGS = 5V VGS = 10V ID = 250 µA ID = 15 A ID = 15 A 30 Min. 1 Typ. 1.75 0.045 0.035 Max. 2.5 0.06 0.05 Unit V Ω Ω A VDS > ID(on) x RDS(on)max VGS = 10 V DYNAMIC Symbol gfs (1) Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitances Test Conditions VDS > ID(on) x RDS(on)max, ID=15 A VDS = 25V f = 1 MHz VGS = 0 Min. 10 Typ. 18 1350 195 58 Max. Unit S pF pF pF Ciss Coss Crss 2/6 STB30NE06L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Test Conditions Min. Typ. 25 105 20 8 10 28 Max. Unit ns ns nC nC nC Turn-on Delay Time Rise Time VDD = 30 V ID = 15 A VGS = 4.5 V RG = 4.7 Ω (see test circuit, Figure 3) Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=48 V ID=30 A VGS=5 V SWITCHING OFF Symbol td(off) tf td(off) tf tc Parameter Turn-off Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 30 V ID = 15 A VGS = 4.5 V RG = 4.7 Ω (Resistive Load, see fig.3) Vclamp = 48 V ID = 30 A VGS = 4.5 V RG = 4.7 Ω (Inductive Load, see fig.5) Min. Typ. 50 20 15 40 60 Max. Unit ns ns ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (•) VSD (*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 30 A VGS = 0 80 0.18 4.5 Test Conditions Min. Typ. Max. 30 120 1.5 Unit A A V ns µC A ISD = 30 A di/dt = 100 A/µs Tj = 150 °C VDD = 30V (see test circuit, Figure 3) (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. 3/6 STB30NE06L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/6 STB30NE06L D2PAK MECHANICAL DATA DIM. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 mm. MIN. 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10 8.5 4.88 15 1.27 1.4 2.4 0.4 0º 8º 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 10.4 0.393 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 inch TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 0.315 0.334 0.208 0.625 0.055 0.068 0.126 0.015 5/6 STB30NE06L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics © 2000 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. 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