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Part Number |
STB30N10 |
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Manufacturer |
ST Microelectronics |
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Semiconductor DataSheet |
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DataSheet View |
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N-CHANNEL 100V - 0.06 Ω - 30A D2PAK POWER MOSFET TRANSISTOR
TYPE STB30N10
s s s s s s s
STB30N10
PRELIMINARY DATA
VDSS 100 V
RDS(on) <0.07 Ω
ID 30 A
s
TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE VERY HIGH CURRENT CAPABILITY APPLICATION ORIENTED CHARACTERIZATION SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4")
3 1
D2PAK TO-263 (suffix“T4”)
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMP DRIVERS, etc.)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM(•) Ptot Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Storage Temperature Max. Operating Junction Temperature Value 100 100 ±20 30 21 120 150 1 –65 to 175 175 Unit V V V A A A W W/°C °C °C
(•)Pulse width limited by safe operating area
(1)ISD [ 22 A, di/dt m 300A/ms, VDD [ V(BR)DSS, Tj [ T JMA
November 2000
This is preliminary data new product in development or undergoing evaluation. Details are subject to change without notice.
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STB30N10
THERMAL DATA
Rthj-case Rthj-amb Rthc-sink Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Max Max Max 1 62.5 0.5 °C/W °C/W °C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA VGS = 0 Min. 100 10 10 ±100 Typ. Max. Unit V µA µA nA
VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ± 20 V
ON (*)
Symbol VGS(th) RDS(on) ID(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance On State Drain Current Test Conditions VDS = VGS VGS = 10 V ID = 250 µA ID = 15 A 30 Min. 2 Typ. 3 0.06 Max. 4 0.07 Unit V Ω A
VDS > ID(on) x RDS(on)max VGS = 10 V
DYNAMIC
Symbol gfs
(*)
Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitances
Test Conditions VDS > ID(on) x RDS(on)max ID=15 A VDS = 25V f = 1 MHz VGS = 0
Min. 10
Typ. 20 2600 350 85
Max.
Unit S
Ciss Coss Crss
3600 500 110
pF pF pF
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STB30N10
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symbol td(on) tr td(on) Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Turn-on Current Slope Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 50 V ID = 15 A VGS = 10 V RG = 47 Ω (see test circuit, Figure 3) VDD = 80 V RG = 47 Ω ID = 30 A VGS = 10 V Min. Typ. 25 60 480 80 13 28 120 Max. 35 90 Unit ns ns A/µs nC nC nC
VDD= 80 V ID= 30 A VGS=10 V
SWITCHING OFF
Symbol td(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Vclamp = 80 V ID = 30 A VGS = 10 V RG = 47 Ω (see test circuit, Figure 5) Min. Typ. 25 25 55 Max. 35 35 75 Unit ns ns ns
SOURCE DRAIN DIODE
Symbol ISD ISDM(•) VSD (*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 30 A VGS = 0 175 1.05 12 Test Conditions Min. Typ. Max. 30 120 1.5 Unit A A V ns µC A
ISD =30 A di/dt = 100 A/µs Tj = 150 °C VDD = 30 V (see test circuit, Figure 5)
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area.
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STB30N10
Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
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STB30N10
D2PAK MECHANICAL DATA
DIM. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2
mm. MIN. 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10 8.5 4.88 15 1.27 1.4 2.4 0.4 0º 8º 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 10.4 0.393 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352
inch TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 0.315 0.334 0.208 0.625 0.055 0.068 0.126 0.015
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STB30N10
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics © 2000 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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