N-CHANNEL Power MOSFET

N-CHANNEL 30V - 0.013 Ω - 40A D2PAK/TO-220 STripFET™ POWER MOSFET TYPE STB3015L STP3015L s s s s STB3015L STP3015L PRELIMINARY DATA VDSS 30 V 30 V RDS(on) <0.0155 Ω <0.0155 Ω ID 40 A 40 A s TYPICAL RDS(on) = 0.013 Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE A 100 oC APPLICATION ORIENTED CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE 3 1 D2PAK TO-263 (suffix“T4”) 3 1 2 TO-220 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS IN HIGH PERFORMANCE VRMs s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, etc.) ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM(•) Ptot dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 30 30 ±20 40 28 160 80 0.53 7 –65 to 175 175 Unit V V V A A A W W/°C V/ns °C °C (•)Pulse width limited by safe operating area (1)ISD [ 40 A, di/dt m 200A/ms, VDD [ V(BR)DSS, Tj [ T JMA November 2000 This is preliminary data new product in development or undergoing evaluation. Details are subject to change without notice. 1/7 STB3015L/STP3015L THERMAL DATA Rthj-case Rthj-amb Rthc-sink Tj Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max Typ 1.88 62.5 0.5 300 °C/W °C/W °C/W °C AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 15 V) Max Value 40 200 Unit A mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA VGS = 0 Min. 30 1 10 ±100 Typ. Max. Unit V µA µA nA VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ± 20 V ON (*) Symbol VGS(th) RDS(on) ID(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance On State Drain Current Test Conditions VDS = VGS VGS = 10 V VGS = 5 V ID = 250 µA ID = 20 A ID = 20 A 40 Min. 1 0.013 Typ. Max. 2.5 0.0155 0.022 Unit V Ω Ω A VDS > ID(on) x RDS(on)max VGS = 10 V DYNAMIC Symbol gfs (*) Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitances Test Conditions VDS > ID(on) x RDS(on)max ID=20 A VDS = 25V f = 1 MHz VGS = 0 Min. 15 Typ. 20 Max. Unit S Ciss Coss Crss 2500 1200 400 pF pF pF 2/7 STB3015L/STP3015L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol td(on) tr Qg Parameter Turn-on Delay Time Rise Time Total Gate Charge Test Conditions VDD = 15 V ID = 20 A VGS = 5 V RG = 4.7 Ω (see test circuit, Figure 3) VDD= 24 V ID= 40 A VGS=5 V Min. Typ. 25 160 40 Max. Unit ns ns nC SWITCHING OFF Symbol td(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Vclamp = 24 V ID = 40 A RG = 4.7 Ω VGS = 5 V (see test circuit, Figure 5) Min. Typ. 25 120 155 Max. Unit ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM(•) VSD (*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD =40 A VGS = 0 50 0.9 3.5 Test Conditions Min. Typ. Max. 40 160 1.5 Unit A A V ns nC A ISD =40 A di/dt = 100 A/µs Tj = 150 °C VDD = 20 V (see test circuit, Figure 5) (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. . . 3/7 STB3015L/STP3015L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/7 STB3015L/STP3015L D2PAK MECHANICAL DATA DIM. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 mm. MIN. 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10 8.5 4.88 15 1.27 1.4 2.4 0.4 0º 8º 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 10.4 0.393 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 inch TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 0.315 0.334 0.208 0.625 0.055 0.068 0.126 0.015 5/7 STB3015L/STP3015L TO-220 MECHANICAL DATA DIM. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA mm. MIN. 4.40 1.23 2.40 1.27 0.49 0.61 1.14 1.14 4.65 2.4 10.0 16.4 13.0 2.65 15.25 6.2 3.5 3.75 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 TYP MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151 6/7 STB3015L/STP3015L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics © 2000 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 7/7