N-CHANNEL POWER MOSFET

STP14NK60Z - STP14NK60ZFP STB14NK60Z/-1 - STW14NK60Z N-CHANNEL 600V - 0.45Ω - 13.5A TO-220/FP-D²/I²PAK-TO-247 Zener-Protected SuperMESH™ MOSFET Table 1: General Features TYPE STP14NK60Z STP14NK60ZFP STB14NK60Z STB14NK60Z-1 STW14NK60Z ■ ■ ■ ■ ■ ■ Figure 1: Package ID 13.5 13.5 13.5 13.5 13.5 A A A A A Pw 160 W 40 W 160 W 160 W 160 W Ω Ω Ω Ω Ω VDSS 600 V 600 V 600 V 600 V 600 V RDS(on) < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 3 1 2 3 TO-220 TO-220P 1 2 TYPICAL RDS(on) = 0.45 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY 3 2 1 TO-247 3 1 3 12 D²PAK I²PAK DESCRIPTION Figure 2: Internal Schematic Diagram The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to www.DataSheet4U.com pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC ■ LIGHTING Table 2: Order Codes Part Number STP14NK60Z STP14NK60ZFP STB14NK60ZT4 STB14NK60Z-1 STW14NK60Z Marking P14NK60Z P14NK60ZFP B14NK60Z B14NK60Z W14NK60Z Package TO-220 TO-220FP D²PAK I²PAK TO-247 Packaging TUBE TUBE TAPE & REEL TUBE TUBE Rev. 4 September 2005 1/17 STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z Table 3: Absolute Maximum ratings Symbol Parameter Value TO-220/D²PAK/I²PAK TO-247 TO-220FP Unit VDS VDGR VGS ID ID IDM ( ) PTOT Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate-source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor 13.5 8.5 54 160 1.28 600 600 ± 30 13.5 (*) 8.5 (*) 54 (*) 40 0.32 4000 4.5 --55 to 150 2500 V V V A A A W W/°C V V/ns V °C VESD(G-S) Gate source ESD (HBM-C= 100pF, R= 1.5kΩ) dv/dt (1) VISO Tj Tstg Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Operating Junction Temperature Storage Temperature ( ) Pulse width limited by safe operating area (1) ISD ≤ 13.5A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, T j ≤ T JMAX. (*) Limited only by maximum temperature allowed Table 4: Thermal Data TO-220/D²PAK/I²PAK TO-247 TO-220FP Unit °C/W °C/W °C Rthj-case Thermal Resistance Junction-case Max Rthj-amb Tl Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 0.78 62.5 300 3.1 50 Table 5: Avalanche Characteristics Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 12 300 Unit A mJ Table 6: Gate-Source Zener Diode Symbol BVGSO Parameter Gate source Breakdown Voltage Test Conditions Igs= ± 1 mA (Open Drain) Min. 30 Typ. Max. Unit V PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/17 STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 7: On/Off Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 1mA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ± 30V VDS = VGS, ID = 100 µA VGS = 10V, ID = 6 A 3 3.75 0.45 Min. 600 1 50 ±10 4.5 0.5 Typ. Max. Unit V µA µA µA V Ω Table 8: Dynamic Symbol gfs (1) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 15 V, ID= 6 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 11 2220 240 57 122 26 18 62 13 75 13.2 38.6 Max. Unit S pF pF pF pF ns ns ns ns nC nC nC Coss eq. (3) Equivalent Output Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VGS = 0V, VDS = 0V to 480V VDD = 300 V, ID = 6 A, RG= 4.7 Ω, VGS = 10 V (Resistive Load see, Figure 21) VDD = 480V, ID = 12 A, VGS = 10V (see, Figure 24) Table 9: Source Drain Diode Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 12 A, VGS = 0 ISD = 12 A, di/dt = 100 A/µs VDD = 50 V, Tj = 25°C (see test circuit, Figure 22) ISD = 12 A, di/dt = 100 A/µs VDD = 50 V, Tj = 150°C (see test circuit, Figure 22) 490 4.7 19.3 664 6.8 20.5 Test Conditions Min. Typ. Max. 12 48 1.6 Unit A A V ns µC A ns µC A (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (2) Pulse width limited by safe operating area. (3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 3/17 STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z Figure 3: .Safe Operating Area For TO-220/ D²PAK/I²PAK Figure 6: Thermal Impedance For TO-220/ D²PAK/I²PAK Figure 4: Safe Operating Area For TO-220FP Figure 7: Thermal Impedance For TO-220FP Figure 5: Safe Operating Area For TO-247 Figure 8: Thermal Impedance For TO-247 4/17 STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z Figure 9: Output Characteristics Figure 12: Transfer Characteristics Figure 10: Transconductance Figure 13: Static Drain-source On Resistance Figure 11: Gate Charge vs Gate-source Voltage Figure 14: Capacitance Variations 5/17 STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z Figure 15: Normalized Gate Thereshold Voltage vs Temperature Figure 18: Normalized On Resistance vs Temperature Figure 16: Source-Drain Forward Characteristics Figure 19: Normalized BVDSS vs Temperature Figure 17: Maximum Avalanche Energy vs Temperature 6/17 STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z Figure 20: Unclamped Inductive Load Test Circuit Figure 23: Unclamped Inductive Wafeform Figure 21: Switching Times Test Circuit For Resistive Load Figure 24: Gate Charge Test Circuit Figure 22: Test Circuit For Inductive Load Switching and Diode Recovery Times 7/17 STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 8/17 STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0º 4.88 15 1.27 1.4 2.4 0.4 4º 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch 3 9/17 STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z TO-247 MECHANICAL DATA mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620 DIM. A A1 b b1 b2 c D E e L L1 L2 øP øR S 10/17 STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 11/17 STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 øP Q 12/17 STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3