N Channel Enchancement Mode MOSFET

www.DataSheet4U.com N Channel Enchancement Mode MOSFET 60V/60A DESCRIPTION ST6006S / ST6006 The ST6006 is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This ST6006 is densigned to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safetv margin against unexpected voltage transients. PIN CONFIGURATION TO-220-3L ST6006 TO-263-2L ST6006S APPLICATIONS Power Supplies Converters Power Motor controls Bridge Circuit FEATURE 20V/2.8A, RDS(ON) = 85m-ohm @VGS = 4.5V 20V/2.4A, RDS(ON) = 115m-ohm @VGS = 2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page 1 N Channel Enchancement Mode MOSFET 60V/60A ORDERING INFORMATION Part Number ST6006T220TG ST6006T220RG Package TO-220-3L TO-263-2L ST6006S / ST6006 Part Marking ST6006D ST6006 ABSOULTE MAXIMUM RATINGS (Ta = 25¢J Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150¢J ) TA=25¢J TA=70¢J Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient TA=25¢J TA=70¢J Symbol VDSS VGSS ID IDM IS PD TJ TSTG R£c JA Typical 60 +/-20 60 39 120 60 120 3.7 150 -55/150 40 62.5 Unit V V A A A W ¢J ¢J ¢J /W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page2 N Channel Enchancement Mode MOSFET 60V/60A ST6006S / ST6006 ELECTRICAL CHARACTERISTICS ( Ta = 25¢J Unless otherwise noted ) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current IDSS Symbol V(BR)DSS VGS(th) IGSS Condition VGS=0V,ID=10uA VDS=VGS,ID=50uA VDS=0V,VGS=20V VDS=60V,VGS=0V VDS=20V,VGS=0V TJ=125¢J VDS=60V,VGS=0V TJ=175¢J VDS=5V,VGS=10V VGS=10V,ID=30A VGS=10V,ID=30A TJ=125¢J VGS=10V,ID=30A TJ=175¢J VGS=5V,ID=30A VDS=15V,ID=30A IF=60A,VGS=0V VDS=30V,VGS=10V ID¡Ý 60A VDS=25V,VGS=0V F=1MHz 39 12 10 2000 400 115 12 36 34 10 Min Typ Max Unit 60 1.0 3.0 V V 100 nA 1 uA 50 On-State Drain Current Drain-source On-Resistance ID(on) 60 12 24 31 14 49 16 30 A RDS(on) m£[ 37 19 S 1.6 60 nC V Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time gfs VSD Qg Qgs Qgd Ciss Coss Crss pF 25 60 nS 60 25 td(on) tr td(off) tf VDD=10V,RL=5.5£[ ID=3.6A,VGEN=4.5V RG=6£[ Page3 N Channel Enchancement Mode MOSFET 60V/60A TO-220-3L PACKAGE OUTLINE ST6006 ST6006S / ST6006 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page4 N Channel Enchancement Mode MOSFET 60V/60 TO-263-2L PACKAGE OUTLINE ST6006S ST6006S / ST6006 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page 5 N Channel Enchancement Mode MOSFET 60V60A TYPICAL CHARACTERISTICS ST6006S / ST6006 Page 6 N Channel Enchancement Mode MOSFET 60V60A TYPICAL CHARACTERISTICS ST6006S / ST6006 Page 7 N Channel Enchancement Mode MOSFET 60V60A TYPICAL CHARACTERISTICS ST6006S / ST6006 Page 8