INVERTER GRADE THYRISTORS

www.DataSheet4U.com Bulletin I25233 10/06 ST173CPbF SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-200AB (A-PUK) All diffused design Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt High surge current capability Low thermal impedance High speed performance 330A Typical Applications Inverters Choppers Induction heating All types of force-commutated converters case style TO-200AB (A-PUK) Major Ratings and Characteristics Parameters IT(AV) @ Ths IT(RMS) @ Ths ITSM @ 50Hz @ 60Hz I2 t @ 50Hz @ 60Hz V DRM/V RRM tq range TJ ST173C..C 330 55 610 25 4680 4900 110 100 1000 to1200 15 to 30 - 40 to 125 Units A °C A °C A A KA2s KA2s V µs °C www.irf.com 1 ST173CPbF Series Bulletin I25233 10/06 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage Type number Code V DRM/V RRM, maximum repetitive peak voltage V ST173C..C 10 12 1000 1200 VRSM , maximum non-repetitive peak voltage V 1100 1300 I DRM/I RRM max. @ TJ = TJ max. mA 40 Current Carrying Capability Frequency 180oel 50Hz 400Hz 1000Hz 2500Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Heatsink temperature Equivalent values for RC circuit 760 730 600 350 50 V DRM 50 40 ITM 180oel 660 590 490 270 50 50 55 1200 1260 1200 850 50 V DRM 40 ITM 100μs 1030 1080 1030 720 50 55 5570 2800 1620 800 50 V DRM 40 ITM Units 4920 2460 1390 680 50 55 V A/μs °C A 47Ω / 0.22µF 47Ω / 0.22µF 47Ω / 0.22µF On-state Conduction Parameter I T(AV) Max. average on-state current @ Heatsink temperature I T(RMS) Max. RMS on-state current cooled I TSM Max. peak, one half cycle, non-repetitive surge current 4680 4900 3940 4120 I 2t Maximum I2t for fusing 110 100 77 71 I √t 2 ST173C..C 330 (120) 55 (85) 610 Units Conditions A °C 180° conduction, half sine wave double side (single side) cooled DC @ 25°C heatsink temperature double side t = 10ms A t = 8.3ms t = 10ms t = 8.3ms t = 10ms KA2s t = 8.3ms t = 10ms t = 8.3ms KA √s 2 No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max Maximum I √t for fusing 2 1100 t = 0.1 to 10ms, no voltage reapplied 2 www.irf.com ST173CPbF Series Bulletin I25233 10/06 On-state Conduction Parameter VTM V T(TO)1 Max. peak on-state voltage Low level value of threshold voltage V T(TO)2 High level value of threshold voltage r t1 ST173C..C 2.07 1.55 1.61 0.87 Units Conditions ITM= 600A, TJ = TJ max, t = 10ms sine wave pulse p V (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), TJ = TJ max. (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), TJ = TJ max. Low level value of forward slope resistance mΩ 0.77 600 1000 mA r t2 IH IL High level value of forward slope resistance Maximum holding current Typical latching current T J = 25°C, I T > 30A T J = 25°C, V A = 12V, Ra = 6Ω, I G = 1A Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current t d ST173C..C 1000 1.1 Min 15 Max 30 Units A/µs Conditions TJ = TJ max, VDRM = rated VDRM ITM = 2 x di/dt TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, t = 1µs p Typical delay time µs Resistive load, Gate pulse: 10V, 5Ω source TJ = TJ max, ITM = 300A, commutating di/dt = 20A/µs VR = 50V, tp = 500µs, dv/dt: see table in device code tq Max. turn-off time Blocking Parameter dv/dt I RRM I DRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current ST173C..C 500 40 Units V/μs mA Conditions TJ = TJ max. linear to 80% VDRM, higher value available on request TJ = TJ max, rated V DRM/V RRM applied Triggering Parameter PGM Maximum peak gate power ST173C..C 60 10 10 20 Units W A Conditions TJ = TJ max, f = 50Hz, d% = 50 TJ = TJ max, tp ≤ 5ms PG(AV) Maximum average gate power IGM +VGM -VGM IGT VGT I GD VGD Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Max. DC gate current required to trigger Max. DC gate voltage required to trigger Max. DC gate current not to trigger Max. DC gate voltage not to trigger V 5 200 3 20 0.25 mA TJ = TJ max, tp ≤ 5ms TJ = 25°C, VA = 12V, Ra = 6Ω V mA V TJ = TJ max, rated VDRM applied www.irf.com 3 ST173CPbF Series Bulletin I25233 10/06 Thermal and Mechanical Specification Parameter TJ T stg ST173C..C -40 to 125 -40 to 150 0.17 0.08 0.033 0.017 4900 (500) Units Conditions °C DC operation single side cooled K/W DC operation double side cooled DC operation single side cooled DC operation double side cooled N (Kg) g See Outline Table Max. operating temperature range Max. storage temperature range R thJ-hs Max. thermal resistance, junction to heatsink R thC-hs Max. thermal resistance, case to heatsink F Mounting force, ± 10% K/W wt Approximate weight Case style 50 TO - 200AB (A-PUK) ΔRthJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) Conduction angle 180° 120° 90° 60° 30° Sinusoidal conduction 0.015 0.018 0.024 0.035 0.060 0.016 0.019 0.024 0.035 0.060 Rectangular conduction 0.011 0.019 0.026 0.036 0.060 0.011 0.019 0.026 0.037 0.061 Units Conditions Single Side Double Side Single Side Double Side K/W TJ = TJ max. Ordering Information Table Device Code ST 1 17 2 3 3 C 4 12 5 C 6 H 7 K 8 1 9 10 P 11 1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn off 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - C = Puk Case TO-200AB (A-PUK) 7 - Reapplied dv/dt code (for tq test condition) 8 - tq code 9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads) 1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads) 2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads) 3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads) 10 - Critical dv/dt: None = 500V/µsec (Standard value) L = 1000V/µsec (Special selection) 11 - P = Lead Free dv/dt - tq combinations available dv/dt (V/µs) 15 18 t (µs) 20 q 25 30 20 CL CP CK CJ -50 -DP DK DJ DH 100 -EP EK EJ EH 200 -FP * FK * FJ FH 400 --HK HJ HH *Standard part number. All other types available only on request. 4 www.irf.com ST173CPbF Series Bulletin I25233 10/06 Outline Table ANODE TO GATE CREEPAGE DISTANCE: 7.62 (0.30) MIN. STRIKE DISTANCE: 7.12 (0.28) MIN. 19 (0.75) DIA. MAX. 0.3 (0.01) MIN. 13.7 / 14.4 (0.54 / 0.57) 0.3 (0.01) MIN. 19 (0.75) DIA. MAX. 38 (1.50) DIA MAX. GATE TERM. FOR 1.47 (0.06) DIA. PIN RECEPTACLE 2 HOLES 3.56 (0.14) x 1.83 (0.07) MIN. DEEP 6.5 (0.26) 4.75 (0.19) 25°± 5° Case Style TO-200AB (A-PUK) All dimensions in millimeters (inches) Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification) 42 (1.65) MAX. 28 (1.10) Maximum Allowable Heatsink T emperature (°C) 130 120 110 100 90 80 70 60 50 40 0 40 80 120 160 200 240 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Conduction Angle Maximum Allowable Heatsink T emperature (°C) S 173C..C S T eries (S ingle S ide Cooled) RthJ-hs(DC) = 0.17 K/ W 130 120 110 100 90 80 70 60 50 40 30 20 0 50 100 30° S 173C..C S T eries (S ingle S ide Cooled) R thJ-hs(DC) = 0.17 K/ W Conduction Period 60° 90° 120° 180° 150 200 250 DC 300 350 30° 60° 90° 120° 180° Average On-state Current (A) Fig. 2 - Current Ratings Characteristics www.irf.com 5 ST173CPbF Series Bulletin I25233 10/06 Maximum Allowable Heats T ink emperature (°C) Maximum Allowable Heatsink T emperature (°C) 130 120 110 100 90 130 120 110 100 90 80 70 60 50 40 30 20 0 100 200 30° S 173C..C S T eries (Double S Cooled) ide RthJ-hs(DC) = 0.08 K/ W S 173C..C S T eries (Double S Cooled) ide RthJ-hs(DC) = 0.08 K/ W Conduc tion Angle Conduction Period 80 70 60 50 40 30 0 50 100 150 200 250 300 350 400 Average On-state Current (A) Fig. 3 - Current Ratings Characteristics 30° 60° 90° 120° 180° 60° 120° 90° 180° 300 400 DC 500 600 700 Average On-state Current (A) Fig. 4 - Current Ratings Characteristics Maximum Average On-state Power Loss (W) 1000 900 800 700 600 500 400 Conduction Angle Maximum Average On-state Power Los (W) s 1400 1200 1000 800 600 RMS Limit Conduction Period 180° 120° 90° 60° 30° RMS Limit DC 180° 120° 90° 60° 30° 300 200 100 0 0 50 100 150 200 250 300 350 400 450 Average On-state Current (A) Fig. 5 - On-state Power Loss Characteristics 400 200 0 0 100 200 300 400 500 600 700 Average On-state Current (A) Fig. 6 - On-state Power Loss Characteristics S 173C..C S T eries TJ = 125°C S 173C..C S T eries TJ = 125°C Peak Half S Wave On-state Current (A) ine 4000 At Any R ated Load Condition And With Rated VRRM Applied Following S urge. Initial T = 125°C J @60 Hz 0.0083 s @50 Hz 0.0100 s Peak Half S Wave On-state Current (A) ine 4500 5000 3500 Maximum Non Repetitive S urge Current Versus Pulse T rain Duration. Control 4500 Of Conduction May Not Be Maintained. Initial T = 125°C J 4000 No Voltage Reapplied Rated VRRM Reapplied 3500 3000 2500 2000 S 173C..C S T eries 3000 2500 S 173C..C S T eries 2000 1 10 100 Numb er Of Eq ual Amplitud e Half Cycle Current Pulses (N) 1500 0.01 0.1 Pulse T rain Duration (s) 1 Fig. 7 - Maximum Non-repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-repetitive Surge Current Single and Double Side Cooled 6 www.irf.com ST173CPbF Series Bulletin I25233 10/06 T ransient T hermal Impedanc e Z thJ-hs (K/ W) 10000 Instantaneous On-state Current (A) S 173C..C S T eries 1 S 173C..C S T eries 0.1 1000 S teady S tate Value 0.01 R thJ-hs = 0.17 K/ W (S ingle S ide Cooled) R thJ-hs = 0.08 K/ W (Double S Cooled) ide 0.001 0.001 (DC Operation) 0.01 0.1 1 10 TJ= 25°C TJ= 125°C 100 1 1.5 2 2.5 3 3.5 4 4.5 Instantaneous On-state Voltage (V) Fig. 9 - On-state Voltage Drop Characteristics S quar