2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Module

www.DataSheet4U.com 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Module SST13LP05 SST13LP052.4 - 2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Preliminary Specifications FEATURES: • High Gain: – Typically 29 dB gain across 2.4-2.5 GHz – Typically 29-26 dB gain across 4.9-5.8 GHz • High linear output power: – >25 dBm P1dB (Pulsed single-tone signal) across 2.4-2.5 GHz – Meets 802.11b OFDM ACPR requirement up to 23.5 dBm across 2.4-2.5 GHz – Meets 802.11g OFDM ACPR requirement up to 23 dBm across 2.4-2.5 GHz – Added EVM ~4% up to 19 dBm for 54 Mbps 802.11g signal across 2.4-2.5 GHz – >24 dBm P1dB across 4.9-5.8 GHz – Meets 802.11a OFDM ACPR requirement up to 22.5 dBm across 4.9-5.8 GHz – Added EVM ~4% up to 18 dBm for 54 Mbps 802.11a signal across 4.9-5.8 GHz • High power-added efficiency/Low operating current for 802.11a/b/g applications – ~160 mA @ POUT = 19 dBm for 802.11g – ~235 mA @ POUT = 23.5 dBm for 802.11b – ~270 mA @ POUT = 18 dBm for 802.11a • Built-in Ultra-low IREF power-up/down control – IREF < 2 mA • High-speed power-up/down – Turn on/off time (10%-90%) <100 ns – Typical power-up/down delay with driver delay included <200 ns • High temperature stability – ~1 dB gain/power variation between 0°C to +85°C across 2.4-2.5 GHz – ~3/1 dB gain/max linear power variation between 0°C to +85°C across 4.9-5.8 GHz – ±0.5 dB detector variation between 0°C to +85°C • Low shut-down current (< 2 µA) • 20 dB dynamic range on-chip power detection • Built-in input/output matching • Packages available – 16-contact LGA package (4mm x 4mm) • All non-Pb (lead-free) devices are ROHS compliant. APPLICATIONS: • • • • • • WLAN (IEEE 802.11a/g/b) Japanese WLAN HyperLAN2 Multimedia Home RF Cordless phones PRODUCT DESCRIPTION The SST13LP05 is a fully matched, dual-band power amplifier module (PAM) based on the highly-reliable InGaP/ GaAs HBT technology. This PAM provides excellent RF performance, temperature-stable power detectors, and low-current analog on/off control interfaces. The SST13LP05 provides stable RF and power detector performance over a large VCC power supply variation, with an ultra-low shut-down current. With a near-zero Rest of Bill of Materials (RBOM), the SST13LP05 is designed for 802.11a/b/g applications covering frequency bands 2.4-2.5 GHz and 4.9-5.8 GHz for U.S., European, and Japanese markets. The SST13LP05 has excellent linearity, typically 4% added Error Vector Magnitude (EVM) at 19 dBm output power. This output power is essential for 54 Mbps 802.11g operation while meeting 802.11g spectrum mask at 23 dBm and 802.11b spectrum mask at 23.5 dBm. For 802.11a operation, the SST13LP05 typically demonstrates <4% added EVM at 18 dBm output power while meeting 802.11a spectrum mask at 22.5 dBm. The SST13LP05 also has wide-range (>20 dB), temperature-stable (±0.5 dB across 0°C to +85°C), directionallycoupled, power detectors which provide a reliable and costeffective solution to board-level power control. The device’s analog on/off control can be driven by an analog or digital control signal from either a transceiver or baseband chip. These features, coupled with low operating current, make the SST13LP05 ideal for the final stage power amplification in both battery-powered 802.11a/b/g WLAN transmitters and access point applications. The SST13LP05 is offered in a 16-contact LGA package. See Figure 2 for pin assignments and Table 1 for pin descriptions. ©2006 Silicon Storage Technology, Inc. S71318-00-000 12/06 1 The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc. These specifications are subject to change without notice. www.DataSheet4U.com 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP05 Preliminary Specifications FUNCTIONAL BLOCKS VREG_LB VCC_LB 14 16 15 13 Det_LB NC NC RFIN_LB RFIN_HB NC 1 2 3 4 Bias Network 12 NC 11 RFOUT_LB 10 RF OUT_HB Bias Network 9 NC 5 VREG_HB 6 7 VCC_HB 8 Det_HB NC 1318 B1.0 FIGURE 1: Functional Block Diagram ©2006 Silicon Storage Technology, Inc. S71318-00-000 12/06 2 www.DataSheet4U.com 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP05 Preliminary Specifications PIN ASSIGNMENTS VREG_LB VCC_LB 16 NC RFIN_LB RFIN_HB NC 15 14 13 12 NC 1 Top View 2 3 4 5 VREG_HB (contacts facing down) Det_LB NC 11 RFOUT_LB 10 RFOUT_HB 9 NC RF and DC GND 0 6 NC 7 VCC_HB 8 Det_HB 1318 P1.1 FIGURE 2: Pin Assignments for 16-contact LGA ©2006 Silicon Storage Technology, Inc. S71318-00-000 12/06 3 www.DataSheet4U.com 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP05 Preliminary Specifications PIN DESCRIPTIONS TABLE 1: Pin Description Symbol GND NC RFIN_LB RFIN_HB NC VREG_HB NC VCC_HB DET_HB NC RFOUT_HB RFOUT_LB NC DET_LB VCC_LB NC VREG_LB Pin No. 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Power Supply No Connection Power Supply PWR No Connection Power Supply Power Supply No Connection O PWR No Connection Power Supply No Connection Power Supply PWR O PWR Pin Name Ground No Connection I I Type Function Ground Pad Unconnected Pin 50Ω Matched RF Input for Low Band, AC coupled 50Ω Matched RF Input for High Band, AC coupled Unconnected Pin Analog current control for High Band Unconnected Pin VCC Power Supply for High Band Detector Voltage Output for High Band Unconnected Pin O/PWR 50Ω Matched RF output for High Band O/PWR 50Ω Matched RF output for Low Band Unconnected Pin Detector Voltage Output for Low Band VCC Power Supply for Low Band Unconnected Pin Analog current control for Low Band T1.0 1318 ©2006 Silicon Storage Technology, Inc. S71318-00-000 12/06 4 www.DataSheet4U.com 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP05 Preliminary Specifications ELECTRICAL SPECIFICATIONS The AC and DC specifications for the power amplifier interface signals. Refer to Tables 2 and 4 for the DC voltage and current specifications. Refer to Figures 3 through 22 for the RF performance. Absolute Maximum Stress Ratings Applied conditions greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability. Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +3.6V Reference Voltage (VREF) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +3.3V DC supply current (ICC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mA Operating Temperature (TA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +85ºC Storage Temperature (TSTG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +120ºC Maximum Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150ºC ©2006 Silicon Storage Technology, Inc. S71318-00-000 12/06 5 www.DataSheet4U.com 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP05 Preliminary Specifications For 802.11b/g Operation TABLE 2: DC Electrical Characteristics Symbol VCC ICC Supply Voltage Supply Current for 802.11g, 19 dBm for 802.11b, 23.5 dBm IREG VREG Analog control current at On state Reference Voltage 2.95 160 235 2 mA mA mA V T2.0 1318 Parameter Min. 3.0 Typ 3.3 Max. 3.6 Unit V TABLE 3: AC Electrical Characteristics for Configuration Symbol FL-U G GVAR1 GVAR2 ACPR Added EVM 2f, 3f, 4f, 5f Parameter Frequency range Small signal gain Gain variation over temperature 0°C – 85°C Gain flatness over any 50 MHz bandwidth Meet 11b spectrum mask Meet 11g OFDM 54 Mbps spectrum mask POUT = 19 dBm with 54Mbps 11g OFDM signal when operating at 3.3V Vcc Harmonics at POUT = 20 dBm Spurious non-harmonics at POUT = 20 dBm In/Out return loss at 50 Ω nominal impedance 6 Min. 2.4 28 -1 -0.3 22 22 23 23 -28 4 -50 -60 29 1 0.3 Typ Max. 2.5 Unit GHz dB dB dB dBm dBm dB % dBc dBc dB T3.0 1318 ©2006 Silicon Storage Technology, Inc. S71318-00-000 12/06 6 www.DataSheet4U.com 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP05 Preliminary Specifications For 802.11a Operation TABLE Symbol VCC ICC IREG VREG Supply Voltage Supply Current for 802.11a, 18 dBm Analog control current at On state Reference Voltage 2.95 270 2 mA μA V T4.1 1318 4: DC Electrical Characteristics Parameter Min. 3 Typ 3.3 Max. 3.6 Unit V TABLE 5: AC Electrical Characteristics for Configuration Symbol FL-U G GVAR1 GVAR2 ACPR Added EVM 2f, 3f, 4f, 5f Parameter Frequency range Small signal gain across 4.9- 5.8 GHz Gain variation over temperature 0°C – 85°C Gain flatness over any 100 MHz bandwidth Meet 11a OFDM 54 Mbps spectrum mask POUT = 18 dBm with 54Mbps 11aOFDM signal when operating at 3.3V Vcc Harmonics at 20 dBm Min. 4.92 26 -1 -0.5 22 22.5 -28 4 -45 1 0.5 Typ Max. 5.805 Unit GHz dB dB dB dBm dB % dBc T5.1 1318 ©2006 Silicon Storage Technology, Inc. S71318-00-000 12/06 7 www.DataSheet4U.com 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP05 Preliminary Specifications Typical Low Band Performance for 802.11b/g Test Conditions: VCC = 3.3V, TA = 25°C, VREF = 2.95V unless otherwise noted S11 versus Frequency 0 -5 -10 -15 -20 -25 -30 0.0 0 -10 -20 S12 versus Frequency S11 (dB) S12 (dB) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 -30 -40 -50 -60 -70 -80 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 Frequency (GHz) Frequency (GHz) S21 versus Frequency 40 30 20 0