Advanced Power MOSFET

Advanced Power MOSFET w w w .D at FEATURES Sh a et e 4U . om c SSS6N70A BVDSS = 700 V RDS(on) = 1.8 Ω ID = 4 A TO-220F Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 700V Low RDS(ON) : 1.552 Ω (Typ.) 1 2 3 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Ο Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Avalanche Current Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C ) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8“ from case for 5-seconds Thermal Resistance Symbol R R θJC θJA w w w .D t a S a Ο e h 1 O 2 O 1 O 1 O 3 O Ο t e U 4 Value 700 4 2.5 24 + 30 _ 560 4 4 2.5 40 0.32 1.Gate 2. Drain 3. Source .c m o Units V A A V mJ A mJ V/ns W W/ C Ο - 55 to +150 Ο 300 C Characteristic Junction-to-Case Junction-to-Ambient Typ. --- Max. 3.13 62.5 Units Ο C/W ©1999 Fairchild Semiconductor Corporation w w w .D at Sh a et e 4U . om c Rev. B SSS6N70A Electrical Characteristics (TC=25 Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge Ο N-CHANNEL POWER MOSFET C unless otherwise specified) Min. Typ. Max. Units 700 -2.0 -----------------0.79 ------3.22 100 45 18 23 76 26 51 8.3 23.1 --4.0 100 -100 25 250 1.8 -115 55 45 55 160 60 67 --nC ns µA Ω V Ο Test Condition VGS=0V,ID=250µA See Fig 7 VDS=5V,ID=250µA VGS=30V VGS=-30V VDS=700V VDS=560V,TC=125 C VGS=10V,ID=2A VDS=50V,ID=2A 4 O* 4 O Ο V/ C ID=250µA V nA Ω pF 920 1200 VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=350V,ID=6A, RG=11.5§Ù See Fig 13 4 5 OO VDS=560V,VGS=10V, ID=6A 4 5 See Fig 6 & Fig 12 O O Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge 1 O 4 O Min. Typ. Max. Units --------440 4.05 4 24 1.4 --A V ns µC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C ,IS=4A,VGS=0V TJ=25 C ,IF=6A diF/dt=100A/µs Ο Ο 4 O Notes ; 1 O Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature 2 O L=65mH, I AS=4A, VDD=50V, RG=27Ω, Starting T J =25 C 3 _ _ _ O ISD < 6A, di/dt <140A/ µs, VDD