DUAL ASYMMETRICAL OVERVOLTAGE PROTECTION FOR TELECOM LINE

® SSRP130B1 DUAL ASYMMETRICAL OVERVOLTAGE PROTECTION FOR TELECOM LINE Application Specific Discretes A.S.D.™ MAIN APPICATIONS Where asymmetrical protection against lightning strikes and other transient overvoltages is required : Solid-State relays SLIC with integrated ring generator DESCRIPTION The SSRP130B1 is a dual asymmetrical transient voltage suppressor designed to protect a solid-state ring relay or SLICs with integrated ring generator from overvoltages. The asymmetrical protection configuration is necessary to allow the use of all different types of ringing schemes. FEATURES Dual bidirectional asymmetrical protection : Stand-off voltages : + 130V for positive voltages - 185V for negative voltages Peak pulse current : IPP = 2 * 25A (5 / 310 µs) Holding current : 150mA SO8 FUNCTIONAL DIAGRAM TIP 1 8 GND NC 2 7 GND NC 3 6 GND RING 4 5 GND COMPLIES WITH THE FOLLOWING STANDARDS: ITU-T K20 VDE0433 VDE0878 IEC 1000-4-5 FCC Part 68 BELLCORE TR-NWT-001089 Peak Surge Voltage (V) 1000 2000 1500 Level 2 1500 800 2500 1000 Voltage Waveform (µs) 10/700 10/700 1.2/50 10/700 1.2/50 10/160 10/560 2/10 10/1000 Current Waveform (µs) 5/310 5/310 1/20 5/310 8/20 10/160 10/560 2/10 10/1000 Admissible Ipp (A) 25 25 35 25 25 29 21 70 15 Necessary Resistor (Ω) 40 3 45 30 30 57 TM: ASD is trademarks of STMicroelectronics. July 1998 - Ed: 4A SSRP130B1 APPLICATION INFORMATION Fig 1 : Topologyof the classical line card protection. Fig 2 : Classical use of the SSRP130B1. PTC R PTC R Tip Tip SSRP130B1 2nd 1st LINE PTC stage R SLIC Line stage SLIC PTC R (*) Ring Ring Ring generator (*) SLIC with integrated ring generator or solid state relay. The classical line card requires protection before the ring relay and a second one for the SLIC (fig.1). The use of new SLICs with integrated ring generator or board based on solid state ring relay suppresses this second protection (Fig. 2). Then the only remaining stage, located between the line and the ring relay, has to optimize the protection. The classical symmetrical first stage protector becomes not sufficient to avoid any circuit destructionduring surges. The SSRP130B1 device takes into account this fact and is based on asymmetrical voltage characteristics (Fig.3a). The ring signal being shifted back by the battery voltage, the SSRP130B1 negative breakover value Vbo- is greater than the positive one Vbo+. This point guaranteesa protection operationvery close to the peak of the normal operating voltage without any disturbance of the ring signal. Fig 3 : SSRP130B1 electrical characteristics. a : Line to ground characteristics. b : Line to line characteristics. I VboVbo+ V VBR VBR - In addition with the 2 crowbar functions which perform the protection of both TIP and RING lines versus ground, a third cell assumes the differential mode protection of the SLIC. The breakdown voltage values of this third cell are the same for 2/7 both positive and negative parts of the characteristics and are equivalent to the negative breakdown voltage value of the TIP and RING lines versus GND cells (Fig.3 b). SSRP130B1 ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) Symbol IPP Parameter Peak pulse current (see note 1) 10/1000 µs 5/310µs 1/20µs 2/10µs tp = 0.2 s tp = 5 s tp = 900 s Value 2x15 2x25 2x35 2x70 7.5 4.0 1.5 0 to + 70 - 55 to + 150 + 150 260 Unit A ITSM Non repetitive surge peak on-state current (F=50Hz) Operating temperature range Storage temperature range Maximum operating junction temperature Maximum lead temperature for soldering during 10s A Top Tstg Tj TL °C °C °C °C Note 1 : Pulse waveform : 10/1000µs tr=10µs 5/310µs tr=5µs 1/20µs tr=1µs 2/10µs tr=2µs % I PP tp=1000µs tp=310µs tp=20µs tp=10µs 100 50 0 tr tp t THERMAL RESISTANCE Symbol Rth (j-a) Junction to ambient Parameter Value 170 Unit °C/W ELECTRICAL CHARACTERISTICS (Tamb = 25°C) Symbol VR IR VBR VBO IH IBO IPP C Parameter Stand-off voltage Leakage current at stand-off voltage Breakdown voltage Breakover voltage Holding current Breakover current Peak pulse current Capacitance IBO IH IR VR I IPP V VBR VBO 3/7 SSRP130B1 ELECTRICAL CHARACTERISTICS between TIP and GND, RING and GND (Tamb=25°C) Symbol VBO Parameter Breakover voltage (note 2) Test conditions (note 1) Positive voltage 50Hz 10/700µs 1.2/50µs 2/10µs Negative voltage 50Hz 10/700µs 1.2/50µs 2/10µs IBO IH IR C Breakover current Holding current Leakage current (note 3) Capacitance Positive voltage Negative voltage Positive polarity Negative polarity VR = +130 V VR = - 185 V F = 100kHz, V = 100mV, VR = 0V 110 110 150 150 10 10 100 280 235 240 340 mA mA µA pF 200 175 180 250 Min Max Unit V ELECTRICAL CHARACTERISTICS between TIP and RING (Tamb=25°C) Symbol IR C Note 1 : Note 2 : Note 3 : Parameter Leakage current (note 3) Capacitance Test conditions VR = +185 V VR = - 185 V F = 100kHz, V = 100mV, VR = 0V Min Max 10 10 100 Unit µA pF Positive voltage means between T and G, or between R and G Negative voltage means between G and T, or between G and T See test circuit for VBO parameters IR measured at VR guarantees V BR > VR Fig. 4 : Surge peak current versus overload duration (maximum values). 15 ITSM(A) F=50Hz Tj initial=25°C 10 5 t(s) 0.01 0.1 1 10 100 1000 4/7 SSRP130B1 FUNCTION HOLDING CURRENT (IH) TEST CIRCUIT (GO-NO GO TEST) R D.U.T. V BAT = - 48 V Surge generator - VP This is a GO-NOGO test which allows to confirm the holding current (IH) level in a functional test circuit. TEST PROCEDURE : 1) Adjust the current level at the IH value by short circuiting the D.U.T. 2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000 ms. 3) The D.U.T will come back off-state within 50 ms max. TEST CIRCUIT FOR VBO parameters : (VP is defined in unload condition) R4 TIP R2 RING R3 L VP C1 R1 C2 G ND Pulse (µs) tr 10 1.2 2 tp 700 50 10 Vp (V) 1000 1500 2500 C1 (µF) 20 1 10 C2 (nF) 200 33 0 L (µH) 0 0 1.1 R1 (Ω) 50 76 1.3 R2 (Ω) 15 13 0 R3 (Ω) 25 25 3 R4 (Ω) 25 25 3 IPP (A) 25 30 38 Rp (Ω) 0 10 62 5/7 SSRP130B1 ORDER CODE SSRP 130 B 1 RL PACKAGING: RL = tape and reel. = tube SOLID STATE RELAY PROTECTION PACKAGE: 1 = SO8 Plastic. STAND-OFF VOLTAGE MARKING Types SSRP130B1 Package SO8 Marking SSR130 PACKAGE MECHANICAL DATA. SO8 Plastic MARKING : Logo, Date Code, Part Number. REF. A a1 a2 b b1 C c1 D E e e3 F L M S Packaging : Products supplied in antistatic tubes or tape and reel. Weight : 0.08g 6/7 DIMENSIONS Millimetres Inches Min. 0.1 0.35 0.19 0.50 45°(typ) 4.8 5.8 1.27 3.81 3.8 0.4 4.0 0.15 1.27 0.016 0.6 8° (max) 5.0 6.2 0.189 0.228 0.050 0.150 0.157 0.050 0.024 0.197 0.244 Typ. Max. Min. 1.75 0.25 0.004 1.65 0.48 0.014 0.25 0.007 0.020 Typ. Max. 0.069 0.010 0.065 0.019 0.010 SSRP130B1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 7/7