Advanced Power MOSFET

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 800V Low RDS(ON) : 1.472 Ω (Typ.) 1 2 3 SSP6N80A BVDSS = 800 V RDS(on) = 2.0 Ω ID = 6 A TO-220 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8“ from case for 5-seconds Ο Ο Ο Value 800 6 3.8 1 O Units V A A V mJ A mJ V/ns W W/ C Ο 24 + 30 _ 480 6 16 2.0 160 1.28 - 55 to +150 Ο O 1 O 1 O 3 O 2 C 300 Thermal Resistance Symbol R R R θJC θCS θJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -- Max. 0.78 -62.5 Units Ο C/W Rev. B ©1999 Fairchild Semiconductor Corporation SSP6N80A Ο N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25 C unless otherwise specified) Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge Min. Typ. Max. Units 800 -2.0 -----------------0.93 ------4.63 140 57 23 40 92 34 67 11.2 29.6 --3.5 100 -100 25 250 2.0 -165 66 55 90 195 80 88 --nC ns µA Ω Ω pF V V/ C V nA Ο Test Condition VGS=0V,ID=250µA ID=250µA VGS=30V VGS=-30V VDS=800V VDS=640V,TC=125 C VGS=10V,ID=0.85A VDS=50V,ID=0.85A 4 O* 4 O Ο See Fig 7 VDS=5V,ID=250µA 1500 1950 VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=400V,ID=2A, RG=16 Ω See Fig 13 45 OO VDS=640V,VGS=10V, ID=2A See Fig 6 & Fig 12 45 OO Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge 1 O 4 O Min. Typ. Max. Units --------520 6.66 6 24 1.4 --A V ns µC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS=6A,VGS=0V TJ=25 C,IF=7A diF/dt=100A/µs 4 O Ο Ο Notes ; 1 O Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature 2 L=25mH, I =6A, V =50V, R =27Ω, Starting T =25 C O AS DD G J 3 _ _ _ O ISD < 7A, di/dt <150A/ µs, VDD