Advanced Power MOSFET

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 700V Low RDS(ON) : 1.552 Ω (Typ.) 1 2 3 SSP6N70A BVDSS = 700 V RDS(on) = 1.8 Ω ID = 6 A TO-220 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8“ from case for 5-seconds Ο Ο Ο Value 700 6 3.8 24 1 O 2 O 1 O 1 O 3 O Units V A A V mJ A mJ V/ns W W/ C Ο 582 6 13 2.5 130 1.04 - 55 to +150 Ο C 300 Thermal Resistance Symbol R θJC R θCS R θJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -Max. 0.96 -62.5 Ο Units C/W Rev. B ©1999 Fairchild Semiconductor Corporation SSP6N70A Electrical Characteristics (TC=25 C unless otherwise specified) Ο N-CHANNEL POWER MOSFET Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(“ Miller” ) Charge Min. Typ. Max. Units 700 -2.0 -----------------0.79 ------4.12 100 45 18 23 76 26 51 8.3 23.1 --4.0 100 -100 25 250 1.8 -115 55 45 55 160 60 67 --nC ns µA Test Condition VGS=0V,ID=250 µA See Fig 7 VDS=5V,ID=250 µA VGS=30V VGS=-30V VDS=700V VDS=560V,TC=125 C VGS=10V,ID=3A VDS=50V,ID=3A 4 O* 4 O Ο V Ο V/ C ID=250 µA V nA Ω Ω pF 920 1200 VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=350V,ID=6A, RG=11.5Ω See Fig 13 VDS=560V,VGS=10V, ID=6A See Fig 6 & Fig 12 4 5 OO 4 5 OO Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge 1 O 4 O Min. Typ. Max. Units --------440 4.05 6 24 1.4 --A V ns µC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS=6A,VGS=0V TJ=25 C,IF=6A diF/dt=100A/µs Ο Ο 4 O Notes ; 1 O Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature 2 O L=30mH, I AS=6A, VDD=50V, RG=27Ω, Starting T J =25 C 3 _ _ _ O ISD < 6A, di/dt <140A/ µs, VDD