600V N-Channel MOSFET

SSP4N60B/SSS4N60B SSP4N60B/SSS4N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. Features • • • • • • • 4.0A, 600V, RDS(on) = 2.5Ω @VGS = 10 V Low gate charge ( typical 22 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche tested Improved dv/dt capability TO-220F package isolation = 4.0kV (Note 6) D G G DS TO-220 SSP Series GD S TO-220F SSS Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) SSP4N60B 600 4.0 2.5 16 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) SSS4N60B 4.0 * 2.5 * 16 * 240 4.0 10 5.5 Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 100 0.8 -55 to +150 300 33 0.26 * Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Max. Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient Max. SSP4N60B 1.25 0.5 62.5 SSS4N60B 3.79 -62.5 Units °C/W °C/W °C/W ©2002 Fairchild Semiconductor Corporation Rev. B, June 2002 SSP4N60B/SSS4N60B Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 600 ------0.65 ------10 100 100 -100 V V/°C µA µA nA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 2.0 A VDS = 40 V, ID = 2.0 A (Note 4) 2.0 --- -2.0 4.7 4.0 2.5 -- V Ω S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---710 65 14 920 85 19 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 480 V, ID = 4.0 A, VGS = 10 V (Note 4, 5) VDD = 300 V, ID = 4.0 A, RG = 25 Ω (Note 4, 5) -------- 20 55 70 55 22 4.8 8.5 50 120 150 120 29 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 4.0 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 4.0 A, dIF / dt = 100 A/µs (Note 4) ------ ---330 2.67 4.0 16 1.4 --- A A V ns µC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 27.5mH, IAS = 4.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 4.0A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature 6. Only for back side in Viso = 4.0kV and t = 0.3s ©2002 Fairchild Semiconductor Corporation Rev. B, June 2002 SSP4N60B/SSS4N60B Typical Characteristics 10 1 ID, Drain Current [A] 10 0 ID, Drain Current [A] VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V Top : 10 1 150 C 10 0 o 25 C -55 C o o 10 -1 ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = 40V 2. 250μ s Pulse Test 10 -1 10 -1 10 0 10 1 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 12 10 10 1 RDS(ON) [Ω ], Drain-Source On-Resistance 8 6 VGS = 20V IDR, Reverse Drain Current [A] VGS = 10V 10 0 4 150℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test 2 ※ Note : TJ = 25℃ 0 0 2 4 6 8 10 12 10 -1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 1500 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 12 10 VDS = 120V VDS = 300V 1000 VGS, Gate-Source Voltage [V] Capacitance [pF] Ciss 8 VDS = 480V 6 500 Coss Crss ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 4 2 ※ Note : ID = 4.0 A 0 -1 10 0 10 0 10 1 0 4 8 12 16 20 24 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics ©2002 Fairchild Semiconductor Corporation Rev. B, June 2002 SSP4N60B/SSS4N60B Typical Characteristics (Continued) 1.2 3.0 2.5 BV DSS , (Normalized) Drain-Source Breakdown Voltage RDS(ON) , (Normalized) Drain-Source On-Resistance 1.1 2.0 1.0 1.5 1.0 0.9 ※ Notes : 1. VGS = 0 V 2. ID = 250 μ A 0.5 ※ Notes : 1. VGS = 10 V 2. ID = 2.0 A 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation 10 2 Operation in This Area is Limited by R DS(on) 1 Operation in This Area is Limited by R DS(on) 10 1 10 100 µs 10 ms ID, Drain Current [A] ID, Drain Current [A] 1 ms 1 ms 10 ms 10 0 100 µs 10 0 DC 100 ms DC 10 -1 ※ Notes : 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse o 10 -1 ※ Notes : 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse o 10 -2 10 0 -2 10 10 1 10 2 10 3 10 0 10 1 10 2 10 3 VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 9-1. Maximum Safe Operating Area for SSP4N60B Figure 9-2. Maximum Safe Operating Area for SSS4N60B 4 3 ID, Drain Current [A] 2 1 0 25 50 75 100 125 150 TC, Case Temperature [℃] Figure 10. Maximum Drain Current vs Case Temperature ©2002 Fairchild Semiconductor Corporation Rev. B, June 2002 SSP4N60B/SSS4N60B Typical Characteristics (Continued) (t), T h e rm a l R e s p o n s e 10 0 D = 0 .5 0 .2 0 .1 10 -1 ※ N o te s : 1 . Z θ J C (t) = 1 .2 5 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) 0 .0 5 PDM 0 .0 2 0 .0 1 s in g le p u ls e θ JC Z t1 t2 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] Figure 11-1. Transient Thermal Response Curve for SSP4N60B (t), T h e rm a l R e s p o n s e D = 0 .5 10 0 0 .2 0 .1 0 .0 5 ※ N o te s : 1 . Z θ J C (t) = 3 .7 9 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) 10 -1 0 .0 2 0 .0 1 PDM t1 s in g le p u ls e Z θ JC t2 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] Figure 11-2. Transient Thermal Response Curve for SSS4N60B ©2002 Fairchild Semiconductor Corporation Rev. B, June 2002 SSP4N60B/SSS4N60B Gate Charge Test Circuit & Waveform 50KΩ 12V 200nF 300nF Same Type as DUT VDS VGS Qg 10V Qgs Qgd VGS DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS VGS RG RL VDD VDS 90% 10V DUT VGS 10% td(on) t on tr td(off) t off tf Unclamped Inductive Switching Test Circuit & Waveforms L VDS ID RG DUT tp BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD VDD tp ID (t) VDS (t) Time 10V ©2002 Fairchild Semiconductor Corporation Rev. B, June 2002 SSP4N60B/SSS4N60B Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG Same Type as DUT VDD VGS • dv/dt controlled by RG • ISD controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2002 Fairchild Semiconductor Corporation Rev. B, June 2002 SSP4N60B/SSS4N60B Package Dimensions TO-220 9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 (8.70) ø3.60 ±0.10 (1.70) 4.50 ±0.20 1.30 –0.05 +0.10 9.20 ±0.20 (1.46) 13.08 ±0.20 (1.00) (3.00) 15.90 ±0.20 1.27 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 10.08 ±0.30 18.95MAX. (3.70) (45° ) 0.50 –0.05 +0.10 2.40 ±0.20 10.00 ±0.20 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B, June 2002 SSP4N60B/SSS4N60B Package Dimensions (Continued) TO-220F 3.30 ±0.10 10.16 ±0.20 (7.00) ø3.18 ±0.10 2.54 ±0.20 (0.70) 6.68 ±0.20 15.80 ±0.20 (1.00x45°) MAX1.47 9.75 ±0.30 0.80 ±0.10 (3 ) 0° 0.35 ±0.10 2.54TYP [2.54 ±0.20] #1 0.50 –0.05 2.54TYP [2.54 ±0.20] 4.70 ±0.20 +0.10 2.76 ±0.20 9.40 ±0.20 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B, June 2002 15.87 ±0.20 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not inten