(SSM2475 / SSM2275) Rail-to-Rail Output Audio Amplifiers



Part  Number SSM-2275
Manufacturer Analog Devices
Semiconductor DataSheet

DataSheet View

a FEATURES Single or Dual-Supply Operation Excellent Sonic Characteristics Low Noise: 7 nV/√Hz Low THD: 0.0006% Rail-to-Rail Output High Output Current: 50 mA Low Supply Current: 1.7 mA/Amplifier Wide Bandwidth: 8 MHz High Slew Rate: 12 V/ s No Phase Reversal Unity Gain Stable Stable Parameters Over Temperature APPLICATIONS Multimedia Audio Professional Audio Systems High Performance Consumer Audio Microphone Preamplifier MIDI Instruments GENERAL DESCRIPTION OUT A 1 –IN A +IN A V– 2 3 4 Rail-to-Rail Output Audio Amplifiers SSM2275/SSM2475* PIN CONFIGURATIONS 8-Lead Narrow Body SOIC (SO-8) 8 V+ 14-Lead Narrow Body SOIC (R-14) OUT A 1 –IN A 2 +IN A 3 V+ 4 +IN B 5 –IN B 6 OUT B 7 14 OUT D 13 –IN D 12 +IN D SSM2275 (Not to Scale) 7 6 5 OUT B –IN B +IN B SSM2475 (Not to Scale) 11 V– 10 +IN C 9 8 –IN C OUT C 8-Lead microSOIC (RM-8) OUT A –IN A +IN A V– 1 8 V+ OUT B –IN B +IN B OUT A –IN A +IN A V+ +IN B –IN B OUT B 14-Lead TSSOP (RU-14) 1 14 OUT D –IN D +IN D V– +IN C –IN C OUT C SSM2275 4 5 SSM2475 7 8 The SSM2275 and SSM2475 use the Butler Amplifier front end, which combines both bipolar and FET transistors to offer the accuracy and low noise performance of bipolar transistors and the slew rates and sound quality of FETs. This product family includes dual and quad rail-to-rail output audio amplifiers that achieve lower production costs than the industry standard OP275 (the first Butler Amplifier offered by Analog Devices). This lower cost amplifier also offers operation from a single 5 V supply, in addition to conventional ± 15 V supplies. The ac performance meets the needs of the most demanding audio applications, with 8 MHz bandwidth, 12 V/µs slew rate and extremely low distortion. The SSM2275 and SSM2475 are ideal for application in high performance audio amplifiers, recording equipment, synthesizers, MIDI instruments and computer sound cards. Where cascaded stages demand low noise and predictable performance, SSM2275 and SSM2475 are a cost effective solution. Both are stable even when driving capacitive loads. The ability to swing rail-to-rail at the outputs (see Applications section) and operate from low supply voltages enables designers to attain high quality audio performance, even in single supply systems. The SSM2275 and SSM2475 are specified over the extended industrial (–40°C to +85°C) temperature range. The SSM2275 is available in 8-lead plastic DIPs, SOICs, and microSOIC surfacemount packages. The SSM2475 is available in narrow body SOICs and thin shrink small outline (TSSOP) surface-mount packages. *Protected by U.S. Patent No. 5,101,126. 8-Lead Plastic DIP (N-8) OUT A –IN A +IN A V– 1 2 3 4 (Not to Scale) 8 7 6 5 V+ OUT B –IN B +IN B SSM2275 REV. A Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. One Technology Way, P.O. Box 9106, Norwood. MA 02062-9106, U.S.A. Tel: 781/329-4700 World Wide Web Site: http://www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 1999 SSM2275/SSM2475–SPECIFICATIONS ELECTRICAL CHARACTERISTICS (V = S 15 V, T A = Conditions 25 C, VCM = 0 V unless otherwise noted) Min Typ 1 1 250 300 5 15 –14 80 80 100 80 14 14.5 100 100 240 120 14.5 14.7 –14 –14.6 –14.3 ± 50 ± 40 110 105 1.7 1.75 0.0006 12 8 128 8 <1 Max 4 6 400 500 75 125 +14 Units mV mV nA nA nA nA V dB V/mV V/mV V/mV V V V V V mA mA dB dB mA mA % V/µs MHz dB nV/√Hz pA/√Hz Parameter INPUT CHARACTERISTICS Offset Voltage Input Bias Current Input Offset Current Input Voltage Range Common-Mode Rejection Ratio Symbol VOS IB IOS VIN CMRR –40°C ≤ TA ≤ +85°C –40°C ≤ TA ≤ +85°C –40°C ≤ TA ≤ +85°C VS = ± 15 V –12.5 V ≤ VCM ≤ +12.5 V –40°C ≤ TA ≤ +85°C, –12.5 V ≤ VCM ≤ +12.5 V RL = 2 kΩ, –12 V ≤ VO ≤ +12 V –40°C ≤ TA ≤ +85°C IL ≤ 20 mA –40°C ≤ TA ≤ +85°C IL = 20 mA IL = 10 mA IL = 10 mA, –40°C ≤ TA ≤ +85°C –40°C ≤ TA ≤ +85°C ± 2.5 V ≤ VS ≤ ±18 V –40°C ≤ TA ≤ +85°C VO = 0 V –40°C ≤ TA ≤ +85°C RL = 10 kΩ, f = 1 kHz, VO = 1 V rms RL = 2 kΩ 50 pF RL = 2 kΩ, f =1 kHz f > 1 kHz f > 1 kHz AVO OUTPUT CHARACTERISTICS Output Voltage, High Output Voltage, Low VOH VOL ISC Output Short Circuit Current Limit POWER SUPPLY Power Supply Rejection Ratio Supply Current/Amplifier DYNAMIC PERFORMANCE Total Harmonic Distortion Slew Rate Gain Bandwidth Product Channel Separation NOISE PERFORMANCE Voltage Noise Spectral Density Current Noise Spectral Density Specifications subject to change without notice. ± 25 ± 17 85 80 –13.5 –14.4 –13.9 ± 75 ± 80 PSRR ISY 2.9 3.0 THD SR GBW CS en in 9 –2– REV. A SSM2275/SSM2475 ELECTRICAL CHARACTERISTICS Parameter INPUT CHARACTERISTICS Offset Voltage Input Bias Current Input Offset Current Input Voltage Range Common-Mode Rejection Ratio AVO OUTPUT CHARACTERISTICS Output Voltage, High Output Voltage, Low VOS IB IOS VIN CMRR (VS = 5 V, TA = 25 C, VCM = 2.5 V unless otherwise noted) Min Typ 1 1 250 300 5 15 0.3 85 80 60 50 4.5 4.8 0.6 0.3 0.7 40 1.7 1.75 0.0006 12 6 128 8 <1 Max 4 6 400 500 75 125 4.7 Units mV mV nA nA nA nA V dB dB V/mV V/mV V V V V V mA mA mA % V/µs MHz dB nV/√Hz pA/√Hz Symbol Conditions –40°C ≤ TA ≤ +85°C –40°C ≤ TA ≤ +85°C –40°C ≤ TA ≤ +85°C +0.8 V ≤ VCM ≤ +2 V –40°C ≤ TA ≤ +85°C RL = 2 kΩ, –0.5 V ≤ VO ≤ +4.5 V –40°C ≤ TA ≤ +85°C IL ≤ –15 mA IL ≤ –10 mA, –40°C ≤ TA ≤ +85°C IL ≤ –15 mA IL ≤ –10 mA IL ≤ –10 mA, –40°C ≤ TA ≤ +85°C –40°C ≤ TA ≤ +85°C VO = 0 V –40°C ≤ TA ≤ +85°C RL = 10 kΩ, f = 1 kHz, VO = 1 V rms RL = 2 kΩ 50 pF RL = 2 kΩ 10 pF RL = 2 kΩ, f =1 kHz f > 1 kHz f > 1 kHz 25 20 4.2 4.5 VOH VOL ISC ISY 1.0 0.5 1.1 Output Short Circuit Current Limit POWER SUPPLY Supply Current/Amplifier DYNAMIC PERFORMANCE Total Harmonic Distortion Slew Rate Gain Bandwidth Product Channel Separation NOISE PERFORMANCE Voltage Noise Spectral Density Current Noise Spectral Density Specifications subject to change without notice. 2.9 3.0 THD SR GBW CS en in REV. A –3– SSM2275/SSM2475 Supply Voltage (VS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 18 V Input Voltage (VIN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 15 V Differential Input Voltage2 . . . . . . . . . . . . . . . . . . . . . . . ± 15 V Storage Temperature Range . . . . . . . . . . . . 65°C to 150°C Operating Temperature Range . . . . . . . . . . . 40°C to 85°C Junction Temperature Range . . . . . . . . . . . . 65°C to 150°C Lead Temperature Range (Soldering, 60 sec) . . . . . . . 300°C ESD Susceptibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2,000 V NOTES 1 Stresses above those listed under Absolute Maximum Ratings may cause perma nent damage to the device. This is a stress rating only; the functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 For supplies less than ± 15 V, the input voltage and differential input voltage must be less than ±15 V. ABSOLUTE MAXIMUM RATINGS 1 Package Type 8-Lead Plastic DIP 8-Lead SOIC 8-Lead microSOIC 14-Lead SOIC 14-Lead TSSOP JA* JC Units °C/W °C/W °C/W °C/W °C/W 103 158 206 120 180 43 43 43 36 35 *θ JA is specified for the worst case conditions, i.e., for device in socket for DIP packages and soldered onto a circuit board for surface mount packages. ORDERING GUIDE Model SSM2275P SSM2275S SSM2275RM SSM2475S SSM2475RU Temperature Range –40°C to +85°C –40°C to +85°C –40°C to +85°C –40°C to +85°C –40°C to +85°C Package Description 8-Lead PDIP 8-Lead SOIC 8-Lead microSOIC 14-Lead SOIC 14-Lead TSSOP Package Options N-8 SO-8 RM-8 R-14 RU-14 CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the SSM2275/SSM2475 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. WARNING! ESD SENSITIVE DEVICE 100 VS = 2.5V RL = 2k CL = 10pF 225 100 80 60 PHASE – Degrees GAIN – dB VS = 2.5V RL = 600 CL = 10pF 225 180 135 PHASE – Degrees 80 60 GAIN – dB 40 180 135 90 40 20 0 90 45 0 20 0 –20 –40 10 45 0 –45 –90 10M 40M –20 –40 10 –45 –90 10M 40M 100 1k 10k 100k FREQUENCY – Hz 1M 100 1k 10k 100k FREQUENCY – Hz 1M Figure 1. Phase/Gain vs. Frequency Figure 2. Phase/Gain vs. Frequency –4– REV. A Typical Characteristics–SSM2275/SSM2475 100 80 60 GAIN – dB VS = 15V RL = 2k CL = 10pF 225 180 135 PHASE – Degrees VOLTAGE NOISE DENSITY – nV/ Hz 60 VS = TA = 50 15V 25 C 40 40 20 0 90 45 0 30 20 –20 –40 10 –45 –90 10M 40M 10 100 1k 10k 100k FREQUENCY – Hz 1M 0 10 100 1k FREQUENCY – Hz 10k 100k Figure 3. Phase/Gain vs. Frequency Figure 6. SSM2275 Voltage Noise Density (Typical) 100 80 60 GAIN – dB VS = 15V RL = 600 CL = 10pF 225 180 135 PHASE – Degrees 140 120 100 VS = TA = 15V 25 C 40 20 0 COMMON MODE REJECTION – dB 90 45 0 80 60 40 –20 –40 10 –45 –90 10M 40M 20 0 100 100 1k 10k 100k FREQUENCY – Hz 1M 1k 10k 1M FREQUENCY – Hz 10M 30M Figure 4. Phase/Gain vs. Frequency Figure 7. Common-Mode Rejection vs. Frequency 2.0 1.8 CURRENT NO




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