BV(dss): 600V / R(ds): 0.8Ohm / I(d): 10A / advanced power MOSFET

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Low RDS(ON) : 0.646 Ω (Typ.) SSH10N60A BVDSS = 600 V RDS(on) = 0.8 Ω ID = 10 A TO-3P 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 oC ) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25oC ) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 “ from case for 5-seconds 1 O o Value 600 10 6.3 40 + 30 _ 545 10 19.3 3.0 193 1.54 - 55 to +150 Units V A A V mJ A mJ V/ns W W/ oC O 1 O 1 O 3 O 2 o C 300 Thermal Resistance Symbol R R θJC θCS Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.24 -- Max. 0.65 -40 Units o C /W R θJA Rev. B ©1999 Fairchild Semiconductor Corporation SSH10N60A Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain( “Miller “) Charge Min. Typ. Max. Units 600 -2.0 -----------------0.66 ------8.5 190 78 20 23 85 30 74 12 35.4 --4.0 100 -100 25 250 0.8 -220 90 50 55 180 70 95 --nC ns µA Ω Ω pF V V nA N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25oC unless otherwise specified) Test Condition VGS=0V,ID=250µ A See Fig 7 VDS=5V,ID=250 µA VGS=30V VGS=-30V VDS=600V VDS=480V,TC=125 C VGS=10V,ID=5A VDS=50V,ID=5A 4 O 4 O o V/ oC ID=250 µ A 1750 2270 VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=300V,ID=10A, RG=6.2 Ω See Fig 13 VDS=480V,VGS=10V, ID=10A See Fig 6 & Fig 12 4 5 OO 4 5 OO Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge 1 O Min. Typ. Max. Units --------440 4.7 10 40 1.4 --A V ns µC Test Condition Integral reverse pn-diode in the MOSFET TJ=25oC,IS=10A,VGS=0V TJ=25oC,IF=10A diF/dt=100A/µ s 4 O O 4 Notes ; 1 O Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature 2 O L=10mH, I AS=10A, VDD=50V, RG=27Ω, Starting T J =25ooC _ _ _ 3 O ISD <10A, di/dt <150A/ µs, VDD