(SSA33L / SSA34) High-Current Density Surface Mount Schottky Rectifier



Part  Number SSA34
Manufacturer Vishay Siliconix
Semiconductor DataSheet

DataSheet View

SSA33L and SSA34 New Product Vishay Semiconductors formerly General Semiconductor High-Current Density Surface Mount Schottky Rectifier DO-214AC (SMA) Cathode Band Reverse Voltage 30 & 40V Forward Current 3.0A 0.065 (1.65) 0.049 (1.25) 0.110 (2.79) 0.100 (2.54) Mounting Pad Layout 0.066 MIN. (1.68 MIN.) 0.074 MAX. (1.88 MAX.) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 MIN. (1.52 MIN.) 0.208 (5.28) REF 0.090 (2.29) 0.078 (1.98) Dimensions in inches and (millimeters) 0.130 (3.30) 0.106 (2.70) 0.008 (0.2) 0 (0) 0.208 (5.28) 0.194 (4.93) 0.060 (1.52) 0.030 (0.76) Features • • • • Mechanical Data Case: JEDEC DO-214AC molded plastic body Terminals: Solder plated, solderable per MIL-STD750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Polarity: Color band denotes cathode end Weight: 0.002 ounce, 0.064 gram A Low power loss, high efficiency Low profile surface mount package Built-in strain relief For use in low voltage high frequency inverters, free wheeling, and polarity protection applications • Guardring for overvoltage protection • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Maximum Ratings and Thermal Characteristics (T Parameter Device marking code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL (See Fig. 1) Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Typical thermal resistance (2) Voltage rate of change (rated VR) Operating junction temperature range Storage temperature range VRRM VRMS VDC IF(AV) IFSM RΘJA RΘJL dv/dt TJ TSTG (TA = 25°C unless otherwise noted) = 25°C unless otherwise noted) Symbol SSA33L 33L 30 21 30 3.0 75 110 28 10,000 -65 to +150 -65 to +150 SSA34 S34 40 28 40 Unit V V V V A A °C/W V/µs °C °C Electrical Characteristics Parameter Maximum instantaneous forward voltage at 3.0A(1) Maximum DC reverse current at rated DC blocking voltage (1) Symbol TJ=25°C TJ=125°C TJ=25°C TJ=125°C VF IR Typ. 0.43 0.34 – 20 Max. 0.45 0.38 0.5 35 Typ. 0.46 0.38 – 17 Max. 0.49 0.42 0.2 30 Unit V mA Notes: (1) Pulse test: 300µs pulse width, 1% duty cycle (2) Aluminum substrate mounted Document Number 88883 16-Jun-04 www.vishay.com 1 SSA33L and SSA34 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Fig. 1 – Forward Current Derating Curve 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 25 50 75 100 125 150 SSA33L SSA34 80 Fig. 2 – Maximum Non-Repetitive Peak Forward Surge Current Peak Forward Surge Current (A) Average Forward Current (A) 60 40 20 0 1 10 100 Lead Temperature (°C) Number of Cycles at 60 HZ Fig. 3 – Typical Instantaneous Forward Characteristics 100 100 Fig. 4 – Typical Reverse Characteristics Instantaneous Reverse Current (mA) TJ = 150°C 10 TJ = 125°C 1 Instantaneous Forward Current (A) 10 TJ = 150°C 1 TJ = 25°C 0.1 SSA33L SSA34 TJ = 25°C 0.1 SSA33L SSA34 0.6 0.8 1.0 0.01 TJ = 125°C 0.01 0 0.2 0.4 0.001 0 20 40 60 80 100 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 5 – Typical Junction Capacitance 1000 TJ = 25°C f = 1.0 MHZ Vsig = 50mVp-p pF - Junction Capacitance 100 10 1 SSA33L SSA34 10 100 Reverse Voltage (V) www.vishay.com 2 Document Number 88883 16-Jun-04 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.




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