SIPMOS-R POWER TRANSISTOR

SPD 08N05L SIPMOS® Power Transistor Features • N channel • Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 55 0.1 8.4 V Ω A Enhancement mode Level • Avalanche rated www.DataSheet4U.com • Logic • dv/dt rated • 175˚C operating temperature Type SPD08N05L SPU08N05L Package P-TO252 P-TO251 Ordering Code Q67040-S4134 Packaging Tape and Reel Pin 1 G Pin 2 D Pin 3 S Q67040-S4182-A2 Tube MaximumRatings , at Tj = 25 ˚C, unless otherwise specified Symbol Parameter Continuous drain current Value 8.4 5.9 34 35 2.4 6 Unit A ID TC = 25 ˚C TC = 100 ˚C Pulsed drain current IDpulse EAS EAR dv/dt TC = 25 ˚C Avalanche energy, single pulse mJ ID = 8.4 A, VDD = 25 V, RGS = 25 Ω Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt kV/µs IS = 8.4 A, VDS = 40 V, di/dt = 200 A/µs, Tjmax = 175 ˚C Gate source voltage Power dissipation VGS Ptot Tj , Tstg ±20 24 -55... +175 55/175/56 V W ˚C TC = 25 ˚C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Data Sheet 1 06.99 SPD 08N05L Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case www.DataSheet4U.com Symbol min. Values typ. max. 6.25 100 75 50 Unit RthJC RthJA RthJA - K/W Thermal resistance, junction - ambient, leded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area1) Electrical Characteristics, at T j = 25 ˚C, unless otherwise specified Parameter Symbol Values min. Static Characteristics Drain- source breakdown voltage typ. 1.6 max. 2 Unit V(BR)DSS VGS(th) IDSS 55 1.2 V VGS = 0 V, ID = 0.25 mA Gate threshold voltage, VGS = VDS ID = 10 µA Zero gate voltage drain current µA 0.1 10 1 100 100 nA Ω 0.125 0.08 0.15 0.1 VDS = 50 V, VGS = 0 V, Tj = 25 ˚C VDS = 50 V, VGS = 0 V, Tj = 150 ˚C Gate-source leakage current IGSS RDS(on) VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 4.5 V, I D = 5.9 A VGS = 10 V, ID = 5.9 A 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. Data Sheet 2 06.99 SPD 08N05L Electrical Characteristics, at T j = 25 ˚C, unless otherwise specified Symbol Values Parameter min. Dynamic Characteristics Transconductance DS www.DataSheet4U.com Unit max. 315 100 56 30 ns S pF typ. 6.2 250 80 45 20 g fs Ciss Coss Crss td(on) 3 - V ≥2*ID*RDS(on)max , ID = 5.9 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time VDD = 30 V, VGS = 4.5 V, ID = 8.4 A, RG = 25 Ω Rise time tr - 40 60 VDD = 30 V, VGS = 4.5 V, ID = 8.4 A, RG = 25 Ω Turn-off delay time td(off) - 25 40 VDD = 30 V, VGS = 4.5 V, ID = 8.4 A, RG = 25 Ω Fall time tf - 20 30 VDD = 30 V, VGS = 4.5 V, ID = 8.4 A, RG = 25 Ω Data Sheet 3 06.99 SPD 08N05L Electrical Characteristics, at T j = 25 ˚C, unless otherwise specified Parameter Dynamic Characteristics Gate to source charge www.DataSheet4U.com Symbol min. Values typ. 1 3.5 9 4 max. 1.5 5.4 14 - Unit Qgs Qgd Qg V(plateau) - nC VDD = 40 V, ID = 8.4 A Gate to drain charge VDD = 40 V, ID = 8.4 A Gate charge total VDD = 40 V, ID = 8.4 A, VGS = 0 to 10 V Gate plateau voltage V VDD = 40 V, ID = 8.4 A Reverse Diode Inverse diode continuous forward current IS I SM VSD t rr Q rr - 1.05 50 0.085 8.4 34 1.8 75 0.13 A TC = 25 ˚C Inverse diode direct current,pulsed TC = 25 ˚C Inverse diode forward voltage V ns µC VGS = 0 V, I F = 16.8 A Reverse recovery time VR = 30 V, IF=IS , diF/dt = 100 A/µs Reverse recovery charge VR = 30 V, IF=l S , diF/dt = 100 A/µs Data Sheet 4 06.99 SPD 08N05L Power Dissipation Drain current Ptot = f (TC) SPD08N05L ID = f (TC ) parameter: VGS ≥ 10 V SPD08N05L 26 W 10 A 22 www.DataSheet4U.com 20 18 8 7 Ptot ID 100 120 140 160 ˚C 190 16 14 6 5 12 10 8 6 4 2 0 0 20 40 60 80 1 0 0 4 3 2 20 40 60 80 100 120 140 160 ˚C 190 TC TC Safe operating area Transient thermal impedance I D = f (V DS) parameter : D = 0 , T C = 25 ˚C 10 2 SPD08N05L ZthJC = f (tp ) parameter : D = tp /T 10 1 SPD08N05L A tp = 2.7µs K/W 10 0 ) = on 100 µs Z thJC 10 -1 D = 0.50 0.20 ID 10 0 R DS ( V DS /I 10 1 10 µs D 1 ms 0.10 10 -2 single pulse 0.05 0.02 0.01 10 ms DC 10 -1 -1 10 10 0 10 1 V 10 2 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS tp Data Sheet 5 06.99 SPD 08N05L Typ. output characteristics I D = f (VDS) parameter: tp = 80 µs SPD08N05L Typ. drain-source-on-resistance RDS(on) = f (ID) parameter: V GS SPD08N05L 20 A Ptot = 24W lk ij h g VGS [V] a 2.5 b 3.0 0.50 Ω 0.40 b c d e f www.DataSheet4U.com 16 14 RDS(on) fc d e 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 8.0 10.0 0.35 0.30 0.25 0.20 0.15 g ID 12 e f g h 10 8 6 4 2 a c i dj k l 0.10 b ki h j l 0.05 V VGS [V] = b 3.0 c 3.5 d 4.0 e f 4.5 5.0 g 5.5 h i 6.0 6.5 j 7.0 k l 8.0 10.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 VDS 0.00 0 2 4 6 8 10 12 A 16 ID Typ. transfer characteristics I D= f (VGS) parameter: tp = 80 µs VDS ≥ 2 x I D x RDS(on)max 25 Typ. forward transconductance gfs = f(ID ); Tj = 25˚C parameter: gfs 8 A S 15 gfs 4 2 V ID 10 5 0 0 1 2 3 4 5 6 8 0 0 2 4 6 8 10 A 14 VGS ID Data Sheet 6 06.99 SPD 08N05L Drain-source on-resistance Gate threshold voltage RDS(on) = f (Tj) parameter : ID = 5.9 A, VGS = 4.5 V SPD08N05L VGS(th) = f (Tj) parameter : VGS = V DS, ID = 10 µA 3.0 V 0.55 Ω www.DataSheet4U.com 0.45 2.4 RDS(on) 0.40 0.35 0.30 0.25 VGS(th) 98% typ 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 typ max 0.20 0.15 0.10 0.05 0.00 -60 -20 20 0.4 0.2 0.0 -60 60 100 140 ˚C min -20 20 60 100 140 ˚C 200 200 Tj Tj Typ. capacitances Forward characteristics of reverse diode C = f (VDS) parameter: V GS = 0 V, f = 1 MHz 10 3 IF = f (VSD ) parameter: Tj , tp = 80 µs 10 2 SPD08N05L A pF C iss C 10 1 10 2 C oss 10 0 Crss IF Tj = 25 ˚C typ Tj = 175 ˚C typ Tj = 25 ˚C (98%) Tj = 175 ˚C (98%) 10 1 0 5 10 15 20 25 30 V 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VDS VSD Data Sheet 7 06.99 SPD 08N05L Avalanche Energy EAS = f (Tj) parameter: ID = 8.4 A, VDD = 25 V RGS = 25 Ω 40 mJ Typ. gate charge VGS = f (QGate ) parameter: ID puls = 8.4 A SPD08N05L 16 V www.DataSheet4U.com 30 12 25 VGS EAS 10 20 8 0,2 VDS max 0,8 VDS max 15 6 10 4 5 2 0 20 40 60 80 100 120 140 ˚C 180 0 0 2 4 6 8 10 Tj 14 nC Q Gate Drain-source breakdown voltage V(BR)DSS = f (Tj) SPD08N05L 66 V 64 V(BR)DSS 62 60 58 56 54 52 50 -60 -20 20 60 100 140 ˚C 200 Tj Data Sheet 8 06.99