Three-Phase MOSFET BRIDGE

SENSITRON SEMICONDUCTOR TECHNICAL DATA Datasheet 4982, Rev. – SPM6M020-060D Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation, 600 VOLT, 20 AMP ELECTRICAL CHARACTERISTICS PER IGBT DEVICE (Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MIN TYP MAX UNIT PARAMETER MOSFET SPECIFICATIONS Drain to Source Breakdown Voltage IC = 250 µA, VGS = 0V Continuous Drain Current Pulsed Drain Current, 1mS Gate to Source Voltage www.DataSheet4U.com BVCSS TC = 25 OC TC = 90 C IDM VGS IGSS V GS(TH) ICSS O 600 - 20 10 40 V A A V nA V ID - - +/-20 +/- 100 Gate-Source Leakage Current , VGS = +/-20V Gate Threshold Voltage, IC=1mA Zero Gate Voltage Drain Current VCS = 600 V, VGE=0V Ti=25oC VCS= 480 V, VGE=0V Ti=125oC On-State Resistance, TC = 25 C TC = 150 C ID = 10A, VCC = 15V, Input Capacitance Output Capacitance Reverse Transfer Cap. VCS = 25 V, VGE = 0 V, f = 1 MHz O O 2.0 - 4.0 250 500 RDSon 0.19 0.43 Ciss Coss Cres 2400 780 50 0.20 µA µA V pF Over-Temperature Shutdown Over-Temperature Shutdown Over-Temperature Output Temperature Sensor Output DC Offset Accuracy, at temperature range from 0 C to 125 C Over-Temperature Shutdown Hysteresis o o Tsd Tso 100 107 10 +0.0 +/-1.0 20 115 o C mV/oC mV +/-2.0 o o C C • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - sales@sensitron.com • Page 1 of 13 SENSITRON TECHNICAL DATA Datasheet 4982, Rev. – Gate Driver , - 40OC