Three-Phase IGBT BRIDGE

SENSITRON SEMICONDUCTOR TECHNICAL DATA SPM6G140-060D Data Sheet 4977 Rev. - Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 140 AMP, THREE PHASE IGBT BRIDGE ELECTRICAL CHARACTERISTICS PER IGBT DEVICE (Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MIN TYP MAX UNIT PARAMETER IGBT SPECIFICATIONS Collector to Emitter Breakdown Voltage IC = 2mA, VGE = 0V Continuous Collector Current Pulsed Collector Current, 10mS Zero Gate Voltage Collector Current (For the module) VCE = 600 V, VGE=0V Ti=25oC VCE = 480 V, VGE=0V Ti=125oC www.DataSheet4U.com BVCES TC = 25 OC TC = 80 C ICM ICES O 600 - - 140 140 200 V A A IC 2 15 TC = 25 OC TC = 125 C O mA mA V Collector to Emitter Saturation Voltage, IC = 90A, VGE = 15V, IGBT Internal Turn On Gate Resistance IGBT Internal Turn Off Gate Resistance VCE(SAT) - 1.5 1.8 8.2 6.2 100 TBD 1.8 Ohm Ohm Ohm usec 20 0.22 V/usec o IGBT Internal Soft Shutdown Turn Off Gate Resistance Short Circuit Time, Conditions TBD DC Bus Voltage Rate of Rise With 15V Supply Removed, dv/dt Junction To Case Thermal Resistance RθJC - - C/W MODULE TOTAL WEIGHT Estimated Total Weight 13 OZ • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - sales@sensitron.com • 1 SPM6G140-060D SENSITRON TECHNICAL DATA Data Sheet 4977 Rev. Brake IGBT SPECIFICATIONS Continuous Collector Current (Limited by Terminals) Pulsed Collector Current, 0.5mS IGBT Internal Gate Resistance IGBT Internal Gate Shunt Resistance Junction To Case Thermal Resistance RθJC TC = 25 OC TC = 90 C ICM 10 10 0.28 o O IC - - 80 80 250 A A Ohm K Ohm C/W ULTRAFAST DIODES RATING AND CHARACTERISTICS Diode Peak Inverse Voltage Continuous Forward Current, TC = 90 C Forward Surge Current, tp = 10 msec Diode Forward Voltage, IF = 90A O PIV IF IFSM VF trr RθJC 600 - 1.4 150 - 140 400 1.6 200 0.35 V A A V nsec o Diode Reverse Recovery Time (IF=90A, VRR=300V , di/dt < 1500 A/µs) Maximum Thermal Resistance C/W MODULE STORAGE AND OPERATING CONDITIONS Maximum operating Junction Temperature Maximum Storage Temperature Operating Altitude Tjmax Tjmax -40 -55 150 150 50000 o o C C Ft Vibration and shock requirements (1) • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - sales@sensitron.com • 2 SPM6G140-060D SENSITRON TECHNICAL DATA Data Sheet 4977 Rev. - Gate Driver Supply Voltage, limits apply to Vcc, Vcc1, Vcc2, Vcc3 Input On Current Opto-Isolator Logic High Input Threshold Input Reverse Breakdown Voltage Input Forward Voltage @ Iin = 5mA Under Voltage Lockout, limits apply to Vcc, Vcc1, Vcc2, Vcc3 Internal Bootstrap Capacitor Value Desaturation Detection, High Input Threshold Voltage Desaturation Detection, Low Input Threshold Voltage Input-to-Output Turn On Delay Output Turn On Rise Time Input-to-Output Turn Off Delay Output Turn Off Fall Time at VCC=300V, IC=70A, TC = 25 Dead Time Requirement, for Shoot Through Prevention Opto-Isolator Input-to-Output Isolation Voltage, momentary Opto-Isolator Operating Input Common Mode Voltage Opto-Isolator Operating Input Common Mode Transient Immunity, with Iin > 5mA Pin-To-Case Isolation Voltage, DC Voltage (Device will be tested at 3000V for 10 seconds) 2500 toffd tf 500 750 2500 1000 10 tond tr Vcc HIN, LIN Ith BVin VF VCCUV 12 2 5.0 9.5 10 7.0 6.0 1200 100 nsec V V KV/usec V 15 5.0 1.6 1.5 10.0 8.0 7.0 18 8.0 2.0 1.7 11.5 9.0 8.0 800 100 V mA mA V V V uF V V nsec DC Bus Current Sensor (Bi-directional With Absolute Value Output) Shunt Resistor Value Current Amplifier Gain, Referenced to Gnd1 Current Amplifier DC Offset (Zero DC Bus Current) Over-Current Set Point 2.80 0.50 0.025 0 2.90 3.00 mOhm V/A V V • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - sales@sensitron.com • 3 SPM6G140-060D SENSITRON TECHNICAL DATA Data Sheet 4977 Rev. - +5V output, Isolated power supply Referenced to Gnd1 Maximum load current 4.75 5 5.25 30 V mA +5V Input, Isolated power supply Referenced to Gnd2 (2) VDD 4.75 5 5.25 V Base Plate Temperature (2) Base Plate Temperature Sensor Output Gain Referenced to Gnd2 Temperature Sensor Output DC Offset Referenced to Gnd2 Accuracy, at temperature range from - 40 oC to 125 oC Tco 6.25 424 +/-4.0 mV/oC mV o C Phase A, Phase B, and Phase C Current Sensors (Bi-directional Output) (2) Current Amplifier Gain Referenced to Gnd2 Current Amplifier DC Offset (Zero Phase Current) Referenced to Gnd2 Current Amplifier Outputs Isolation To Phase Lines, and to Gnd1 1500V V +/0.015 2.5 V/A V (1) Unit is designed to meet ....Vibration and Shock requirements, Mil-STD-810F shall be used. (514.5 and 516.5 methods respectively). (2) Phase current sensors and base plate temperature sensor are floating sensors referenced to Gnd2. An isolated 5V power supply shall be used to power these sensors. • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - sales@sensitron.com • 4 SPM6G140-060D SENSITRON TECHNICAL DATA Data Sheet 4977 Rev. Pinout Pin # 1 2 3 4 Function Isolated Input for Low-side IGBT of Phase A Return for Input at 1 Isolated Input for High-side IGBT of Phase A Return for Input at 3 Pin # 23 24 25 26 Function TCo Case Temperature Output with a gain of 6.25 mV/oC +5V Input Rtn (Signal Ground, Gnd2) +5V Input ICd DC offset of 2.5V for Differential Output Reading of Output at Pin 27 5 6 Isolated Input for Low -side IGBT of Phase B Return for Input at 5 27 28 ICo, Phase C Current Sensor output IBd DC offset of 2.5V for Differential Output Reading of Output at Pin 29 7 8 9 Isolated Input for High-side IGBT of Phase B Return for Input at 7 Isolated Input for Low-side IGBT of Phase C 29 30,31 32 IBo, Phase B Current Sensor output Brake Terminal. Brake Resistor Shall be Connected Between These Terminals and +VDC Brake IGBT Gate Input Brake IGBT Emitter input is internally connected to DC Bus return 10 11 12 13 14 15 16 17 18 19 20 21 Return for Input at 9 Isolated Input for High-side IGBT of Phase C Return for Input at 11 Flt (3) (3) 33 to 37 38 to 42 43 to 46 47 to 50 51 to 54 55 (4) DC Bus return DC Bus “+VDC” input Phase C output Phase B output Phase A output Rtn For Pin56 Optional 15V for Phase C High Side Gate Driver Rtn For Pin58 Optional 15V for Phase B High Side Gate Driver Rtn For Pin60 Optional 15V for Phase A High Side Gate Driver SD Itrip-Ref Adjustable Reference for over-Current Shutdown Idco Flt Clear Input +5V Output +15V Rtn (Signal Ground, Gnd1) +15V Input IAd DC offset of 2.5V for Differential Output Reading of Output at Pin 22 (3) 56 (4) 57 58 59 60 (4) (4) (4) (4) 22 IAo, Phase A Current Sensor output Case Isolated (3) See Pin Description. (4) Contact Factory for this option to be removed, part number SPM6G140-060D-A. • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - sales@sensitron.com • 5 SPM6G140-060D SENSITRON TECHNICAL DATA Data Sheet 4977 Rev. Package Drawing Figure 2. Mechanical Outlines 6 • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - sales@sensitron.com • SENSITRON TECHNICAL DATA Data Sheet 4977 Rev. - SPM6G140-060D Device Marking Figure 3. Device Pinout and Marking • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - sales@sensitron.com • 7 SENSITRON TECHNICAL DATA Data Sheet 4977 Rev. – SPM6G140-060D Normalized Thermal Impedance Curves for Both IGBTs and Diodes D = 0.50 D = 0.20 D = 0.10 D = 0.05 SINGLE PULSE (THERMAL RESPONSE) Figure 4. Normalized Transient Thermal Impedance, Junction-to-Case (IGBT) D = 0.50 D = 0.20 D = 0.10 D = 0.05 SINGLE PULSE (THERMAL RESPONSE) Figure 5. Normalized Transient Thermal Impedance, Junction-to-Case (Diode) • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - sales@sensitron.com • 8 SENSITRON TECHNICAL DATA Data Sheet 4977 Rev. – SPM6G140-060D Pin Descriptions LinA ( Pin 1 ), is an isolated drive input for Low-side IGBT of Phase A. LinA-R ( Pin 2 ), Return for Input at Pin1. HinA ( Pin 3 ), is an isolated drive input for High-side IGBT of Phase A. HinA-R ( Pin 4 ), Return for Input at Pin3. LinB- ( Pin 5 ), is an isolated drive input for Low-side IGBT of Phase B. LinB-R ( Pin 6 ), Return for Input at Pin5. HinB ( Pin 7 ), is an isolated drive input for High-side IGBT of Phase B. HinB-R ( Pin 8 ), Return for Input at Pin7. LinC ( Pin 9 ), is an isolated drive input for Low-side IGBT of Phase C. LinC-R ( Pin 10 ), Return for Input at Pin9. HinC ( Pin 11 ), is an isolated drive input for High-side IGBT of Phase C. HinC-R ( Pin 12 ), Return for Input at Pin11. Recommended input turn-on current for all six drive signals is 5-8mA. For higher noise immunity the tri-state differential buffer, DS34C87, is recommended as shown in Fig. 6. Note : Connect LinA to non-inverting output for a non-inverting input logic. Connect LinA to inverting output for an inverting input logic. 300-400Ω One Channel of DS34C87 2-5KΩ LinA-R LinA OptoCoupler Input Fig. 6. Input Signal Buffer • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - sales@sensitron.com • 9 SENSITRON TECHNICAL DATA Data Sheet 4977 Rev. - SPM6G140-060D Flt ( Pin 13 ), is a dual function input/output