SIPMOS Power-Transistor

www.DataSheet4U.com Preliminary data SPI10N10 SPP10N10,SPB10N10 SIPMOS Power-Transistor Feature N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated P-TO262-3-1 P-TO263-3-2 Product Summary VDS R DS(on) ID 100 170 10.3 P-TO220-3-1 V A Type SPP10N10 SPB10N10 SPI10N10 Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 Ordering Code Q67042-S4118 Q67042-S4119 Q67042-S4120 Marking 10N10 10N10 10N10 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C TC=100°C Symbol ID Value 10.3 7.8 Unit A Pulsed drain current TC=25°C ID puls EAS dv/dt VGS Ptot Tj , Tstg 41.2 60 6 ±20 50 -55... +175 55/175/56 mJ kV/µs V W °C Avalanche energy, single pulse Reverse diode dv/dt Gate source voltage Power dissipation TC=25°C IS =10.3A, VDS =80V, di/dt=200A/µs, Tjmax=175°C Operating and storage temperature IEC climatic category; DIN IEC 68-1
ID =10.3 A , VDD =25V, RGS =25 Page 1 2002-01-31





m Preliminary data SPI10N10 SPP10N10,SPB10N10 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area F) Symbol min. RthJC RthJA RthJA - Values typ. max. 3 62 62 40 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0V, ID =1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) 100 2.1 Values typ. 3 max. 4 Unit V Gate threshold voltage, VGS = VDS ID = 21 µA Zero gate voltage drain current VDS =100V, VGS=0V, Tj =25°C VDS =100V, VGS=0V, Tj =125°C µA 0.01 1 1 137 1 100 100 170 nA m Gate-source leakage current VGS =20V, VDS =0V VGS =10V, ID =7.8A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2002-01-31
Drain-source on-state resistance Preliminary data SPI10N10 SPP10N10,SPB10N10 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Dynamic Characteristics ID =7.8A Symbol Conditions min. Values typ. 5.8 320 72 43 8.2 46 29 23 max. 426 96 65 12 69 44 35 Unit Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Ciss Coss Crss td(on) tr td(off) tf VGS =0V, VDS=25V, f=1MHz VDD =50V, VGS =10V, Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD =80V, ID =10.3A, VGS =0 to 10V VDD =80V, ID =10.3A V(plateau) VDD =80V, ID=10.3A Reverse Diode Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS =0V, IF =10.3A VR =50V, IF =lS , diF /dt=100A/µs IS ISM TC=25°C Page 3  ID =10.3A, RG=2.2
Transconductance gfs VDS 2*ID*RDS(on)max , 2.6 - S pF ns - 2.3 7.9 14.6 6.4 3 11.9 19.4 - nC V - 0.93 57 134 10.3 41.2 1.25 71 167 A V ns nC 2002-01-31 Preliminary data SPI10N10 SPP10N10,SPB10N10 1 Power dissipation Ptot = f (TC ) 55 SPP10N10 2 Drain current ID = f (TC ) parameter: VGS 10 V 12 SPP10N10 W 45 40 A 10 9 8 Ptot ID 35 30 7 6 25 5 20 15 10 5 0 0 20 40 60 80 100 120 140 160 °C 190 4 3 2 1 0 0 20 40 60 80 100 120 140 160 °C 190 TC 3 Safe operating area ID = f ( VDS ) 4 Transient thermal impedance ZthJC = f (tp ) parameter : D = 0 , TC = 25 °C 10 2 SPP10N10 tp = 4.9µs parameter : D = tp /T 10 1 SPP10N10 K/W /I D A DS on ) = V 10 µs 10 0 ID R 10 1 Z thJC DS ( 10 -1 100 µs 10 10 0 1 ms -2 10 ms single pulse 10 -3 DC 10 -1 0 10 10 1 10 2 V 10 3 10 -4 -7 10 10 -6 VDS Page 4
TC D = 0.50 0.20 0.10 0.05 0.02 0.01 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 2002-01-31 Preliminary data SPI10N10 SPP10N10,SPB10N10 5 Typ. output characteristic ID = f (VDS ); Tj=25°C 6 Typ. drain-source on resistance RDS(on) = f (ID ) parameter: tp = 80 µs 25 h g parameter: VGS 400 VGS[V]= a= 5 b= 5.5 c= 6 d= 6.5 e= 7 f= 8 g= 9 h= 10 A f RDS(on) 300 ID 15 e 250 g 200 h 10 d 150 c 100 5 b a 0 0 2 4 6 8 10 V 13 VDS 7 Typ. transfer characteristics ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 80 µs 12 8 Typ. forward transconductance gfs = f(ID ); Tj=25°C parameter: gfs 7 A g fs 8 ID 6 3 4 2 2 0 0 1 2 3 4 5 V 7 VGS Page 5
50 0 0 m a b c d e f VGS[V]= a= 5 b= 5.5 c= 6 d= 6.5 e= 7 f= 8 g= 9 h= 10 5 10 15 20 25 A 35 ID
S 5 4 1 0 0 1 2 3 4 5 6 7 8 A 10 ID 2002-01-31 Preliminary data SPI10N10 SPP10N10,SPB10N10 9 Drain-source on-state resistance RDS(on) = f (Tj ) 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter : ID = 7.8 A, VGS = 10 V SPP10N10 parameter: VGS = VDS 4 750 600 RDS(on) 500 450 400 350 300 250 200 150 100 50 0 -60 -20 20 60 100 140 °C VGS(th) 550 11 Typ. capacitances C = f (VDS) parameter: VGS =0V, f=1 MHz 10 3 pF C 10 2 Coss Crss 10 0 Tj = 25 °C typ Tj = 175 °C typ Tj = 25 °C (98%) Tj = 175 °C (98%) 10 1 0 10 -1 0 IF
V ID =1mA 3 2.5 98% typ 2 m ID =21µA 1.5 -65 200 -35 -5 25 55 85 115 °C 175 Tj Tj 12 Forward character. of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 µs 10 2 SPP10N10 A Ciss 10 1 5 10 15 20 25 30 V 40 0.4 0.8 1.2 1.6 2 2.4 V 3 VDS Page 6 VSD 2002-01-31 Preliminary data SPI10N10 SPP10N10,SPB10N10 13 Typ. avalanche energy EAS = f (Tj ) 60 14 Typ. gate charge VGS = f (QGate ) mJ V 50 45 40 35 30 25 6 20 15 10 2 5 0 25 45 65 85 105 125 145 4 8 12 VGS EAS °C 185 Tj 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) SPP10N10 120 V V (BR)DSS 114 112 110 108 106 104 102 100 98 96 94 92 90 -60 -20 20 60 100 140 °C 200 Tj Page 7  par.: ID = 10.3 A , VDD = 25 V, RGS = 25 parameter: ID = 10.3 A pulsed 16 SPP10N10 0,2 VDS max 10 0,8 VDS max 0 0 4 8 12 16 nC 24 QGate 2002-01-31 Preliminary data SPI10N10 SPP10N10,SPB10N10 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2002-01-31