Medium Power Active Bias InGaP/GaAs HBT Amplifier

Preliminary Product Description The SPB-3018 is high-efficiency InGaP/GaAs Heterojuction Bipolar Transistor (HBT) amplifier RFIC. This amplifier incorporates an on-chip Class AB bias circuit which provides excellent efficiency while maintaining good linearity. The on-chip bias also allows the device output power (and current) to drive up towards saturation as the input power increases. The SPB-3018 is an ideal choice for multi-carrier as well as digital wireless telecom or general wireless applications in the 400-2500 MHz range. This amplifier is a robust, reliable, and rugged part with Class 1C HBM ESD rating, low operating junction temperature (Tj<125 ºC at 85 ºC lead), and excellent moisture resistance (MSL 1). SPB-3018 SPB-3018Z Pb RoHS Compliant & Green Package 800 - 2400 MHz 1W Medium Power Active Bias InGaP/GaAs HBT Amplifier -30 -35 -40 -45 Typical ACP (IS-95) & Efficiency @ 1960MHz ACP 25C Eff. % 25C 22.5 20 17.5 Product Features • • • • • • • Efficiency Available in Lead Free, RoHS compliant, & Green packaging Efficient Class AB operation P1dB = 30 dBm @ 1960MHz High Linearity/ACP performance Robust 1000V ESD, Class 1C MSL 1 moisture rating Power shutdown using VPC (less than 5uA IDQ) 15 12.5 10 7.5 5 2.5 0 15 16 17 18 19 20 21 22 23 24 ACP -50 -55 -60 -65 -70 -75 Applications • W-CDMA, PCS, Cellular Systems • Multi-Carrier Applications Units Frequency Min. Typ. Max. www.DataSheet4U.com Ch. Power Symbol Parameters P1dB Output Power at 1 dB Compression * dBm 880 MHz 1960 MHz 2140 MHz 880 MHz 1960 MHz 2140 MHz 880 MHz 1960 MHz 2140 MHz 12 30 30 30 18 13.5 13 1.3:1 1.2:1 1.3:1 21.5 22 21 5 4 4 4.75 180 5 220 30 5.25 260 15 S21 Small Signal Gain dBm S11 Input VSWR Channel Power ACP IS-95 at 880/1960MHz, -55dBc ACP WCDMA at 2140MHz, -50dBc ACP dBm 880 MHz 1960 MHz 2140 MHz 880 MHz 1960 MHz 2140 MHz NF VD IDQ RTH, j-l Test Conditions: Noise Figure Device Operating Voltage Device Quiescent Current Thermal Resistance (junction - lead) Ta = 25°C ZO = 50 Ohms dB V mA °C/W *Device operating current at P1dB ramps up to approximately 420mA @880MHz, 410mA @1960MHz and 370mA @2140MHz The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved. 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-103980 Rev A Preliminary SPB-3018 800-2400 MHz Cascadable MMIC Amplifier 880 MHz Application Circuit Data, Vcc=5V, ID=210mA P1dB vs. Frequency 34 32 30 28 26 24 0.85 -20 -30 -40 IM3 vs. Tone Power IM3L -40C IM3L 25C IM3L 85C IM3 (dBc) 0.9 0.91 dBm -50 -60 -70 -80 P1dB -40C P1dB 25C P1dB 85C 0.86 0.87 0.88 0.89 4 6 8 10 12 14 16 18 20 22 24 26 GHz Pout (dBm) Gain vs. Frequency 22 0 Input/Output Return Loss, Isolation vs. Frequency, T=25C 20 18 dB dB -5 -10 -15 -20 -25 -30 0.8 0.85 0.9 0.95 1 16 S21_25C S11 S12 S22 14 12 0.8 S21_-40C S21_85C 0.85 0.9 Frequency (GHz) 0.95 1 Frequency (GHz) ACP vs. Ch. Power(IS-95 9 Ch. Fwd.) -35 -40 -45 -50 -55 -60 -65 -70 -75 -80 15 16 17 18 19 20 21 22 23 ACP -40C ACP 85C ACP 25C Collector Efficiency vs. Ch. Pwr. 18 16 14 12 Eff. % -40C Eff. % 85C Eff. % 25C dBc % 10 8 6 4 2 0 15 16 17 18 19 20 21 22 23 Ch. Pwr (dBm) Ch. Pwr. (dBm) 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-103980 Rev A Preliminary SPB-3018 800-2400 MHz Cascadable MMIC Amplifier 1960 MHz Application Circuit Data, Vcc=5V, ID=210mA 34 32 30 P1dB vs. Frequency -20 -30 -40 IM3_-40C IM3_25C IM3_85C IM3 vs. Tone Power IM3 (dBc) dB -50 -60 -70 -80 28 P1dB -40C 26 24 1.93 P1dB 25C P1dB 85C 1.94 1.95 1.96 1.97 1.98 1.99 6 8 10 12 14 16 18 20 22 24 GHz Pout (dBm) Gain vs. Frequency 17 15 13 dB 0 -5 -10 -15 -20 -25 Input/Output Return Loss, Isolation vs. Frequency, T=25C dB 11 S21_25C 9 7 1.93 S21_-40C S21_85C S11 S12 S22 1.94 1.95 1.96 1.97 1.98 1.99 -30 1.93 1.94 Frequency (GHz) 1.95 1.96 1.97 Frequency (GHz) 1.98 1.99 ACP vs. Ch. Power(IS-95 9 Ch. Fwd.) -30.0 -35.0 -40.0 -45.0 -50.0 ACP -40C ACP 85C ACP 25C Collector Efficiency vs. Ch. Pwr. 18 16 14 12 Eff. % -40C Eff. % 85C Eff. % 25C dBc % 18 19 20 21 22 23 10 8 6 4 2 0 -55.0 -60.0 -65.0 -70.0 -75.0 15 16 17 15 16 17 18 19 20 21 22 23 Ch. Pwr. (dBm) Ch. Pwr. (dBm) 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-103980 Rev A Preliminary SPB-3018 800-2400 MHz Cascadable MMIC Amplifier 2140 MHz Application Circuit Data, Vcc=5V, ID=210mA 34 32 30 P1dB vs. Frequency -20 -30 -40 IM3_-40C IM3_25C IM3_85C IM3 vs. Tone Power IM3 (dBc) dB -50 -60 -70 -80 28 26 24 2.11 P1dB -40C P1dB 25C P1dB 85C 2.12 2.13 2.14 2.15 2.16 2.17 6 8 10 12 14 16 18 20 22 24 GHz Pout (dBm) Gain vs. Frequency 17 15 13 11 9 7 2.11 S21_25C S21_-40C S21_85C 0 -5 -10 -15 -20 -25 2.12 2.13 2.14 2.15 2.16 2.17 -30 2.11 Input/Output Return Loss, Isolation vs. Frequency, T=25C dB S11 S12 S22 dB 2.12 Frequency (GHz) 2.13 2.14 2.15 Frequency (GHz) 2.16 2.17 -35 -40 -45 dBc -50 -55 -60 -65 15 ACP vs. Ch. Power(W-CDMA 64 Ch. Fwd.) 18 16 Collector Efficiency vs. Ch. Pwr. Eff. % -40C Eff. % 85C Eff. % 25C ACP -40C ACP 85C ACP 25C 14 12 % 10 8 6 4 2 0 15 16 17 18 19 Ch. Pwr. (dBm) 20 21 22 23 17 19 Ch. Pw r. (dBm ) 21 23 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-103980 Rev A Preliminary SPB-3018 800-2400 MHz Cascadable MMIC Amplifier Application Schematic for 880 MHz Note: Electrical lengths are determined from the center of a shunt component and a cut on the center trace 4.3ΚΩ 300Ω Ζ=50Ω, 3.9° Ζ=50Ω, 7.5° Ζ=50Ω, 0.6° Ζ=50Ω, 22.2° 3Ω Evaluation Board Layout for 880 MHz Bill of Materials: + C1 15pF 0603 Capacitor C2 5.6pF 0603 Capacitor C3 47pF 0603 Capacitor C4 1000pF 0603 capacitor C5 10uF Tantalum capacitor C6,C7 0.1uF 0603 capacitor C8 5.6pF 0603 capacitor C9 6.8pF 0603 capacitor R1 300Ω 0603 res (5%) R2 4.3KΩ 0603 res (5%) R3 3Ω 0603 res (5%) L1 20nH Coilcraft 0805HQ-20NX Inductor Connectors 2x 142-0751-821 Johnson Comp. Heat sink EEF-101407 PCB ECB-101161 Rev. C 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 5 http://www.sirenza.com EDS-103980 Rev A Preliminary SPB-3018 800-2400 MHz Cascadable MMIC Amplifier Application Schematic for 1960 MHz Note: Electrical lengths are determined from the center of a shunt component and a cut on the center trace 4.3ΚΩ 300Ω Ζ=50Ω, 11.6° Ζ=50Ω, 12.1° Ζ=50Ω, 9° Ζ=50Ω, 13.1° Evaluation Board Layout for 1960 MHz Bill of Materials: C1 15pF 0603 Capacitor C2 2.2pF 0603 Capacitor C3 22pF 0603 Capacitor C4 1000pF 0603 capacitor C5 10uF Tantalum capacitor C6,C7 0.1uF 0603 capacitor C8 2.7pF 0603 capacitor C9,10 2.2pF 0603 capacitor R1 300Ω 0603 res (5%) R2 4.3KΩ 0603 res (5%) R3 1.3kΩ 0603 res (5%) L1 20nH Coilcraft 0805HQ-20NX Inductor Connectors 2x 142-0751-821 Johnson Comp. Heat sink EEF-101407 PCB ECB-101161 Rev. C + 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 6 http://www.sirenza.com EDS-103980 Rev A Preliminary SPB-3018 800-2400 MHz Cascadable MMIC Amplifier Application Schematic for 2140 MHz Note: Electrical lengths are determined from the center of a shunt component and a cut on the center trace 4.3ΚΩ 300Ω Ζ=50Ω, 14.4° Ζ=50Ω, 8° Ζ=50Ω, 10.4° Ζ=50Ω, 13.1° Evaluation Board Layout for 2140 MHz Bill of Materials: C1 15pF 0603 Capacitor C2 1.8pF 0603 Capacitor C3 22pF 0603 Capacitor C4 1000pF 0603 capacitor C5 10uF Tantalum capacitor C6,C7 0.1uF 0603 capacitor C8,C9 2.2pF 0603 capacitor C10 4.7pF 0603 capacitor R1 300Ω 0603 res (5%) R2 4.3KΩ 0603 res (5%) R3 3KΩ 0603 res (5%) L1 20nH Coilcraft 0805HQ-20NX Inductor Connectors 2x 142-0751-821 Johnson Comp. Heat sink EEF-101407 PCB ECB-101161 Rev. C + 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 7 http://www.sirenza.com EDS-103980 Rev A Preliminary SPB-3018 800-2400 MHz Cascadable MMIC Amplifier Pin # Function Description 1 2 3 4 Vbias VPC RF IN N/C Vbias is the bias control pin for the active bias network. Recommended configuration is shown in the Application Schematic. VPC is the bias control pin for the active bias network. RF input pin. This pin requires the use of an external DC blocking capacitor as shown in the Application Schematic. 5,6,7,8 RF output and bias pins. Bias should be supplied to this pin through an external RF choke. RF OUT/ Because DC biasing is present on this pin, a DC blocking capacitor should be used in most BIAS applications (see application schematic). The supply side of the bias network should be well bypassed. An output matching network is necessary for optimum performance. GND Exposed area on the bottom side of the package needs to be soldered to the ground plane of the board for thermal and RF performance. Several vias should be located under the EPAD as shown in the recommended land pattern (page 9). EPAD Simplified Device Schematic Absolute Maximum Ratings Parameter Max Device Current (IDQ) Max Device Voltage (VD) Max. RF Input Power Max. Operating Dissipated Power (quiescent) Max. Junction Temp. (TJ) Operating Temp. Range (TL) Max. Storage Temp. Absolute Limit 400 mA 6V +26 dBm 2.0 W +150